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    PA1870BGR Search Results

    PA1870BGR Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    UPA1870BGR-9JG-E1-AT Renesas Electronics Corporation Nch Dual Power Mosfet 20V 6.0A 20.0Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1870BGR-9JG-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 20V 6.0A 20.0Mohm Tssop8 Visit Renesas Electronics Corporation
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    PA1870BGR Price and Stock

    Renesas Electronics Corporation UPA1870BGR-9JG-E1

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    Bristol Electronics UPA1870BGR-9JG-E1 688
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    PA1870BGR Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    PDF PA1870B G16741JJ1V0DS M8E02

    PA1870B

    Abstract: upa1870b PA1870BGR
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1870B N チャネル MOS FET スイッチング用 µPA1870B は,2.5 V 電源系による直接駆動が可能なスイッ 外形図(単位:mm) チング素子です。


    Original
    PDF PA1870B PA1870BGR-9JG G16741JJ1V0DS M8E02 PA1870B upa1870b PA1870BGR

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    upa1870b

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1870B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and


    Original
    PDF PA1870B PA1870B upa1870b