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    transistor d 13009

    Abstract: transistor ap 7686 ic 7483 ap 6928
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR PA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA 2.1 ± 0.1 ► 1.25 ± 0.1 - * j Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA832TF NE856, NE685) PA832TF PA832TF-T1 24-Hour transistor d 13009 transistor ap 7686 ic 7483 ap 6928

    ic 5219 8mm

    Abstract: TRANSISTOR 2sC 6090 transistor 2sc 4977 2sc 1364 transistor 2sc 6090 13009 power transistor IC 4017 B ic 4069 pin configuration IC 4069 14 PIN 832t
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The /iP A 832T F has two different built-in transistors (Q1 2 . 10* 0.1 and Q2) for low noise amplification in the VHF band to UHF


    OCR Scan     		PDF

    sem 5025

    Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
    Text: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1


    OCR Scan     		PDF uPA835TF iPA835TF 2SC4959, 2SC4226) sem 5025 ic 4440 for audio amplification pe 5571 NEC 9736