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    P452 Price and Stock

    Infineon Technologies AG ISP452HUMA1

    IC PWR SWTCH N-CHAN 1:1 SOT223-4
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    DigiKey ISP452HUMA1 Cut Tape 7,426 1
    • 1 $2.18
    • 10 $1.551
    • 100 $1.2224
    • 1000 $1.05019
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    ISP452HUMA1 Digi-Reel 7,426 1
    • 1 $2.18
    • 10 $1.551
    • 100 $1.2224
    • 1000 $1.05019
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    ISP452HUMA1 Reel 7,400 4,000
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    Newark ISP452HUMA1 Bulk 623 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.08
    • 1000 $0.996
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    Chip1Stop ISP452HUMA1 Cut Tape 8,000
    • 1 $1.93
    • 10 $1.64
    • 100 $1.39
    • 1000 $0.912
    • 10000 $0.82
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    EBV Elektronik ISP452HUMA1 21 Weeks 4,000
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    South Electronics ISP452HUMA1
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    Win Source Electronics ISP452HUMA1 37,885
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    • 100 $1.798
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    Diodes Incorporated ZVP4525ZTA

    MOSFET P-CH 250V 205MA SOT89-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZVP4525ZTA Digi-Reel 4,673 1
    • 1 $1.3
    • 10 $0.816
    • 100 $1.3
    • 1000 $0.42134
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    ZVP4525ZTA Cut Tape 4,673 1
    • 1 $1.3
    • 10 $0.816
    • 100 $1.3
    • 1000 $0.42134
    • 10000 $0.42134
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    ZVP4525ZTA Reel 4,000 1,000
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    • 1000 $0.38311
    • 10000 $0.30188
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    Newark ZVP4525ZTA Cut Tape 446 1
    • 1 $1
    • 10 $0.877
    • 100 $0.63
    • 1000 $0.539
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    Bristol Electronics ZVP4525ZTA 1,000
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    Avnet Asia ZVP4525ZTA 8 Weeks 1,000
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    Avnet Silica ZVP4525ZTA 10 Weeks 1,000
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    New Advantage Corporation ZVP4525ZTA 1,000 1
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    South Electronics ZVP4525ZTA
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    Insight SiP ISP4520-US-ST

    RF TXRX MOD BT TH SMD
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    DigiKey ISP4520-US-ST Tray 1,199 50
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    • 100 $17.175
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    Magnetics 0P45224EC

    FERRITE CORE EC 4.2UH P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 0P45224EC Bulk 789 1
    • 1 $3.04
    • 10 $2.083
    • 100 $1.5646
    • 1000 $1.15
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    Abracon Corporation ACMP-4528-900-T

    CMC 3A 2LN 90 OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACMP-4528-900-T Cut Tape 341 1
    • 1 $0.69
    • 10 $0.534
    • 100 $0.4146
    • 1000 $0.37472
    • 10000 $0.37472
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    ACMP-4528-900-T Digi-Reel 341 1
    • 1 $0.69
    • 10 $0.534
    • 100 $0.4146
    • 1000 $0.37472
    • 10000 $0.37472
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    Avnet Americas ACMP-4528-900-T Reel 16 Weeks 500
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    Newark ACMP-4528-900-T Cut Tape 480 5
    • 1 $0.791
    • 10 $0.578
    • 100 $0.363
    • 1000 $0.313
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    Find more P452 price and stock on Findchips.com

    P452 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P452-006 Tripp Lite D-Sub Cables, Cable Assemblies, CABLE NULL MODEM DB25F/F 6' Original PDF

    P452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: P452-006 6-ft. Null Modem Gold Cable, DB25F to DB25F Highlights Superior molded cables with foil-shielding for maximum EMI/RFI protection


    Original     		PDF P452-006 DB25F DB25F

    Untitled

    Abstract: No abstract text available
    Text: 6-ft. Null Modem Gold Cable, DB25F to DB25F MODEL NUMBER: P452-006 Highlights Superior molded cables with foil-shielding for maximum EMI/RFI protection Gold-plated connectors provide superior conductivity Null modem cables connect two serial devices that require a null


    Original     		PDF DB25F DB25F P452-006 DB25M

    G200

    Abstract: f 0952
    Text: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF G200 f 0952

    P281 B01

    Abstract: G187
    Text: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style


    Original     		PDF DS871 Zynq-7000 P281 B01 G187

    0.047 mf capacitor

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF 0.047 mf capacitor

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
    Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold


    Original     		PDF 220ohm, 1-877-GOLDMOS 1522-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136

    500 watts amplifier schematic diagram

    Abstract: OZ 960 OZ 960 S G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF P4525-ND P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram OZ 960 OZ 960 S G200

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C008A/B/F, R7F0C009A/B/F 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,


    Original     		PDF R7F0C008A/B/F, R7F0C009A/B/F 16-Bit R01UH0399EJ0200

    500 watts amplifier schematic diagram

    Abstract: NGT 03 G200
    Text: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full


    Original     		PDF 70pacitor, P5182-ND 220ohm, 220qbk-no 1-877-GOLDMOS 1522-PTF 500 watts amplifier schematic diagram NGT 03 G200

    12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA0105A-1 RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.1 November 2004 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from


    Original     		PDF RB-TA0105A-1 RB-TA0105A-2 RB-TA0105A TA0105A RB-TA0105A, RB-TA0105A-1 /-60V /-93V 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram

    resistor 220 ohm

    Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
    Text: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization


    Original     		PDF P220ECT-ND 1-877-GOLDMOS 1522-PTF resistor 220 ohm capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E

    12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: 400w audio amplifier circuit diagram TA0105A TDA2500 TRIPATH 400W stereo amplifier 400W RB-TA0105 RB-TA0105A-2 400w audio amplifier diagram 400w mosfet audio amplifier circuit diagram
    Text: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.2 June 2005 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from


    Original     		PDF RB-TA0105A-2 RB-TA0105A TA0105A TDA2500 /-125V /-185V RRJ-1WYJ330U T106-2 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 400w audio amplifier circuit diagram TDA2500 TRIPATH 400W stereo amplifier 400W RB-TA0105 RB-TA0105A-2 400w audio amplifier diagram 400w mosfet audio amplifier circuit diagram

    AT27280

    Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
    Text: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTFA212002E PTFA212002E 200-watt, AT27280 variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 SMD TRANSISTOR MARKING 904

    200B

    Abstract: BCP56 LM7805 PTFA210451E infineon gold
    Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210451E PTFA210451E 45-watt, 200B BCP56 LM7805 infineon gold

    aw7 TRANSISTOR

    Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


    Original     		PDF

    A2103

    Abstract: No abstract text available
    Text: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA


    Original     		PDF PTFA210301E PTFA210301F 30-watt, PTFA210301F* A2103

    Untitled

    Abstract: No abstract text available
    Text: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and


    Original     		PDF PTFA081501E PTFA081501F 150-watt, CDMA2000 PTFA081501F* IS-95

    2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149
    Text: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride


    Original     		PDF 1-877-GOLDMOS 1301-PTF 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149

    infineon 018

    Abstract: No abstract text available
    Text: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization


    Original     		PDF PTF180101 PTF180101 infineon 018

    po111

    Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501GL PTFA041501HL 150-watt PG-64248-2 IS-95 po111 3773 transistor voltage diagram BCP56 LM7805 infineon gold

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    3.7v 1500mA battery

    Abstract: LP452030HA 205MAX LP-45
    Text: EEMB BATTERY P452030HA Lithium Polymer Battery B rie fD a ta s he e t 1 BASIC SPECIFICATION P452030HA 1 Bat tery Type 2 Nomi nal C apaci ty 3 Nomi nal Vol tage 3. 7V 0. 2C d i s c har ge 4 Char gi ng Vol tage 4.2V± 0 .05V Typical 160mAh ( 0 . 2 C d i s c h a r g e )


    OCR Scan     		PDF LP452030HA 160mAh 150mAh 150mA 1500mA Cto45Â 500cycles 3.7v 1500mA battery 205MAX LP-45

    RCA Solid State

    Abstract: CD4529B 15-V ICAN-6525
    Text: I t c / Solid State l ts P 1 tí* * - ' CD4529B Types ft 'hi oes* tr r Ö f lY S ä ü CMOS Logic ICs ssi-e? : Ar§-: CMOS Dual 4-Channel Analog Data Selector High-Voltage Types 20-Volt Rating V DD = PIN 16 V s s = P IN 8 9 2 C S - 39293 FUNCTIO NAL DIAGRAM


    OCR Scan     		PDF CD4529B 92CS-39293 20-Volt 92CM-I 5967R4 1CE-402, RCA Solid State 15-V ICAN-6525