Untitled
Abstract: No abstract text available
Text: ＴＨＹＲＩＳＴＯＲ •回路図 200Ａ Ａvg 1600 Ｖolts CIRCUIT ■外形寸法図 PDT20016 PDH20016 PCH20016 PAT20016 PAH20016 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピークオフ電圧
|
Original
|
PDF
|
PDT20016
PDH20016
PCH20016
PAT20016
PAH20016
300mAï
|
PAT20016
Abstract: No abstract text available
Text: THYRISTOR MODULE PAT20012 PAT20016 200A / 1200V to 1600V PAH20012 PAH20016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PAT TYPICAL APPLICATIONS
|
Original
|
PDF
|
PAT20012
PAT20016
PAH20012
PAH20016
E187184
PAT/PAH20012
PAT/PAH20016
300mA,
PAT/PAH2001x
|
PAH20012
Abstract: PAH20016 PAT20012 PAT20016
Text: THYRISTOR MODULE PAT20012 PAT20016 200A / 1200V to 1600V PAH20012 PAH20016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING PAT TYPICAL APPLICATIONS
|
Original
|
PDF
|
PAT20012
PAT20016
PAH20012
PAH20016
E187184
PAT/PAH20012
PAT/PAH20016
300mA,
PAT/PAH2001x
PAH20016
PAT20016
|
PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: THYRISTOR 200A Avg 1200~1600 Volts •回路図 CIRCUIT K2 G2 PDT PDH PCH20012 PAT PAH ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PDT 1 PDT PDH PCH20016 PAT PAH 2 3 4 K1 G1 PDH 1 2 3 4 K1 G1 PCH 1 2 3 4 K1 G1 K2 G2 PAT 1 2 3 4 K1 G1
|
Original
|
PDF
|
PCH20012
PCH20016
125VDM
125VRM
25ITM
300mAdiG/dt
125VD
125ITM
|
508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|
PCH20012
Abstract: PCH20016
Text: THYRISTOR 200A Avg 1200~1600 Volts •回路図 CIRCUIT K2 G2 PDT PDH PCH20012 PAT PAH ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PDT 1 PDT PDH PCH20016 PAT PAH 2 3 4 K1 G1 PDH 1 2 3 4 K1 G1 PCH 1 2 3 4 K1 G1 K2 G2 PAT 1 2 3 4 K1 G1
|
Original
|
PDF
|
PCH20012
PCH20016
PDT/PDH/PCH/PAT/PAH20012
PDT/PDH/PCH/PAT/PAH20016
125ITM
300mAdiG/dt
PCH20012
PCH20016
|
PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
|
Original
|
PDF
|
C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
|
FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
|
Original
|
PDF
|
|
