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    P093A Search Results

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    P093A Price and Stock

    AirBorn Inc MM-212-025-143-JP00-93A

    D-Sub MIL Spec Connectors Microminiature Series .050
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MM-212-025-143-JP00-93A
    • 1 $377.23
    • 10 $344.56
    • 100 $344.56
    • 1000 $344.56
    • 10000 $344.56
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    AirBorn Inc MM-212-021-143-JP00-93A

    D-Sub MIL Spec Connectors Microminiature Series .050
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MM-212-021-143-JP00-93A
    • 1 $362.31
    • 10 $330.93
    • 100 $330.93
    • 1000 $330.93
    • 10000 $330.93
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    AirBorn Inc MM-212-037-143-JP00-93A

    D-Sub MIL Spec Connectors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MM-212-037-143-JP00-93A
    • 1 $422.08
    • 10 $385.53
    • 100 $385.53
    • 1000 $385.53
    • 10000 $385.53
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    P093A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o ) r


    Original     		PDF ESM6045AV

    P093A

    Abstract: STE50DE100
    Text: STE50DE100 1000 V - 50 A - 25 mΩ POWER MODULE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION ULTRA LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V ULTRA LOW CISS DRIVEN BY RG = 56Ω


    Original     		PDF STE50DE100 P093A STE50DE100

    BUV98AV

    Abstract: No abstract text available
    Text: BUV98AV NPN TRANSISTOR POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o


    Original     		PDF BUV98AV BUV98AV

    schematic diagram motor control

    Abstract: schematic diagram motor BUV298V JESD97
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC schematic diagram motor control schematic diagram motor BUV298V JESD97

    ST 358

    Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
    Text: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance


    Original     		PDF STE70IE120 STE70DE120 E70IE120 ST 358 isotop bipolar JESD97 STE70IE120 E70IE120

    ESM6045DV

    Abstract: No abstract text available
    Text: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM6045DV ESM6045DV

    ESM6045DV

    Abstract: No abstract text available
    Text: ESM6045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM6045DV ESM6045DV

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    E07DE220

    Abstract: JESD97 STE07DE220 FAST-SWITCH
    Text: STE07DE220 Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. VCS ON IC RCS(ON) 0.5V 7A 0.07 Ω • High voltage / high current cascode configuration ■ Ultra low equivalent on resistance


    Original     		PDF STE07DE220 STE07DE220 E07DE220 JESD97 FAST-SWITCH

    Untitled

    Abstract: No abstract text available
    Text: ESM5045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM5045DV

    ESM3045DV

    Abstract: No abstract text available
    Text: ESM3045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM3045DV ESM3045DV

    JESD97

    Abstract: STE50DE100
    Text: STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT 1000 V - 50 A - 0.026 Ω General features VCS ON IC 1.3 V 50 A RCS(ON) 0.026 • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz


    Original     		PDF STE50DE100 STE50DE100 JESD97

    ESM4045DV

    Abstract: No abstract text available
    Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM4045DV ESM4045DV

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    SMPS IC 2003

    Abstract: BUT232V DSA0047212 BUT23
    Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUT232V SMPS IC 2003 BUT232V DSA0047212 BUT23

    BUV298AV

    Abstract: No abstract text available
    Text: BUV298AV  NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS INSULATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF BUV298AV BUV298AV

    Untitled

    Abstract: No abstract text available
    Text: BUV298V NPN transistor power module General features • NPN Transistor ■ High current power bipolar module ■ Very low Rth junction case ■ Specific accidental overload areas ■ Fully insulated package U.L. compliant for easy mounting ■ Low internal parasitic inductance


    Original     		PDF BUV298V 2002/93/EC

    Untitled

    Abstract: No abstract text available
    Text: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF BUT30V

    Untitled

    Abstract: No abstract text available
    Text: BUF460AV NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF BUF460AV

    industrial welding diagram

    Abstract: No abstract text available
    Text: STE50DE100 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.025 Ω POWER MODULE PRELIMINARY DATA • ■ ■ ■ V CS ON IC R CS(ON) 1V 40 A 0.025 Ω LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1000 V


    Original     		PDF STE50DE100 STE50DE100 industrial welding diagram

    ESM5045DV

    Abstract: SCHEMATIC smps
    Text: ESM5045DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE •


    Original     		PDF ESM5045DV ESM5045DV SCHEMATIC smps

    ESM2030DV

    Abstract: No abstract text available
    Text: ESM2030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF ESM2030DV ESM2030DV

    BUT23

    Abstract: No abstract text available
    Text: BUT232V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE ) s ( ct


    Original     		PDF BUT232V BUT23

    Untitled

    Abstract: No abstract text available
    Text: BUV98V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS


    Original     		PDF BUV98V