PA507TE Search Results

PA507TE Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA507TE-T1-AT		Renesas Electronics Corporation	P-Channel MOSFET With Schottky Barrier Diode For Switching, TMM, /Embossed Tape

PA507TE Price and Stock

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Rochester Electronics LLC UPA507TE-T1-AT P-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	UPA507TE-T1-AT	Bulk			1,015	1 - 10 - 100 - 1000 - 10000 $0.3	Buy Now
Renesas Electronics Corporation UPA507TE-T1-AT Trans MOSFET P-CH 20V 2A 5-Pin Thin-Type Mini-Mold T/R - Tape and Reel (Alt: UPA507TE-T1-AT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	UPA507TE-T1-AT	Reel		4 Weeks	1,221	1 $0.2987 10 $0.2987 100 $0.2987 1000 $0.2987 10000 $0.2987	Buy Now
Rochester Electronics	UPA507TE-T1-AT		141,000		1	1 $0.2987 10 $0.2987 100 $0.2808 1000 $0.2539 10000 $0.2539	Buy Now

PA507TE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
hz nec Abstract: SC-95 UPA507TE Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven	Original	PDF	PA507TE PA507TE hz nec SC-95 UPA507TE
SC-95 Abstract: No abstract text available Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65 –0.15 0.32 +0.1 –0.05 5 4 1.5 2.8 ±0.2 The µ PA507TE is a switching device, which can be driven	Original	PDF	PA507TE PA507TE SC-95
SC-95 Abstract: PA507TE-T1-A Text: データ・シートショットキバリア・ダイオード内蔵 MOS 形電界効果トランジスタ MOS FET with Schottky Barrier Diode PA507TE ショットキバリア・ダイオード内蔵 P チャネル MOS FET スイッチング用 μ PA507TE は，1.8 V 電源系による直接駆動が可能な	Original	PDF	PA507TE PA507TE PA507TE-T1-A PA507TE-T2-A G16626JJ2V0DS M8E02 SC-95 PA507TE-T1-A
SC-95 Abstract: PA507TE-T1-A Text: DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING Unit: mm The μ PA507TE is a switching device, which can be driven directly 0.32 +0.1 –0.05 0.65 –0.15 DESCRIPTION +0.1	Original	PDF	PA507TE PA507TE SC-95 PA507TE-T1-A
SC-95 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PDF	PA507TE PA507TE G16626JJ2V0DS M8E02 SC-95
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
SC-95 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF