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    PACKAGE MARKING WF 5 Search Results

    PACKAGE MARKING WF 5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ACT825/QKA Rochester Electronics LLC 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP Visit Rochester Electronics LLC Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    PACKAGE MARKING WF 5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4063D AUIRGP4063D-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		AUIRGP4063D AUIRGP4063D-E PDF

    405C

    Abstract: TPS60230 TPS60230RGTR
    Text: TPS60230 www.ti.com SLVS516A – MAY 2004 – REVISED JUNE 2004 WHITE LED CHARGE PUMP CURRENT SOURCE WITH PWM BRIGHTNESS CONTROL FEATURES • • • • • • • • • • • Regulated Output Current With 0.4% Matching Drives up to 5 LEDs at 25 mA Each


    Original     		TPS60230 SLVS516A 405C TPS60230 TPS60230RGTR PDF

    TPS62301DRC

    Abstract: No abstract text available
    Text: QFN-10 TPS62300, TPS62301, TPS62302 TPS62303, TPS62304, TPS62305 TPS62306, TPS62320, TPS62321 CSP-8 www.ti.com SLVS528 – JULY 2004 500-mA, 3-MHz SYNCHRONOUS STEP-DOWN CONVERTER IN CHIP SCALE PACKAGING Up to 93% Efficiency at 3-MHz Operation Up to 500-mA Output Current at VI = 2.7 V


    Original     		QFN-10 TPS62300, TPS62301, TPS62302 TPS62303, TPS62304, TPS62305 TPS62306, TPS62320, TPS62321 TPS62301DRC PDF

    diode 0.2 V 1A

    Abstract: era83
    Text: ERA83-006 1A (60V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class 6 High reliability by planer design Ultra small package, possible for 5mm pitch automatic


    Original     		ERA83-006 diode 0.2 V 1A era83 PDF

    era85 diode

    Abstract: No abstract text available
    Text: ERA85-009 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class 9 High reliability by planer design Ultra small package, possible for 5mm pitch automatic


    Original     		ERA85-009 era85 diode PDF

    era83-004

    Abstract: No abstract text available
    Text: ERA83-004 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class 4 High reliability by planer design Ultra small package, possible for 5mm pitch automatic


    Original     		ERA83-004 500ns, era83-004 PDF

    diode 60v 1a

    Abstract: marking code 1A diode
    Text: ERA83-006 1A (60V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class 6 High reliability by planer design Ultra small package, possible for 5mm pitch automatic


    Original     		ERA83-006 diode 60v 1a marking code 1A diode PDF

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: STL8DN6LF3 Automotive-grade dual N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN6LF3 60 V 30 mΩ 7.8 A • Designed for automotive applications and


    Original     		AEC-Q101 DocID022261 PDF

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89 PDF

    diode 400V 4A

    Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
    Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		7072A IRGB4059DPbF O-220AB diode 400V 4A diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN10LF3 100 V 35 mΩ 7.8 A • Designed for automotive applications and


    Original     		STL8DN10LF3 AEC-Q101 DocID023009 PDF

    diode w8 sod123

    Abstract: BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1
    Text: Surface mount zener diode FEATURES Pb z Planar die construction. 500mW power dissipation on ceramic PCB. General purpose, medium current. z Ideally suited for automated assembly processes. z z BZT52C2V4-BZT52C51 Lead-free APPLICATIONS z Zener diode. z Ultra-small surface mount package.


    Original     		500mW BZT52C2V4-BZT52C51 OD-123 diode w8 sod123 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 PDF

    diode sod-123 marking code 26

    Abstract: Code sod-123 on semiconductor BA782 marking sod wf package marking WF
    Text: BA782 Band Switching Diode PINNING DESCRIPTION PIN Mechanical Data: Case: SOD-123 plastic case 1 Cathode 2 Anode 2 1 WF Top View Marking Code: "WF" Simplified outline SOD-123 and symbol Description: Silicon Epitaxial Planar Diode Switches For electric band switching in radio and TV tuners in the


    Original     		BA782 OD-123 OD-123 diode sod-123 marking code 26 Code sod-123 on semiconductor BA782 marking sod wf package marking WF PDF

    Untitled

    Abstract: No abstract text available
    Text: BZX584Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOD-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOD-523 MECHANICAL DATA • Case: SOD-523 Plastic


    Original     		BZX584Cx OD-523 OD-523 150mW J-STD-020D 2002/95/EC May-2009, KSJR05 25mm2. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		IRGB4059DPbF IRF1010 O-220AB PDF

    pnp array

    Abstract: SEMD10 DSA0037426 DSA003742
    Text: SEMD10 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)


    Original     		SEMD10 OT666 EHA07176 OT666 Feb-26-2004 pnp array SEMD10 DSA0037426 DSA003742 PDF

    Untitled

    Abstract: No abstract text available
    Text: BZT52Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 43 Volts POWER DISSIPATION – 0.5 Watts FEATURES SOD-123 • Planar die construction • 500mW power dissipation rating • Ultra-small surface mount package SOD-123 MECHANICAL DATA • Case: SOD-123 Plastic


    Original     		BZT52Cx OD-123 OD-123 500mW J-STD-020D 2002/95/EC May-2010, KSJR03 25mm2. PDF

    10a 400V ultra fast diode d2pak

    Abstract: IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V
    Text: PD - 96424 IRGS4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • IC = 10A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		IRGS4064DPbF EIA-418. 10a 400V ultra fast diode d2pak IRGS4064DPBF IRGS4064 ultrafast diode 10a 400v igbt 600V PDF

    Zener diode smd marking code WN

    Abstract: marking code Wu SMD zener DIODE SMD w9 Zener diode smd marking wn smd diode code marking w6 zener SMD Wj zener SMD W9 marking code WL SMD zener smd marking wc
    Text: SMD Zener Diodes SMD Diodes Specialist CZRW55C2V4-G Thru CZRW55C43-G Voltage: 2.4 to 43 Volts Power: 500 mWatts RoHS Device Features SOD-123 -Planar die construction. -500mW power dissipation. 0.152 3.85 0.140(3.55) -Ideally suited for automated assembly


    Original     		CZRW55C2V4-G CZRW55C43-G OD-123 -500mW OD-123, MIL-STD202G QW-BZ016 Zener diode smd marking code WN marking code Wu SMD zener DIODE SMD w9 Zener diode smd marking wn smd diode code marking w6 zener SMD Wj zener SMD W9 marking code WL SMD zener smd marking wc PDF

    BZX584C2V4

    Abstract: BZX584C2V7 BZX584C3V0 BZX584C3V3 BZX584C3V9 J-STD-020D PIN DIODE MARKING CODE wk Diode device marking code w4
    Text: BZX584Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOD-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOD-523 MECHANICAL DATA • Case: SOD-523 Plastic


    Original     		BZX584Cx OD-523 150mW OD-523 J-STD-020D 2002/95/EC BZX584C2V4 BZX584C2V7 BZX584C3V0 BZX584C3V3 BZX584C3V9 J-STD-020D PIN DIODE MARKING CODE wk Diode device marking code w4 PDF

    Schottky Diode 40V 6A

    Abstract: No abstract text available
    Text: ERA82-004 0.6A (40V / 0.6A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class Lot No. 4 High reliability by planer design Ultra small package, possible for 5mm pitch automatic


    Original     		ERA82-004 Schottky Diode 40V 6A PDF

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN PDF

    SB07

    Abstract: sb10-05pcp
    Text: SAßYO Small-Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes CS B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.


    OCR Scan     		O-126 T0-126ML SB01-05Q SB01-05CPCA) SB05-05P SB10-05PCP SB20-05P SB01-05SPA SB05-05NP SB20-05T SB07 PDF