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    STMicroelectronics STP50NE10

    MOSFET N-CH 100V 50A TO220AB
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    DigiKey STP50NE10 Tube 1,000
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    STMicroelectronics STP50NE08

    MOSFET N-CH 80V 50A TO220AB
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    DigiKey STP50NE08 Tube 1,000
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    Bristol Electronics STP50NE10L 10
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    STMicroelectronics STP50NE06

    Electronic Component
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    ComSIT USA STP50NE06 50
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    P50NE Datasheets Context Search

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    P50NE08

    Abstract: p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850
    Text: P50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P50NE08 • ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


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    STP50NE08 P50NE08 O-220 P50NE08 p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850 PDF

    p50ne1

    Abstract: No abstract text available
    Text: P50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID P50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t


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    STP50NE10 O-220 p50ne1 PDF

    p50ne1

    Abstract: P50NE10 p50ne STP50NE10
    Text: P50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID P50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


    Original
    STP50NE10 O-220 O-220 STP50NE10 P50Nerein p50ne1 P50NE10 p50ne PDF

    p50ne1

    Abstract: p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10
    Text: P50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID P50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


    Original
    STP50NE10 O-220 p50ne1 p50ne10 st mosfet st 50a st 393 JESD97 STP50NE10 PDF