quadrant detector
Abstract: No abstract text available
Text: MIRA4 MIRA4 - Mid-Infrared Array • 4 discrete optical channels in a small TO-5 package • Spectral sensitivity range: 1.0-5.0 µm • 99.5% channel isolation (nominal) Cal Sensors MIRA4 mid-infrared array in a quadrant format includes four, 1mm square lead
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Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
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KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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D-22A thermistor
Abstract: No abstract text available
Text: Indium Arsenide Detectors Judson Technologies LLC 221 Commerce Drive Montgomeryville, PA 18936 USA Tel: 215-368-6900 Fax: 215-362-6107 Visit us on the web. ISO 9001 Certified www.judsontechnologies.com J12 Indium Arsenide Detector Operating Notes 1.0 to 3.8 µm
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J12TE3-66D-R01M
Abstract: 28PF1 J12TE3-66D-R250U J12LD2-R250U thermistor inas CMAMP-TO66-PA5 420081 J12TE4 TAG 8142 J12-18C
Text: Indium Arsenide Detectors ISO 9001 Certified Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, info@lasercomponents.com Great Britain: LASER COMPONENTS UK Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, info@lasercomponents.co.uk
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ic 555 use with metal detector
Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.
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Untitled
Abstract: No abstract text available
Text: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products
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FactoryTalk View SE 6.1 user manual
Abstract: honeywell TDC3000 MANUAL 1756-EN2T honeywell tdc manual honeywell dcs manual 1769sc-IF4IH FactoryTalk View SE manual 1756-CN2R RA56-cATM-BLY90 1794-IF8IH
Text: PlantPAx Process Automation System Selection Guide Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and Maintenance of Solid State Controls publication SGI-1.1 available from your local Rockwell
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RA-DU002,
PROCES-SG001B-EN-P
PROCES-SG001A-EN-P
FactoryTalk View SE 6.1 user manual
honeywell TDC3000 MANUAL
1756-EN2T
honeywell tdc manual
honeywell dcs manual
1769sc-IF4IH
FactoryTalk View SE manual
1756-CN2R
RA56-cATM-BLY90
1794-IF8IH
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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C9750
Abstract: C10990 S11059-78HT S11154-01CT S10604
Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS
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C10988MA
C10627
D-82211
DE128228814
C9750
C10990
S11059-78HT
S11154-01CT
S10604
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htc hd2
Abstract: MSC8113 SC140 HD23 SC8113 HA20
Text: Freescale Semiconductor Data Sheet Document Number: MSC8113 Rev. 0, 5/2008 MSC8113 FC-PBGA–431 20 mm x 20 mm Tri-Core Digital Signal Processor • Three StarCore SC140 DSP extended cores, each with an SC140 DSP core, 224 Kbyte of internal SRAM M1 memory
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MSC8113
SC140
htc hd2
MSC8113
HD23
SC8113
HA20
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Detectors
Abstract: BP-25 pbse lead selenide BP-15 BP-35
Text: HAMAMATSU CORP n E D • M2STbOT 00D2b01 BP SERIES PbSe Packaged Detectors WAVELENGTH IN M IC R O N S D E S C R IP TIO N : BP series Lead Selenide PbSe detectors are packaged in either TO-5 or TO-8 cans. P/N BP-25 Example PbSe, 2mm sq., TO-5. (see order data)
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BP-25
BP-15
BP-35
Detectors
pbse
lead selenide
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Detectors
Abstract: pbse PbSe sensor
Text: HAMAMATSU CORP i> m 42STbOT Q002bDl 1 • -T~Y/-W BP SERIES PbSe Packaged Detectors WAVELENGTH IN MICRONS D E S C R IP T IO N : BP series Lead Selenide PbSe detectors are packaged in either TO-5 or TO-8 cans. P/N BP-25 Example PbSe, 2mm sq., TO-5. (see order data)
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42STbOT
Q002bDl
BP-25
BP-15
BP-35
Detectors
pbse
PbSe sensor
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gold detector circuit free
Abstract: 5637C 5638C INFRARED INDUSTRIES lead selenide 5963C free gold detectors circuit 5668C 5767C 5657C
Text: 47^14w Qonosw 4 • iri JZij/Jy/ Lead Selenide Detectors .«^Spectral Response 1 .im . ^ 4 £ 6 " . 0 jlm . C ' Longterm Stability^.: ~.p Rugg^,: Compact - iM S Fast:0feiivery, hsw Cost Description Infrared Industries, Inc. Lead Sele nide (PbSe detectors are thin film
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transistor C4159
Abstract: No abstract text available
Text: InGaAs Linear Image Sensors NIR applications 0.9 to 1.7 ¡im/1.2 to 2.6 pm The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel spectroscopy. They incorporate an InGaAs photodiode array chip, a
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G6891,
G6893
P3226-02
P394A,
P3207-04
P791-11
P4115
P3981-01,
K3413-01,
K1713-01,
transistor C4159
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APD InGaAs array
Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Text: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4
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S1226,
S1227
S1336,
S1337
S2386,
S2387
C2719,
C6386
H4741,
H3651,
APD InGaAs array
Photodiodes
Pyroelectric Detectors
Image Sensors
Photodiode apd amplifier VISIBLE
Photodiode Array Detectors
INSB PHOTODIODE
Avalanche cmos detector
H4741
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HgCdTe
Abstract: PbSe Judson J12TE3-66S-R250U J12TE3-66S-R01M detector active area size nep fast light detector Photodiodes Germanium LF356 OP27 OPA111
Text: n Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Tem perature Effects J12 Series detectors are high-quality Indium A rsenide photodiodes for use in the 1 to 3.8 jim w avelength range. The equivalent circuit is a photon generated current source I h w ith parallel
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J12TE3-66S-R250U
J12TE3-66S-R01M
J12TE2-66S
J12TE3-66S
HgCdTe
PbSe Judson
detector active area size nep
fast light detector
Photodiodes Germanium
LF356
OP27
OPA111
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45016m
Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Text: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.
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303Db0S
J12TE2-8B6-R01M
J12TE2-8B6-R02M
J12TE3
J12TE3-66S
J12D-M204-R01M
J12D-M204-R02M
45016m
J12-18C-R250U
J12-18C-R01M
metal detectors circuit
HgCdTe
PbSe Judson
judson PA-100
J12-18C
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lf356 op-amp
Abstract: judson PA-100 thermistor inas
Text: E 6 8 6 JUJSON b =IE D • 3D3Db05 0000225 G ■ JUD T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.
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3D3Db05
J12TE3
lf356 op-amp
judson PA-100
thermistor inas
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dr 25 germanium diode
Abstract: thermistor inas J12-18C
Text: EGa Indium Arsenide Detector Operating Notes 1.0 to 3.8 |im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 jim wavelength range. The equivalent circuit is a photon generated current source I h with parallel
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J12TE3-66S-R250U
J12TE3-66S-R01M
J12TE2-66S
J12TE3-66S
dr 25 germanium diode
thermistor inas
J12-18C
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J12TE4-3CN-R01M
Abstract: J12TE3-66D-R01M HgCdTe J12TE2-66D-R02M J12TE1-37S-R01M J12-18C J12TE3-66D-R250U judson PA-9 J12TE3 J12TE2-66D-R01M
Text: J}^EGsG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 ¡am General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon
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J12TE2-66S
J12TE3-66S
J12TE4-3CN-R01M
J12TE3-66D-R01M
HgCdTe
J12TE2-66D-R02M
J12TE1-37S-R01M
J12-18C
J12TE3-66D-R250U
judson PA-9
J12TE3
J12TE2-66D-R01M
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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J12-18C
Abstract: R/Detector/"detectors ic"/"CD"/iRAM*10up60a OP2750 J12-5A PbSe Judson thermistor inas R/Detector/"detectors ic"/"CD"/4a2d
Text: A EGæG JUDSON Indium Arsenide Detector Operating Notes 1.0 to 3.8 im General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.8 |am wavelength range. The equivalent circuit is a photon
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J12TE2-66S
J12TE3-66S
30b05
J12-18C
R/Detector/"detectors ic"/"CD"/iRAM*10up60a
OP2750
J12-5A
PbSe Judson
thermistor inas
R/Detector/"detectors ic"/"CD"/4a2d
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