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    PA2373T1P Search Results

    PA2373T1P Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2373T1P-E4-A Renesas Electronics Corporation Nch Dual Power Mosfet 24V 6A 24Mohm 4-Pin Eflip-Lga Visit Renesas Electronics Corporation
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    PA2373T1P Price and Stock

    Renesas Electronics Corporation UPA2373T1P-E4-A

    MOSFET 2N-CH 24V LGA
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    PA2373T1P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA2373T1P R07DS0674EJ0100 Rev.1.00 Feb 10, 2012 MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source. The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for


    Original     		PDF PA2373T1P PA2373T1P R07DS0674EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PA2373T1P Dual Drain common , N-channel MOSFET R07DS0674EJ0101 Rev.1.01 Aug 19, 2013 24V, 6A, 23.0mΩ DESCRIPTION The μPA2373T1P is a switching device, which can be driven directly by a 2.5 V power source. The μPA2373T1P features a low on-state resistance and excellent switching characteristics, and is suitable for


    Original     		PDF PA2373T1P R07DS0674EJ0101 PA2373T1P