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    P80N Search Results

    P80N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP80N04KHE-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZK, /Embossed Tape Visit Renesas Electronics Corporation
    NP80N03CLE-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP80N055NLE-S18-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25SK, /Tube Visit Renesas Electronics Corporation
    NP80N055CHE-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP80N04PLG-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    P80N Price and Stock

    Texas Instruments LM2937IMP-8.0-NOPB

    IC REG LINEAR 8V 400MA SOT223-4
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    DigiKey LM2937IMP-8.0-NOPB Digi-Reel 7,251 1
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    LM2937IMP-8.0-NOPB Cut Tape 7,251 1
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    LM2937IMP-8.0-NOPB Reel 6,000 1,000
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    Littelfuse Inc IXFP80N25X3

    MOSFET N-CH 250V 80A TO220AB
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    DigiKey IXFP80N25X3 Tube 1,284 1
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    STMicroelectronics STP80NF10FP

    MOSFET N-CH 100V 38A TO220FP
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    STMicroelectronics STP80N240K6

    N-CHANNEL 800 V, 197 MOHM TYP.,
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    STMicroelectronics STP80NF12

    MOSFET N-CH 120V 80A TO220AB
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    DigiKey STP80NF12 Tube 883 1
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    Find more P80N price and stock on Findchips.com

    P80N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P80NF12 STMicroelectronics N-channel 120V - 0.013ohm - 80A - TO-220 STripFET TM II Power MOSFET Original PDF

    P80N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p80n05

    Abstract: No abstract text available
    Text: P80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N05-09 • ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.009 Ω 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP80N05-09 P80N05-09 O-220 p80n05

    P80NE06

    Abstract: p80ne06-10 p80ne0 P80NE p80ne06.10
    Text: P80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P80NE06-10 • ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		PDF STP80NE06-10 P80NE06-10 O-220 P80NE06 p80ne06-10 p80ne0 P80NE p80ne06.10

    p80ne0

    Abstract: P80NE03L-06 P80NE p80ne03 st microelectronics MOSFET 2000 STP80NE03L-06 st microelectronics MOSFET automotive P80NE03L
    Text: P80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP80NE03L-06 P80NE03L-06 O-220 p80ne0 P80NE03L-06 P80NE p80ne03 st microelectronics MOSFET 2000 STP80NE03L-06 st microelectronics MOSFET automotive P80NE03L

    P80NE03L-06

    Abstract: p80ne03 p80ne0 P80NE P80NE03L STP80NE03L-06 st microelectronics MOSFET 2000 p80ne03l06
    Text: P80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST P80NE03L-06 30 V < 0.006 Ω 80 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		PDF STP80NE03L-06 P80NE03L-06 O-220 P80NE03L-06 p80ne03 p80ne0 P80NE P80NE03L STP80NE03L-06 st microelectronics MOSFET 2000 p80ne03l06

    P80N06-10

    Abstract: p80n06 STP80N06-10
    Text: P80N06-10 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P80N06-10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.010 Ω 80 A TYPICAL RDS(on) = 8.5 mΩ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCE TESTED


    Original     		PDF STP80N06-10 P80N06-10 O-220 P80N06-10 p80n06 STP80N06-10

    P80N03

    Abstract: P80N03L-06
    Text: P80N03L-06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID ST P80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP80N03L-06 P80N03L-06 100oC 175oC O-220 P80N03 P80N03L-06

    uPD754202

    Abstract: C10943X
    Text: µPD754202 4-BIT SINGLE-CHIP MICROCONTROLLERS 1996 Document No. U11132EJ2V0UM00 2nd edition Date Published May 1997 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and


    Original     		PDF PD754202 U11132EJ2V0UM00 uPD754202 C10943X

    p80ne0

    Abstract: P80NE P80NE06 STP80NE06-10 STP-80 200NS140
    Text: P80NE06-10 N-CHANNEL 60V - 0.0085 Ω - 80A TO-220 "SINGLE FEATURE SIZE " MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID P80NE06-10 60 V < 0.01 Ω 80 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.0085 Ω ■ EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STP80NE06-10 O-220 p80ne0 P80NE P80NE06 STP80NE06-10 STP-80 200NS140

    p80nf06

    Abstract: B80NF06 max 550 transistor W80NF06 P80NF p80n
    Text: P80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET TYPE STB80NF06 P80NF06 STW80NF06 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V < 0.010 Ω < 0.010 Ω < 0.010 Ω 80 A 80 A 80 A TYPICAL RDS(on) = 0.0065Ω


    Original     		PDF STP80NF06 STB80NF06 STW80NF06 O-220/D2PAK/TO-247 O-220 O-247 p80nf06 B80NF06 max 550 transistor W80NF06 P80NF p80n

    p80nf10

    Abstract: b80nf10 P80NF-10
    Text: P80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 P80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω


    Original     		PDF STP80NF10 STB80NF10 O-220/D2PAK STB80NF10 STP80NF10 p80nf10 b80nf10 P80NF-10

    P80NF10

    Abstract: P80NF b80nf1 b80nf10 P80NF-10
    Text: STB80NF10 P80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) P80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested


    Original     		PDF STB80NF10 STP80NF10 O-220 STP80NF10 STB80NF10 O-220 P80NF10 P80NF b80nf1 b80nf10 P80NF-10

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    btm-220

    Abstract: MKL series diode SKE 1/10 similar ic xa 222 uPD754264 nec Semiconductors Selection Guide U12287E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    BTM-220

    Abstract: uPD754202 uPD75F4264 uPD75F4264A nec 16 bit Microcontroller
    Text: Preliminary User’s Manual mPD75F4264 4-bit Single-chip Microcontrollers mPD75F4264 mPD75F4264A Document No. U12695EJ1V0UM00 1st edition Date Published September 1997 N Printed in Japan 1997 [MEMO] NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


    Original     		PDF mPD75F4264 mPD75F4264A U12695EJ1V0UM00 BTM-220 uPD754202 uPD75F4264 uPD75F4264A nec 16 bit Microcontroller

    Untitled

    Abstract: No abstract text available
    Text: P80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Datasheet - production data Features Type VDSS RDS on max ID P80NF12 120 V < 0.018 Ω 80 A TAB • Exceptional dv/dt capability • 100% avalanche tested 3


    Original     		PDF STP80NF12 O-220 O-220 DocID9204

    p60nf06

    Abstract: P90NF03 P60NF p60nf06l p90nf03l p80nf75 P80NF5 p60nf0 P90NF p40nf10
    Text: AN1624 APPLICATION NOTE STSR3 SIMPLIFIES IMPLEMENTATION OF SYNCHRONOUS RECTIFIER IN FLYBACK CONVERTER F. Librizzi - F. Lentini 1. ABSTRACT This paper describes the functionality and the operation of the STSR3 device used as the secondary synchronous rectifier driver in Flyback topology switched mode power supplies. A Schematic and layout


    Original     		PDF AN1624 100nF p60nf06 P90NF03 P60NF p60nf06l p90nf03l p80nf75 P80NF5 p60nf0 P90NF p40nf10

    P80NF03

    Abstract: P80NF P80NF03L STP80NF03L airbag p80n
    Text: P80NF03L N-CHANNEL 30V - 0.004 Ω - 80A TO-220 STripFET II MOSFET TYPE P80NF03L • ■ ■ ■ VDSS RDS on ID 30 V < 0.0045 Ω 80 A TYPICAL RDS(on) = 0.004 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 1 2 TO-220 DESCRIPTION


    Original     		PDF STP80NF03L O-220 P80NF03 P80NF P80NF03L STP80NF03L airbag p80n

    P80NF5

    Abstract: p80nf55-08 P80NF550 p80nf55 P80NF*55-08 P80NF b80nf55-08 b80nf55 P80NF5508 p80n
    Text: P80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET Table 1: General Features TYPE STB80NF55-08/-1 P80NF55-08 • ■ Figure 1:Package VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A


    Original     		PDF STP80NF55-08 STB80NF55-08 STB80NF55-08-1 D2PAK/I2PAK/TO-220 STB80NF55-08/-1 P80NF5 p80nf55-08 P80NF550 p80nf55 P80NF*55-08 P80NF b80nf55-08 b80nf55 P80NF5508 p80n

    P80NF04

    Abstract: STB80NF04 STB80NF04T4 STP80NF04 B80NF04
    Text: STB80NF04 P80NF04 N-CHANNEL 40V - 0.008 Ω - 80A D²PAK/TO-220 STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ TYPE VDSS RDS on ID STB80NF04 P80NF04 40 V 40 V < 0.010 Ω < 0.010 Ω 80 A 80 A TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		PDF STB80NF04 STP80NF04 PAK/TO-220 O-263) O-263 O-220 P80NF04 STB80NF04 STB80NF04T4 STP80NF04 B80NF04

    P80NF06

    Abstract: P80NF JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06
    Text: P80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A P80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability


    Original     		PDF STP80NF06 STB80NF06 STW80NF06 O-220/D2PAK/TO-247 STP80NF06 O-220 O-247 P80NF06 P80NF JESD97 STB80NF06 STB80NF06T4 STW80NF06

    Untitled

    Abstract: No abstract text available
    Text: P80NF10FP N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) P80NF10FP 100V <0.015Ω 38A • Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization


    Original     		PDF STP80NF10FP O-220FP

    pcb 308B

    Abstract: 308B nec 4308 EM 257 p4308 uPD75308 RA75X sx1 lcd TR122 UPD75304
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    p80nf55-08

    Abstract: w80nf55-08 w80nf55 P80NF5 ST MAKE mosfet p80nf55 08 14511 p80nf55 Transistor equivalents b80nf55-08 P80NF*55-08
    Text: STB80NF55-08T4 P80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features • Type VDSS RDS on max ID STB80NF55-08T4 55 V < 0.008 Ω 80 A P80NF55-08 55 V < 0.008 Ω 80 A STW80NF55-08 55 V < 0.008 Ω


    Original     		PDF STB80NF55-08T4 STP80NF55-08, STW80NF55-08 O-220, O-247 STP80NF55-08 O-220 p80nf55-08 w80nf55-08 w80nf55 P80NF5 ST MAKE mosfet p80nf55 08 14511 p80nf55 Transistor equivalents b80nf55-08 P80NF*55-08

    pcb 308B

    Abstract: EM 235 setting EM 257 p4308 75328 S7 em 223 nec 4308 P0016 p328 0108
    Text: User’s Manual IE-75300-R-EM 75X Series Emulation Board 75XL Series Emulation Board Version 1.47 For IE-75001-R IE-75000-R Document No. U11354EJ3V0UM00 3rd edition Date Published July 1997 N Printed in Japan 1994 [MEMO] EEPROM is a trademark of NEC Corporation.


    Original     		PDF IE-75300-R-EM IE-75001-R IE-75000-R U11354EJ3V0UM00 pcb 308B EM 235 setting EM 257 p4308 75328 S7 em 223 nec 4308 P0016 p328 0108