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    TDK Epcos B72220P3511K101

    VARISTOR 820V 10KA DISC 20MM
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    Altech Corporation MVP351-15-V

    PCB TERM BLK, 15.0MM, 1 POLE, FR
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    Altech Corporation MVP351-15-V-KK

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    Altech Corporation MVP351-15-V-KD

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    Altech Corporation MVP351-15-V-KS

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    P3511 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P35-1110 Daico Industries GaAs MESFET Scan PDF
    P35-1110 DAICO Industries GaAs MESFET for OPTO Receivers Scan PDF
    P35-1110-0 Bookham Technology MesFET Die For Opto Receivers Original PDF
    P35-1110-0-1 Marconi Optical Components MESFET for Fibre Optic Receivers Original PDF
    P35-1110-1 Bookham Technology MESFET FOR OPTO RECEIVERS Original PDF
    P35-1110-1 Bookham Technology Packaged MesFET For Opto Receivers Original PDF

    P3511 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sm 0038 receiver

    Abstract: Bookham Technology Bookham P35-1110 NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG
    Text: MESFET for OPTO Receivers Performance Optimised to provide high gm and low gate leakage Features General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS Low gate leakage current, typically 10nA at -5 Volts


    Original     		PDF P35-1110 467/SM/00147/200 P35-1110-0 P35-1110-1 sm 0038 receiver Bookham Technology Bookham NN12 P35-1110-0 P35-1110-1 JWT 4 pin 80IN 15PB 5AG

    opto transistor moc

    Abstract: NN12 P35-1110 P35-1110-0 P35-1110-1
    Text: P35-1110 Marconi Optical Components MESFET for Fibre Optic Receivers Performance Optimised to provide high gm and low gate leakage Features • · · · · · · General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver


    Original     		PDF P35-1110 P35-1110 fabricatIn/10Pb/Ag 5Sn/37 5Pb/25In 182nd P35-1110-0 P35-1110-1 467/SM/00147/200 opto transistor moc NN12 P35-1110-0 P35-1110-1

    Untitled

    Abstract: No abstract text available
    Text: P35-1105-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1105-2

    Untitled

    Abstract: No abstract text available
    Text: P35-1105-1 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1105-1

    Untitled

    Abstract: No abstract text available
    Text: P35-1105-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1105-0

    Untitled

    Abstract: No abstract text available
    Text: P35-1110-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)350m Maximum Operating Temp (øC)175 I(DSS) Min. (A)15m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1110-2

    Untitled

    Abstract: No abstract text available
    Text: P35-1101-0 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1101-0

    Untitled

    Abstract: No abstract text available
    Text: P35-1101-2 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)300m Maximum Operating Temp (øC)150 I(DSS) Min. (A)10m I(DSS) Max. (A)50m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.


    Original     		PDF P35-1101-2

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    356 opto

    Abstract: 80In/15pb/5ag P35-1110 NN12 P35-1110-0 P35-1110-1 micro-x 420 bookham
    Text: Data sheet MESFET for OPTO Receivers Features • General purpose amplifier in PIN FET receiver Performance Optimised to provide high gm • Transimpedance amplifier for wide band PIN FET receiver and low gate leakage • High gm, typically 45mS • Low gate leakage current,


    Original     		PDF P35-1110 P35-1110-0 P35-1110-1 467/SM/00147/200 356 opto 80In/15pb/5ag NN12 micro-x 420 bookham

    microwave MARCONI

    Abstract: NN12 P35-1110 P35-1110-0 P35-1110-1
    Text: P35-1110 MESFET FOR OPTO RECEIVERS Performance Optimised to provide high gm and low gate leakage Features • • • • • • • General purpose amplifier in PIN FET receiver Transimpedance amplifier for wide band PIN FET receiver High gm, typically 45mS


    Original     		PDF P35-1110 P35-1110 P35-1110-0 P35-1110-1 467/SM/00147/200 microwave MARCONI NN12 P35-1110-0 P35-1110-1

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    P5310B

    Abstract: 3004 IC
    Text: Hy Hybrid ICs Packaging Specifications Packaging Specifications and Unit for Standard Hybrid 1C Products Part No. Packaging style Quantity/unit Soft case 25 100 B P 3510 Soft case 20 100 B P3511 Soft case 20 120 B P 5020 Soft case 20 100 B P5021 Soft case


    OCR Scan     		PDF P3511 P5021 51L05 51L12 P5307 BP531 BP5317, BP5315, P5310B 3004 IC

    opto fet

    Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
    Text: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers


    OCR Scan     		PDF P35-1110 0242A opto fet 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn

    Untitled

    Abstract: No abstract text available
    Text: FEATURES MODEL NO. P35-1110 • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver GaAs MESFET For OPTO Receivers ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE


    OCR Scan     		PDF P35-1110 DDQ21

    X band attenuator

    Abstract: 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052
    Text: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ General Purpose Amplifier In PIN FET Receiver Clï ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts


    OCR Scan     		PDF 0001fl3D p35-1110 DS0990 DA0769 DA0996 X band attenuator 5V SPST RELAY P35-1110 gaas fet gm pin s for 5V DPDT RELAY GEC Marconi DA0035 DA0784-1 DA0786 DS0052

    Untitled

    Abstract: No abstract text available
    Text: P35-1110 Features • General purpose amplifier in PIN FET Receiver • Transimpedance amplifier for wide band PIN FET Receiver • High gm, typically 45mS. • Low gate leakage current, typically lOnA at -5 volts. • No selection required • Low Cgs, typically 0.4pF.


    OCR Scan     		PDF P35-1110 37bfiS01 182nd P35-1110-0 P35-1110-1 P35-1110-2 HPAC-70

    Untitled

    Abstract: No abstract text available
    Text: I NTLS LTD 2S 37bôSQl OQQQQfi? 3 16 ML PLESSEY T -3 /-3 .5 " Three Five Product Information GaAs MESFET for Opto-Receivers P35-1110 ' H . i i :-jiV -*j Performance optimised to provide high gm and lo w gate leakage . Features • General purpose amplifier in


    OCR Scan     		PDF P35-1110

    GEC Marconi

    Abstract: marconi
    Text: & FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transim pedance Amplifier For W ide Band PIN FET Receiver ■ MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts


    OCR Scan     		PDF P35-1110 GEC Marconi marconi

    GaAs MESFET

    Abstract: P35421 p354101 P35-4252
    Text: GaAs Monolithic Microwave Integrated Circuits • Amplifiers • Switches T W , ' isV.'r, 1 _j P Lm airMRtl] P •: » DAICO INDUSTRIES GaAs MMIC’s SPECIFICATION TABLE Spec Freq GHz Part Number Gain dB Typ VSWR TYP Output Power dBm Noise Figure +13 +22 +22


    OCR Scan     		PDF P35-4104 P35-4100 P35-4101 P35-4110 P35-4150 P35-5100 P35-4140 SPECIFICA14 P35-4211 P35-4215 GaAs MESFET P35421 p354101 P35-4252

    Untitled

    Abstract: No abstract text available
    Text: DAICO INDUSTRIES INC blE D • ZbDMTEO 0001fl3D *122 ■ DAI FEATURES ■ Transim pedance Amplifier For W ide Band PIN FE T Receiver ■ High Gm, Typically 45 mS ■ Low G ate Leakage Current, Typically 10nA At -5 Volts ■ No Selection Required ■ Low Cgs, Typically 0.4 pF


    OCR Scan     		PDF 0001fl3D P35-1110 D4T50

    Ablebond 36-2

    Abstract: Multicore Solders
    Text: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators


    OCR Scan     		PDF P35-1105 12GHz P35-1105-0 Ablebond 36-2 Multicore Solders

    marconi

    Abstract: No abstract text available
    Text: FEATURES ÂféO Ô EL NO. • General Purpose Amplifier In PIN FET Receiver Ï ^ # 8 6 -1 1 1 0 ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts GATE ■ No Selection Required


    OCR Scan     		PDF

    mmic 211

    Abstract: P35421
    Text: GaAs Monolithic Microwave Integrated Circuits • Amplifiers • Switches H f: 203 ' T • S 3 -. L-<- DAICO INDUSTRIES GaAs MMIC’s SPECIFICATION TABLE Spec Freq GHz Part Number GaAs MMIC AMPLIFIERS P35-4104 0.05-3.0 0.05-3.5 P35-4100 0.5-3.5 P35-4101 Gain


    OCR Scan     		PDF P35-4104 P35-4100 P35-4101 P35-4110 P35-4150 P35-5100 P35-4140 P35-4211 P35-4215 P35-4227 mmic 211 P35421