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    STMicroelectronics STP62NS04Z

    MOSFET N-CH 33V 62A TO220AB
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    P62NS04Z Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P62NS04Z STMicroelectronics N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET Original PDF

    P62NS04Z Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: P62NS04Z N-CHANNEL CLAMPED 12mΩ - 40A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET ADVANCED DATA TYPE P62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.014 Ω 40 A (*) TYPICAL RDS(on) = 0.012 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP62NS04Z O-220

    Untitled

    Abstract: No abstract text available
    Text: P62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE P62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP62NS04Z O-220

    Untitled

    Abstract: No abstract text available
    Text: P62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID P62NS04Z Clamped < 0.015 Ω 62 A 100% avalanche tested 1 ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature


    Original     		PDF STP62NS04Z O-220

    STP62NS04Z

    Abstract: SC12470 p62ns04z st mosfet st 393 st marking code
    Text: P62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY Power MOSFET Features • Type VDSS RDS on max ID P62NS04Z Clamped < 0.015 Ω 62 A 3 100% avalanche tested 1 ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 STP62NS04Z SC12470 p62ns04z st mosfet st 393 st marking code

    P62NS04Z

    Abstract: P62NS STP62NS04Z JESD97
    Text: P62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID P62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 P62NS04Z P62NS STP62NS04Z JESD97

    JESD97

    Abstract: P62NS04Z STP62NS04Z
    Text: P62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) Clamped <0.015Ω ID ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram


    Original     		PDF STP62NS04Z O-220 JESD97 P62NS04Z STP62NS04Z

    P62NS04Z

    Abstract: STP62NS04Z JESD97 mosfet 100A ST P62N
    Text: P62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET General features Type VDSS @Tjmax RDS(on) ID P62NS04Z Clamped <0.015Ω 62A • 100% avalanche tested ■ Low capacitance and gate charge ■ 175° C maximum junction temperature


    Original     		PDF STP62NS04Z O-220 P62NS04Z STP62NS04Z JESD97 mosfet 100A ST P62N

    p62ns04z

    Abstract: STP62NS04Z
    Text: P62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET VDSS RDS on ID CLAMPED <0.015 Ω 62 A TYPE P62NS04Z • ■ ■ ■ TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION


    Original     		PDF STP62NS04Z O-220 p62ns04z STP62NS04Z

    P62NS04Z

    Abstract: TO-220Fully STP62NS04Z
    Text: P62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE P62NS04Z • ■ ■ ■ VDSS RDS on ID CLAMPED < 0.015 Ω 62 A TYPICAL RDS(on) = 0.0125 Ω 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE


    Original     		PDF STP62NS04Z O-220 P62NS04Z TO-220Fully STP62NS04Z