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    PACKAGE OUTLINE 83B Search Results

    PACKAGE OUTLINE 83B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE OUTLINE 83B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE23383B

    Abstract: x-band microwave fet ms 7616
    Text: SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B SPACE QUALIFIED OUTLINE DIMENSIONS (Units in mm) FEATURES • SUPER LOW NOISE FIGURE: NF = 0.35 dB TYP at f = 4 GHz PACKAGE OUTLINE 83B 1.88 ± 0.3 • HIGH ASSOCIATED GAIN: GA = 15.0 dB TYP at f = 4 GHz


    Original     		PDF NE23383B NE23383B 24-Hour x-band microwave fet ms 7616

    BDW83D

    Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
    Text: SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching


    Original     		PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83C BDW83 BDW83B BDW83A BDW84

    BDW84C

    Abstract: BDW84 BDW84B BDW84A DIODE 84A BDW84D
    Text: SavantIC Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDW83/83A/83B/83C/83D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching


    Original     		PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84A BDW84B BDW84C BDW84C BDW84 BDW84B BDW84A DIODE 84A BDW84D

    BDW84

    Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
    Text: Inchange Semiconductor Product Specification BDW84/84A/84B/84C/84D Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW83/83A/83B/83C/83D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching


    Original     		PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84B BDW84C BDW84D BDW84 BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors

    BDW83

    Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
    Text: Inchange Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDW84/84A/84B/84C/84D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in power linear and switching


    Original     		PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83B BDW83 BDW83C BDW83D diode 83C BDW83A

    Untitled

    Abstract: No abstract text available
    Text: 83B 2PC4617xMB series SO T8 50 V, 100 mA NPN general-purpose transistors Rev. 1 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PC4617xMB DFN1006B-3 OT883B) 2PC4617QMB 2PC4617RMB OT883B 2PA1774QMB 2PA1774RMB AEC-Q101

    NXP SMD ic MARKING CODE

    Abstract: smd code marking ft sot23 marking 41 sot23 nxp
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB 2PA1774RMB 2PA1774SMB OT883B 2PC4617QMB NXP SMD ic MARKING CODE smd code marking ft sot23 marking 41 sot23 nxp

    Untitled

    Abstract: No abstract text available
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB OT883B 2PC4617QMB 2PA1774RMB 2PC4617RMB 2PA1774SMB

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101

    SMD TRANSISTOR MARKING 2X

    Abstract: PDTA143
    Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 SMD TRANSISTOR MARKING 2X PDTA143

    PDTA123TM

    Abstract: PDTC123TMB
    Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123TMB DFN1006B-3 OT883B) PDTC123TMB. AEC-Q101 PDTA123TM PDTC123TMB

    PDTA143

    Abstract: No abstract text available
    Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 PDTA143

    marking code BV SMD Transistor

    Abstract: No abstract text available
    Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101 marking code BV SMD Transistor

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123TMB DFN1006B-3 OT883B) PDTA123TMB. AEC-Q101 PDTC123TMB

    low power TRANSISTOR SMD

    Abstract: TRANSISTOR SMD MARKING CODE PDTA123TM PDTC123TMB
    Text: 83B PDTC123TMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123TMB DFN1006B-3 OT883B) PDTA123TMB. AEC-Q101 low power TRANSISTOR SMD TRANSISTOR SMD MARKING CODE PDTA123TM PDTC123TMB

    PDTA143

    Abstract: No abstract text available
    Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101 PDTA143

    PDTC123TMB

    Abstract: No abstract text available
    Text: 83B PDTA123TMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = open Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123TMB DFN1006B-3 OT883B) PDTC123TMB. AEC-Q101 PDTC123TMB

    Untitled

    Abstract: No abstract text available
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101

    marking code a02 SMD Transistor

    Abstract: MARKING CODE SMD IC A08 A08 smd transistor
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101 marking code a02 SMD Transistor MARKING CODE SMD IC A08 A08 smd transistor

    MARKING CODE SMD IC

    Abstract: No abstract text available
    Text: 83B PMBT3904MB SO T8 40 V, 200 mA NPN switching transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description NPN single switching transistor in a leadless ultra small SOT883B Surface-Mounted Device SMD plastic package.


    Original     		PDF PMBT3904MB OT883B PMBT3906MB. AEC-Q101 MARKING CODE SMD IC

    Untitled

    Abstract: No abstract text available
    Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz


    OCR Scan     		PDF NE23383B NE23383B IS2212 IS12I IS12S21I

    IC 7458

    Abstract: NE23383B low noise FET NEC U
    Text: SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET NE23383B OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: Units in mm PACKAGE OUTLINE 83B NF = 0.35 dB TYP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz • GATE LENGTH = Lg = 0.3 |im


    OCR Scan     		PDF NE23383B NE23383B 24-Hour IC 7458 low noise FET NEC U

    Untitled

    Abstract: No abstract text available
    Text: SN54ALS08, SN54AS08, SN74ALS08, SN74AS08 QUADRUPLE 2-INPUT POSITIVE-AND GATES SDAS191A - APRIL 1982 - REVISED DECEMBER 1994 • Package Options Include Plastic Small-Outline D Packages, Ceramic Chip Carriers (FK), and Standard Plastic (N) and Ceramic (J) 300-mil DIPs


    OCR Scan     		PDF SN54ALS08, SN54AS08, SN74ALS08, SN74AS08 SDAS191A 300-mil SN64ALS08, SN54AS08