PD10M441H
Abstract: No abstract text available
Text: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
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PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
PD10M441H440H
P2H10M441H440H
Weight220g
Duty50
PD10M441H/P2H10M441H
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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50V/500V
P2H10M441H
P2H10M440H
300KHz
P2H10M441H
171/W
-441H
-440H
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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50V/500V
P2H10M441H
P2H10M440H
300KHz
P2H10M441H
171/W
-441H
-440H
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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50V/500V
P2H10M441H
P2H10M440H
300KHz
P2H10M441H
P2H10M44xH
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PDF
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ID40A
Abstract: No abstract text available
Text: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
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Original
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PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
PD10M441H440H
P2H10M441H440H
Weight220g
Duty50
PD10M441H/P2H10M441H
ID40A
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PDF
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IR 440H
Abstract: No abstract text available
Text: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage
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Original
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50500V
PD10M441H/440H
PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
P2H10M441H/440H
PD10M441H/P2H10M441H
PD10M440H/P2H10M440H
171/W
IR 440H
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET 85A 450~500 V PD10M441H PD10M440H P2H10M441H P2H10M440H •回路図 CIRCUIT PD P2H Rg Rg MOS SBD FRD 1 D2S1 2 SBD D1 MOS G2 S2 MOS SBD 3 S2 FRD FRD S1 S2 D1 SBD MOS D2 FRD S1 G1 G2 S2 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm）
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Original
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PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
PD10M441H440H
P2H10M441H440H
Weight220g
Duty50
PD10M441H/P2H10M441H
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PDF
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IR 440H
Abstract: P2H10M441H PD10M440H 441H P2H10M440H PD10M441H 20a04
Text: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧
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Original
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50500V
PD10M441H/440H
PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
P2H10M441H/440H
PD10M441H/P2H10M441H
PD10M440H/P2H10M440H
171/W
IR 440H
PD10M440H
441H
P2H10M440H
PD10M441H
20a04
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFET 85A 450～ 450～500V PD10M441H/440H PD10M441H PD10M440H P2H10M441H P2H10M440H P2H10M441H/440H 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage
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Original
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50500V
PD10M441H/440H
PD10M441H
PD10M440H
P2H10M441H
P2H10M440H
P2H10M441H/440H
PD10M441H/P2H10M441H
PD10M440H/P2H10M440H
171/W
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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NE32184A
Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B
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OCR Scan
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NE345L-10B
NE345L-20B
NE20248
NE24200
NE24283A
NE32084
4/12GBz
NE76038
4/12GHz
NE76184A
NE32184A
Ku-BAND
NEZ1011-4A
nec x-band
ne32684a
hz nec
NE42184A
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