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    P10N1 Search Results

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    P10N1 Price and Stock

    Rochester Electronics LLC RFP10N12L

    N-CHANNEL POWER MOSFET
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    DigiKey RFP10N12L Bulk 54,904 258
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    Rochester Electronics LLC RFP10N15L

    N-CHANNEL POWER MOSFET
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    DigiKey RFP10N15L Bulk 20,421 342
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    STMicroelectronics STP10N105K5

    MOSFET N-CH 1050V 6A TO220
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    DigiKey STP10N105K5 Tube 917 1
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    Mouser Electronics STP10N105K5 988
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    Newark STP10N105K5 Bulk 1,000
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    STMicroelectronics STP10N105K5 988 1
    • 1 $3.38
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    TME STP10N105K5 1
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    Avnet Silica STP10N105K5 950 15 Weeks 50
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    Chip1Stop STP10N105K5 Tube 895
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    EBV Elektronik STP10N105K5 15 Weeks 50
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    Infineon Technologies AG SPP10N10

    MOSFET N-CH 100V 10.3A TO220-3
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    DigiKey SPP10N10 Tube 500
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    Avnet Americas SPP10N10 Tube 4 Weeks 1
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    Rochester Electronics SPP10N10 10 1
    • 1 $0.4083
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    • 100 $0.3838
    • 1000 $0.3471
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    Infineon Technologies AG SPP10N10L

    MOSFET N-CH 100V 10.3A TO220-3
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    DigiKey SPP10N10L Tube 500
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    Find more P10N1 price and stock on Findchips.com

    P10N1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P10N15A Pletronics Electromechanical Filter 10.7 MHz BPF, 1.5 dB IL, 0.5 dB Inband ripple Original PDF
    P10N15B Pletronics Electromechanical Filter 10.7 MHz BPF, 2 dB IL, 1 dB Inband ripple Original PDF

    P10N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "Crystal Filter"

    Abstract: A3X2
    Text: PLETRONICS 10.7 MHz MONOLITHIC CRYSTAL FILTER SERIES PLETRONICS 10.7 MHz MONOLITHIC CRYSTAL FILTER SERIES Package Outlines Part# Click to Order Channel Spacing Passband # of poles Stopband dB kHz dB kHz dB kHz Ripple Loss Terminating Impedance dB dB Ω //pF//pF


    Original     		PDF P10M8A P10M8B P10M8D P10M8E P10M30D P10N15A com/10MHZ P10N15B 19013-36th "Crystal Filter" A3X2

    p channel de mosfet

    Abstract: No abstract text available
    Text: Basic; TMOS Characteristics Avalanche Energy T h e E -F E T series of po w e r M O SFETs are ruggedized de vice s that can w ith sta n d the stresses of d ra in -to -source ove rvolta ge transients. T hese d e vice s carry w ith them an en erg y rating. T heir energy handling ca p a b ility is c h a ra cte r­


    OCR Scan     		PDF P10N1 O-220 O-218 T0-204 O-247 p channel de mosfet