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    P281 Search Results

    P281 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    82P2816BBG Renesas Electronics Corporation 16(+1) Channel T1/J1/E1 Short Haul LIU Visit Renesas Electronics Corporation
    82P2816ABBG Renesas Electronics Corporation 16(+1) Channel T1/J1/E1 Short Haul LIU Visit Renesas Electronics Corporation
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    P281 Price and Stock

    ATGBICS QSFP28-100GB-ZR4-AV-C

    Compatible QSFP28 100G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QSFP28-100GB-ZR4-AV-C Tray 8,770 1
    • 1 $3666
    • 10 $3666
    • 100 $3482.7
    • 1000 $3116.1
    • 10000 $3116.1
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    ATGBICS DAC-QSFP28-100G-2M-C

    Compatible DAC 100G 2m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DAC-QSFP28-100G-2M-C Bag 6,424 1
    • 1 $89
    • 10 $89
    • 100 $84.55
    • 1000 $75.65
    • 10000 $75.65
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    Isocom Components ISP281E

    OPTOCOUPLER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISP281E Reel 3,000 3,000
    • 1 -
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    • 10000 $0.126
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    ISP281E Cut Tape 2,337 1
    • 1 $0.58
    • 10 $0.338
    • 100 $0.2181
    • 1000 $0.15661
    • 10000 $0.15661
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    NAC ISP281E 3,000
    • 1 $0.1615
    • 10 $0.1615
    • 100 $0.1615
    • 1000 $0.1615
    • 10000 $0.1088
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    Rochester Electronics LLC NCP2811BMTTXG

    AUDIO AMPLIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP2811BMTTXG Bulk 1,900 683
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    Amphenol ProLabs QSFP28-100GB-LR4-20-EX-C

    Extreme Networks Compatible TAA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QSFP28-100GB-LR4-20-EX-C 592 1
    • 1 $3515.75
    • 10 $3515.75
    • 100 $3339.9624
    • 1000 $3164.175
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    Find more P281 price and stock on Findchips.com

    P281 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P281 Polyfet RF Devices PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    P2811 Alliance Semiconductor Low Power EMI Reduction IC Original PDF
    P2811A-08SR Alliance Semiconductor 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Original PDF
    P2811A-08SRF Alliance Semiconductor Low Power EMI Reduction IC Original PDF
    P2811A-08SRF On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, SOIC-8, Clock Generator Original PDF
    P2811A-08ST Alliance Semiconductor 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Original PDF
    P2811A-08STF Alliance Semiconductor Low Power EMI Reduction IC Original PDF
    P2811A-08STF On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, SOIC-8, Clock Generator Original PDF
    P2811A-08TR Alliance Semiconductor 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Original PDF
    P2811A-08TRF Alliance Semiconductor Low Power EMI Reduction IC Original PDF
    P2811A-08TRF On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, TSSOP-8, Clock Generator Original PDF
    P2811A-08TT Alliance Semiconductor 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Original PDF
    P2811A-08TTF Alliance Semiconductor Low Power EMI Reduction IC Original PDF
    P2811A-08TTF On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, TSSOP-8, Clock Generator Original PDF
    P2811A-B Alliance Semiconductor Input Frequency Range 6 MHz to 210 MHz Original PDF
    P2811AF-08SR On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, SOIC-8, Clock Generator Original PDF
    P2811AF-08ST On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, SOIC-8, Clock Generator Original PDF
    P2811AF-08TR On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, TSSOP-8, Clock Generator Original PDF
    P2811AF-08TT On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, TSSOP-8, Clock Generator Original PDF
    P2811-B-08SR On Semiconductor P2811 - IC 40 MHz, OTHER CLOCK GENERATOR, PDSO8, SOIC-8, Clock Generator Original PDF

    P281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p281

    Abstract: P28-1 TRANSISTOR P281
    Text: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


    Original     		PDF

    ms8351

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)


    Original     		PDF MS8351 P2819 MS8351 p0105 x10-13

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads


    Original     		PDF MS8350 P2819 x10-13

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low RS Series Pair MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 65 fF Typ. ● Low Series Resistance (3  Typ.) ● Cut-Off Frequency > 500 GHz ● Large Gold Bond Pads


    Original     		PDF MS8350 P2819 MS8350 x10-13

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features ● Capacitance 45 fF Typ. ● Low Series Resistance (7  Typ.)


    Original     		PDF MS8351 P2819 MS8351 x10-13

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes TM Low CT Series Pair MS8351 – P2819 Flip Chip GaAs Schottky: Series Pair – Low Capacitance Design Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 45 fF Typ. Low Series Resistance (7  Typ.)


    Original     		PDF MS8351 P2819 MS8351 x10-13

    CY25811

    Abstract: CY25812 CY25814 P2811 P2811A-08ST P2812 P2814
    Text: P2811/12/14 October 2003 rev Low-Power EMI Reduction IC Features Deviation and Spread Option Selections section . These combinations include Down Spread, Center Spread and percentage deviation range from ±0.625% to -3.50%. ƒ FCC approved method of EMI attenuation


    Original     		PDF P2811/12/14 P2811, P2812, P2814 P2811: P2812: P2814: CY25811 CY25812 CY25814 P2811 P2811A-08ST P2812 P2814

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diodes Low RS Series Pair TM MS8350 – P2819 Dimensions Size: 28 x 19 mils Thickness: 5 mils Bond Pad Size: 5 x 5 mils Features Capacitance 65 fF Typ. Low Series Resistance (3  Typ.) Cut-Off Frequency > 500 GHz Large Gold Bond Pads Description


    Original     		PDF MS8350 P2819 MS8350 x10-13

    Untitled

    Abstract: No abstract text available
    Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B


    Original     		PDF P2811A/B P2812A/B P2814A/B P2811A/B P2812A/B 10MHz 40MHz CY25811, CY25812

    p281

    Abstract: CY25811 CY25812 CY25814 i2811
    Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B


    Original     		PDF P2811A/B P2812A/B P2814A/B P2811A/B P2812A/B 10MHz 40MHz CY25811, CY25812 p281 CY25811 CY25812 CY25814 i2811

    Untitled

    Abstract: No abstract text available
    Text: P2811/12/14 October 2003 rev Low-Power EMI Reduction IC Features Deviation and Spread Option Selections section . These combinations include Down Spread, Center Spread and percentage deviation range from ±0.625% to -3.50%. ƒ FCC approved method of EMI attenuation


    Original     		PDF P2811/12/14 P2811, P2812, P2814 P2811: P2812: P2814:

    P2812

    Abstract: CY25811 CY25812 CY25814 P2811 P2814
    Text: Preliminary January 2003 P2811/12/14 Low Power EMI Reduction IC Features • • • • • • FCC approved method of EMI attenuation Provides up to 15 dB EMI reduction Generates 1X, 2X, and 4X low EMI spread spectrum clock of the input frequency 1X: P2811, 2X: P2812, 4X: P2814


    Original     		PDF P2811/12/14 P2811, P2812, P2814 P2811: P2812: P2814: P2812 CY25811 CY25812 CY25814 P2811 P2814

    P2811

    Abstract: P2812 P2814
    Text: PRELIMINARY Specification Alliance Semiconductor P2811/12/14 Low Power EMI Reduction IC FEATURES • FCC approved method of EMI attenuation • Provides up to 15 dB EMI Reduction • Generates 1X, 2X, and 4X low EMI spread spectrum clock of the input frequency


    Original     		PDF P2811/12/14 P2811, P2812, P2814 40MHz P2811: P2812: P2814: P2811 P2812 P2814

    Untitled

    Abstract: No abstract text available
    Text: P2811A/B and P2812A/B and P2814A/B Low Power EMI Reduction IC Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B


    Original     		PDF P2811A/B P2812A/B P2814A/B 10MHz 40MHz CY25811, CY25812

    P281 B01

    Abstract: G187
    Text: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style


    Original     		PDF DS871 Zynq-7000 P281 B01 G187

    Untitled

    Abstract: No abstract text available
    Text: Product Obsolete/Under Obsolescence R XC4000XLA Family Field Programmable Gate Arrays Package Pinouts XC4013XLA Pinout Table XC4013XLA Pinout Table Continued XC4013XLA Pinout Table PAD NAME PQ160 PQ208 PQ240 I/O – – P21 BG256 H1 PAD NAME PQ160 PQ208


    Original     		PDF XC4000XLA XC4013XLA PQ160 PQ208 PQ240 BG256

    IDT71256

    Abstract: IDT71256L IDT71256S
    Text: CMOS Static RAM 256K 32K x 8-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ The IDT 71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Address access times as fast as 20ns are available with power


    Original     		PDF 144-bit 350mW x4033 IDT71256 IDT71256L IDT71256S

    transistor bl p89

    Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
    Text: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet


    Original     		PDF XC4000E XC4000X XC4000 XC4000EX XC4000XL transistor bl p89 bl p74 transistor J955 XC4000A XC4000D XC4000H p180 g8

    B8000

    Abstract: Miniature Switch Miniature Switches Electroswitch P281B P281 SA1RV20 Electroswitch series 20 B8103 B8500
    Text: MINIATURE SWITCHES Sub Miniature Pushbutton Switches for Printed Circuit Boards — Wave Solderable Series B8000 PCB Pushbutton Switches SPECIFICATIONS • • • • Mechanical life — 500,000 operations minimum Contact resistance — 25 milliohms maximum


    Original     		PDF B8000 SA1RV20 SA1BV20 SA1BW20 SA1RW20 SW53AA1 SW53AA2 Miniature Switch Miniature Switches Electroswitch P281B P281 SA1RV20 Electroswitch series 20 B8103 B8500

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices P281 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


    OCR Scan     		PDF 7E410D1 000D2T3

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256SA Integrated D evice Technology, Inc. FEATURES: DESCRIPTION: • 32K x 8 advanced high-speed C M O S static RAM • Equal access and cycle times — Commercial: 1 2 /1 5/20/25ns • O ne Chip S elect plus one Output Enable pin


    OCR Scan     		PDF IDT71256SA 5/20/25ns 28-pin 71256S 200mV 600-mil P28-1) 300-mil P28-2)

    Untitled

    Abstract: No abstract text available
    Text: CMOS ASYNCHRONOUS FIFO 65,536 X 9 ADVANCED INFORMATION IDT7208 Integrated Device Technology, Inc. internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for


    OCR Scan     		PDF IDT7208 IDT7208

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 32K x 8-BIT IDT71256S IDT71256L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed address/chip select time — Military: 25 /30/3 5/45 /5 5 /7 0 /8 5 /1 0 0 /1 2 0 /1 50ns (max.) — Commercial: 20/25/35/45ns (max.)


    OCR Scan     		PDF IDT71256S IDT71256L 20/25/35/45ns 28-pin 28-pin 32-pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed ad dress/chip se le ct access tim e — M ilitary: 20 /25/3 0/35 /45/55/7 0/85 ns (m ax.) — C om m ercia l: 15/2 0/25 /30/35ns (m ax.)


    OCR Scan     		PDF IDT7164S IDT7164L /30/35ns 28-pin 32-pin T7164 D28-3) D28-1) P28-1) P28-2)