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    P21N6 Search Results

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    P21N6 Price and Stock

    Rochester Electronics LLC FCP21N60N

    N-CHANNEL, MOSFET
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    DigiKey FCP21N60N Tube 17,389 130
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    FCP21N60N Bulk 6,400 130
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    • 1000 $2.31
    • 10000 $2.31
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    STMicroelectronics STP21N65M5

    MOSFET N-CH 650V 17A TO220AB
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    DigiKey STP21N65M5 Tube 2,110 1
    • 1 $3.06
    • 10 $3.06
    • 100 $2.0813
    • 1000 $2.03574
    • 10000 $2.03574
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    Avnet Americas STP21N65M5 Tube 2,000 14 Weeks 1,000
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    Mouser Electronics STP21N65M5 996
    • 1 $3.06
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    • 100 $2.09
    • 1000 $2.03
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    Newark STP21N65M5 Bulk 1,000
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    STMicroelectronics STP21N65M5 996 1
    • 1 $3
    • 10 $3
    • 100 $2.05
    • 1000 $2
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    TME STP21N65M5 1
    • 1 $5.54
    • 10 $4.99
    • 100 $3.96
    • 1000 $3.7
    • 10000 $3.7
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    Ameya Holding Limited STP21N65M5 10,000
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    ComSIT USA STP21N65M5 200
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    Avnet Silica STP21N65M5 1,950 15 Weeks 50
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    EBV Elektronik STP21N65M5 15 Weeks 50
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    Win Source Electronics STP21N65M5 136,050
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    • 100 $1.16
    • 1000 $0.942
    • 10000 $0.942
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    onsemi FCP21N60N

    MOSFET N-CH 600V TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCP21N60N Tube
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    Avnet Americas FCP21N60N Tube 4 Weeks 157
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    • 1000 $2.176
    • 10000 $2.048
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    Rochester Electronics FCP21N60N 6,400 1
    • 1 $2.33
    • 10 $2.33
    • 100 $2.19
    • 1000 $1.98
    • 10000 $1.98
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    Vishay Siliconix IRFP21N60L

    MOSFET N-CH 600V 21A TO247-3
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    DigiKey IRFP21N60L Tube
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    Vishay Siliconix IRFP21N60LPBF

    MOSFET N-CH 600V 21A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP21N60LPBF Tube 500
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    • 1000 $4.03596
    • 10000 $3.78184
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    P21N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    PDF P21N60E/D GP21N60E 21A-06 O-220AB

    p21n6

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M P21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan
    PDF P21N60E/D p21n6