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    P1403EVG SOP8 Search Results

    P1403EVG SOP8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT1048R-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -16A 7Mohm Sop8 Visit Renesas Electronics Corporation
    HAT2038R-EL-E Renesas Electronics Corporation Nch Dual Power Mosfet 60V 5A 58Mohm Sop8 Visit Renesas Electronics Corporation
    UPA2754GR-E1-A Renesas Electronics Corporation Nch Dual Power Mosfet 30V 11A 14.5Mohm Power Sop8 Visit Renesas Electronics Corporation
    HAT2029R-EL-E Renesas Electronics Corporation Nch Dual Power Mosfet 28V 7.5A 33Mohm Sop8 Visit Renesas Electronics Corporation
    HAT2070R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 12A 14Mohm Sop8 Visit Renesas Electronics Corporation

    P1403EVG SOP8 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34411AA-N •概要 ■特長 ELM34411AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 14mΩ (Vgs=-10V) ・ Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N P1403EVG JAN-17-2006 ModeELM34411AA-N

    ELM34411AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34411AA-N •概要 ■特点 ELM34411AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-12A ·Rds on < 14mΩ (Vgs=-10V) ·Rds(on) < 22mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34411AA-N 4411AA-N P1403EVG JAN-17-2006 ELM34411AA

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N ELM34411AA-N Therm100 P1403EVG JAN-17-2006

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)


    Original     		PDF ELM34411AA-N ELM34411AA-N P1403EVG JAN-17-2006

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G