NEC 9712
Abstract: 2SC5676
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA872TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA872TD
S21e2
2SC5676)
2SC5676
PA872TD-T3
NEC 9712
2SC5676
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2SC5704-T3
Abstract: 2SC5704 8822 TRANSISTOR NEC 2705
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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2SC5704
2SC5704-T3
2SC5704-T3
2SC5704
8822 TRANSISTOR
NEC 2705
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2SC5600
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA871TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low voltage operation, low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
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PA871TD
S21e2
2SC5600)
2SC5600
PA871TD-T3
2SC5600
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2SC5649
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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554-1
Abstract: 2SC5676
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MMO 90-14
Abstract: 2SC5704 2SC5704-T3
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SC5704
2SC5704-T3
P15364JJ1V0DS
MMO 90-14
2SC5704
2SC5704-T3
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2sc5704
Abstract: No abstract text available
Text: NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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NE662M16
2SC5704
NE662M16-A
2SC5704-A
NE662M16-T3-A
2SC5704-T3-A
P15364EJ1V0DS
2sc5704
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a1069 nec
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5603
Abstract: 2SC5676
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor
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PA846TD
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
2SC5603
2SC5676
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2SC5704
Abstract: 2SC5704-T3 renesas 7785
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5603
Abstract: 2SC5676 marking ny
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SC5600
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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DTS108
Abstract: 2n2585 DTS103 DTS106 BUY27
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
DTS108
2n2585
DTS103
DTS106
BUY27
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vlt 2900
Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „
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uPD78P334
78P334
78334C
PD78334
32768X8
J2T43Bt\
24-i-
vlt 2900
UPD78P334LQ
78p334
78P334LQ
IC-8075
s13s3
T02I
TFK 082
MPD78P334
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MHT1810
Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
MHT1810
2n1821
113003
2N463
MHT2008
2n2585
A580-1202
A580-1603
ASZ16
MP1534
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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Untitled
Abstract: No abstract text available
Text: That EWLETT mL'fíM H PA CK A R D 1 x 9 Fiber Optic Transceivers for Fibre Channel Technical Data HFBR-53D3 Family, 850 nm VCSEL HFCT-53D3 Family, 1300 nm FP Laser Features Applications: • H FBR-53D3 is C om pliant w ith A NSI X 3.297-1996 F ib re C h an nel P h ysical
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HFBR-53D3
HFCT-53D3
FBR-53D3
100-M
100-M6-SN-I
100-SM-LC-L
HFBR-53D3:
HFBR-53D3EM
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0408 Diode 1045
Abstract: No abstract text available
Text: WEM HEW LETT wLt M P A C K A R D Fibre Channel 1062.5 MBd 850 nm VCSEL Transceiver in Low C ost 1x9 Package Style Preliminary Technical Data HFBR-5303 Fam ily F eatures • C om pliant w ith A N SI X 3 .2 3 0 -1 9 9 4 F ib re C hannel P h ysical In terfa ce FC-PH-2
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HFBR-5303
100-M
HFBR-5303E
HFBR-5303F
0408 Diode 1045
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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B170008
Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
B170008
113003
B170002
B170003
B170007
A580-0403
2n2585
B170004
SDT8111
B170005
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2N2128
Abstract: T4 0660 2N5577 2N5579 MD38
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
2N2128
T4 0660
2N5577
2N5579
MD38
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TI3028
Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
75OP0
A580-2405
250kSA
SFT268
6000n
2N2341
350ktA
75Om0
TI3028
TI3027
TI-3028
2S52
NKT501
MP1560A
ti3029
ti3030
TRANSISTOR b1181
MP1535A
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Untitled
Abstract: No abstract text available
Text: Thl¡% HEWLETT i"UM PACKARD Fibre Channel Transceiver Chip Technical Data HDMP-1536A Transceiver HDMP-1546A Transceiver Features • ANSI X 3 .2 3 0-1994 Fibre Channel Compatible FC-0 • Supports Full Speed (1062.5 MBd) Fibre Channel • Compatible with “Fibre
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HDMP-1536A
HDMP-1546A
10-Bit
HDMP-1536A,
10x10
HDMP-1546A,
14x14
HDMP-1536/46A
HDMP-1536/46A.
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Untitled
Abstract: No abstract text available
Text: ¥h n * H EW LETT mLlíM P A C K A R D Fibre Channel Transceiver Chip Technical Data HDMP-1536 Transceiver HDMP-1546 Transceiver Features Description • ANSI X3.230-1994 Fibre Channel Compatible FC-0 • Supports FuU Speed (1062.5 MBd) Fibre Channel • Compatible w ith “Fibre
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HDMP-1536
HDMP-1546
10-Bit
10x10
HDMP-1546,
14x14
HDMP-1536/46
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