P120 TRANSISTOR Search Results

P120 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

P120 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UPD788005 Abstract: P120 TRANSISTOR Text: User’s Manual µPD788004A, 788005A, 788006A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply µPD788004A µPD788005A µPD788006A Document No. U17753EJ3V0UD00 3rd edition Date Published September 2006 NS CP(K) 2006 Printed in Japan	Original	PD788004A, 88005A, 88006A PD788004A PD788005A PD788006A U17753EJ3V0UD00 U17753EJ3V0UD UPD788005 P120 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: User’s Manual PD788004A, 788005A, 788006A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply μPD788004A μPD788005A μPD788006A Document No. U17753EJ2V0UD00 2nd edition Date Published February 2006 NS CP(K) 2006 Printed in Japan [MEMO]	Original	PD788004A, 88005A, 88006A PD788004A PD788005A PD788006A U17753EJ2V0UD00 U17753EJ2V0UD	PDF
2SC2838 Abstract: 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2838 APPLICATIONS ·For audio and general purpose applications	Original	2SA1187 -150V 2SC2838 -150V 2SC2838 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100	PDF
2SA1186 Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2SA1186 transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160	PDF
U12326E PD78F0103 Abstract: No abstract text available Text: User’s Manual PD788001A, 788002A, 78F8002A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply μPD788001A μPD788002A μPD78F8002A Document No. U17742EJ2V0UD00 2nd edition Date Published March 2006 NS CP(K) 2006 Printed in Japan [MEMO]	Original	PD788001A, 88002A, 78F8002A PD788001A PD788002A PD78F8002A U17742EJ2V0UD00 U17742EJ2V0UD U12326E PD78F0103	PDF
power transistor 2sc3856 Abstract: 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3856 APPLICATIONS ·For audio and general purpose applications	Original	2SA1492 -180V 2SC3856 power transistor 2sc3856 5060 transistor of transistor P100 2SA1492 TRANSISTOR P90 transistor 2sa1492 transistor p100 P120 TRANSISTOR Y130 Y140	PDF
2sA1186 transistor Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications	Original	2SA1186 -150V 2SC2837 2sA1186 transistor transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor	PDF
KI17 Abstract: 010B16 transistor p86 Text: Mitsubishi microcomputers M30221 Group Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30221 group of single-chip microcomputers are built using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core. The M30221 group has LCD controller/driver. M30221 group is	Original	M30221 16-BIT M16C/60 120-pin KI17 010B16 transistor p86	PDF
icm 7202 Abstract: uPD78F8004H uPD78F8005H uPD78F8006H 78F8006 uPD78F8006HGB NEC MCP 2000 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
uPD780111 Abstract: uPD788004A uPD788005A uPD788006A uPD788005AGB TOP267 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
uPD788001A Abstract: UPD788001 uPD78F80 Text: User’s Manual µPD788001A, 788002A, 78F8002A 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply µPD788001A µPD788002A µPD78F8002A Document No. U17742EJ3V0UD00 3rd edition Date Published September 2006 NS CP(K) 2006 Printed in Japan	Original	PD788001A, 88002A, 78F8002A PD788001A PD788002A PD78F8002A U17742EJ3V0UD00 U17742EJ3V0UD uPD788001A UPD788001 uPD78F80	PDF
U12326E PD78F0103 Abstract: uPD788001A kawasaki immobilizer 78F8002A uPD788002A uPD78F8002A icm 7202 mcp 2210 ic lin uart c code UPD788001 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: User’s Manual PD78F8004H, 78F8005H, 78F8006H 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply μPD78F8004H μPD78F8005H μPD78F8006H Document No. U17461EJ3V0UD00 3rd edition Date Published February 2006 NS CP(K) 2006 Printed in Japan	Original	PD78F8004H, 78F8005H, 78F8006H PD78F8004H PD78F8005H PD78F8006H U17461EJ3V0UD00 U17461EJ3V0UD	PDF
M30221 Abstract: KI17 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	M30221 KI17	PDF

TOP267 Abstract: bTI51 Text: User’s Manual µPD78F8004H, 78F8005H, 78F8006H 8-Bit Single-Chip Microcontroller With LIN Transceiver & Power Supply µPD78F8004H µPD78F8005H µPD78F8006H Document No. U17461EJ4V0UD00 4th edition Date Published September 2006 NS CP(K) 2006 Printed in Japan	Original	PD78F8004H, 78F8005H, 78F8006H PD78F8004H PD78F8005H PD78F8006H U17461EJ4V0UD00 U17461EJ4V0UD TOP267 bTI51	PDF
LENZE fault diagnostics Abstract: lenze esv lenze inverter manual book 1.5 kw TB13A LENZE drive manual ESV371N02SFC ESV751N06TXB ESV152N04TXB ESV152N04TFC ESV152N06TXB Text: SMVector - Frequency Inverter Operating Instructions SV01C Contents 1 Safety 2 Technical 2.1 Standards and Application	Original	SV01C LENZE fault diagnostics lenze esv lenze inverter manual book 1.5 kw TB13A LENZE drive manual ESV371N02SFC ESV751N06TXB ESV152N04TXB ESV152N04TFC ESV152N06TXB	PDF
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57	PDF
Untitled Abstract: No abstract text available Text: IQX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections The IQX family of SRAM-based bit-oriented switching devices is	Original	power5465056,	PDF
Untitled Abstract: No abstract text available Text: IQX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections The IQX family of SRAM-based bit-oriented switching devices is	Original		PDF
Untitled Abstract: No abstract text available Text: IQX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections The IQX family of SRAM-based bit-oriented switching devices is	Original	power734334,	PDF
transistor bl p68 Abstract: J955 w29 transistor XC4010XL PQ160 g41 p28 schematic diagram transistor bl p85 X675 634 p181 transistor bl p89 transistor BL P84 Text: XC4000E and XC4000X Series Field Programmable Gate Arrays R May 14, 1999 Version 1.6 0* XC4000E and XC4000X Series Features Note: Information in this data sheet covers the XC4000E, XC4000EX, and XC4000XL families. A separate data sheet covers the XC4000XLA and XC4000XV families. Electrical	Original	XC4000E XC4000X XC4000E, XC4000EX, XC4000XL XC4000XLA XC4000XV xc4000. transistor bl p68 J955 w29 transistor XC4010XL PQ160 g41 p28 schematic diagram transistor bl p85 X675 634 p181 transistor bl p89 transistor BL P84	PDF
tip15 Abstract: tip122 data tip12 Text: MOTOROLA Order this document by TI P120/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications. • • High DC C u rre n t G ain —	OCR Scan	P120/D 21A-06 O-220AB tip15 tip122 data tip12	PDF
T1P126 Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp Text: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage	OCR Scan	TIP120 TIP125 O-220 T1P126 transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp	PDF
DI200 Abstract: 200a liu 1DI200ZP-120 M114 T151 T460 B327 Text: 1DI200ZR-120 200A s < r j- : Outline Drawings U PO W ER TRANSISTOR MODULE • # J i : : Features • hFE*'“^ ' High DC Current Gain • Ettttffifcft : Applications • 'ARM >'<—9 • •N General Purpose Inverter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools	OCR Scan	1DI200ZP-120Ã 26-36kg E82988 19S24% I95t/R89) Shl50 DI200 200a liu 1DI200ZP-120 M114 T151 T460 B327	PDF

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P120 TRANSISTOR Search Results

P120 TRANSISTOR Result Highlights (5)

P120 TRANSISTOR Datasheets Context Search

UPD788005

Untitled

2SC2838

2SA1186

U12326E PD78F0103

power transistor 2sc3856

2sA1186 transistor

KI17

icm 7202

uPD780111

uPD788001A

U12326E PD78F0103

Untitled

M30221

TOP267

LENZE fault diagnostics

transistor p98

Untitled

Untitled

Untitled

transistor bl p68

tip15

T1P126

DI200