NE23383B
Abstract: x-band microwave fet ms 7616
Text: SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B SPACE QUALIFIED OUTLINE DIMENSIONS (Units in mm) FEATURES • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz PACKAGE OUTLINE 83B 1.88 ± 0.3 • HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz
|
Original
|
NE23383B
NE23383B
24-Hour
x-band microwave fet
ms 7616
|
PDF
|
BDW83D
Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
Text: SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching
|
Original
|
BDW83/83A/83B/83C/83D
BDW84/84A/84B/84C/84D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83C
BDW83
BDW83B
BDW83A
BDW84
|
PDF
|
BDW84C
Abstract: BDW84 BDW84B BDW84A DIODE 84A BDW84D
Text: SavantIC Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching
|
Original
|
BDW84/84A/84B/84C/84D
BDW83/83A/83B/83C/83D
BDW84
BDW84A
BDW84B
BDW84C
BDW84C
BDW84
BDW84B
BDW84A
DIODE 84A
BDW84D
|
PDF
|
BDW84
Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
Text: Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching
|
Original
|
BDW84/84A/84B/84C/84D
BDW83/83A/83B/83C/83D
BDW84
BDW84B
BDW84C
BDW84D
BDW84
BDW84D
BDW84A
BDW84C
DIODE 84A
bdw84b
Darlington Transistors
|
PDF
|
BDW83
Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
Text: Inchange Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching
|
Original
|
BDW83/83A/83B/83C/83D
BDW84/84A/84B/84C/84D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83B
BDW83
BDW83C
BDW83D
diode 83C
BDW83A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 83B 2PC4617xMB series SO T8 50 V, 100 mA NPN general-purpose transistors Rev. 1 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
2PC4617xMB
DFN1006B-3
OT883B)
2PC4617QMB
2PC4617RMB
OT883B
2PA1774QMB
2PA1774RMB
AEC-Q101
|
PDF
|
NXP SMD ic MARKING CODE
Abstract: smd code marking ft sot23 marking 41 sot23 nxp
Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
2PA1774xMB
DFN1006B-3
OT883B)
2PA1774QMB
2PA1774RMB
2PA1774SMB
OT883B
2PC4617QMB
NXP SMD ic MARKING CODE
smd code marking ft sot23
marking 41 sot23 nxp
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
2PA1774xMB
DFN1006B-3
OT883B)
2PA1774QMB
OT883B
2PC4617QMB
2PA1774RMB
2PC4617RMB
2PA1774SMB
|
PDF
|
TRANSISTOR SMD MARKING CODE 2x
Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
BC846BMB
DFN1006B-3
OT883B)
AEC-Q101
TRANSISTOR SMD MARKING CODE 2x
NXP SMD TRANSISTOR MARKING CODE
TRANSISTOR SMD MARKING CODE 2x I
TRANSISTOR SMD MARKING CODE t8
marking code BV SMD Transistor
TRANSISTOR SMD MARKING CODE ce
TRANSISTOR SMD MARKING CODE 41
BC846BMB
transistor smd code marking 102
NXP SMD ic MARKING CODE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTA143TMB
DFN1006B-3
OT883B)
PDTC143TMB.
AEC-Q101
|
PDF
|
SMD TRANSISTOR MARKING 2X
Abstract: PDTA143
Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTC143TMB
DFN1006B-3
OT883B)
PDTA143TMB.
AEC-Q101
SMD TRANSISTOR MARKING 2X
PDTA143
|
PDF
|
PDTA123TM
Abstract: PDTC123TMB
Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTA123TMB
DFN1006B-3
OT883B)
PDTC123TMB.
AEC-Q101
PDTA123TM
PDTC123TMB
|
PDF
|
PDTA143
Abstract: No abstract text available
Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTC143TMB
DFN1006B-3
OT883B)
PDTA143TMB.
AEC-Q101
PDTA143
|
PDF
|
marking code BV SMD Transistor
Abstract: No abstract text available
Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTA143TMB
DFN1006B-3
OT883B)
PDTC143TMB.
AEC-Q101
marking code BV SMD Transistor
|
PDF
|
|
PDTC123TMB
Abstract: No abstract text available
Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTC123TMB
DFN1006B-3
OT883B)
PDTA123TMB.
AEC-Q101
PDTC123TMB
|
PDF
|
low power TRANSISTOR SMD
Abstract: TRANSISTOR SMD MARKING CODE PDTA123TM PDTC123TMB
Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTC123TMB
DFN1006B-3
OT883B)
PDTA123TMB.
AEC-Q101
low power TRANSISTOR SMD
TRANSISTOR SMD MARKING CODE
PDTA123TM
PDTC123TMB
|
PDF
|
PDTA143
Abstract: No abstract text available
Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTA143TMB
DFN1006B-3
OT883B)
PDTC143TMB.
AEC-Q101
PDTA143
|
PDF
|
PDTC123TMB
Abstract: No abstract text available
Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
|
Original
|
PDTA123TMB
DFN1006B-3
OT883B)
PDTC123TMB.
AEC-Q101
PDTC123TMB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
|
PDF
|
marking code a02 SMD Transistor
Abstract: MARKING CODE SMD IC A08 A08 smd transistor
Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.
|
Original
|
PMBT3906MB
DFN1006B-3
OT883B)
PMBT3904MB.
AEC-Q101
marking code a02 SMD Transistor
MARKING CODE SMD IC A08
A08 smd transistor
|
PDF
|
MARKING CODE SMD IC
Abstract: No abstract text available
Text: 83B PMBT3904MB SO T8 40 V, 200 mA NPN switching transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.
|
Original
|
PMBT3904MB
OT883B
PMBT3906MB.
AEC-Q101
MARKING CODE SMD IC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz
|
OCR Scan
|
NE23383B
NE23383B
IS2212
IS12I
IS12S21I
|
PDF
|
IC 7458
Abstract: NE23383B low noise FET NEC U
Text: SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: Units in mm PACKAGE OUTLINE 83B NF = 0.35 dB TYP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz • GATE LENGTH = Lg = 0.3 |im
|
OCR Scan
|
NE23383B
NE23383B
24-Hour
IC 7458
low noise FET NEC U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ALS08, SN54AS08, SN74ALS08, SN74AS08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SDAS191A - APRIL 1982 - REVISED DECEMBER 1994 • Package Options Include Plastic Small-Outline D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs
|
OCR Scan
|
SN54ALS08,
SN54AS08,
SN74ALS08,
SN74AS08
SDAS191A
300-mil
SN64ALS08,
SN54AS08
|
PDF
|