characteristics of zener diode in reverse bias
Abstract: VRRM VRSM VBR pn junction full wave bridge rectifier
Text: Symbols SYMBOLS According IEC 147 and IEC 747-2 Cd, Diode Capacitance Total capacitance between the diode terminals due to case, junction and parasitic capacitance. Cj, Junction Capacitance Capacitance due to a p-n junction of the diode. It decreases with increasing reverse voltage.
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Rf detector HSMS 8202
Abstract: Waveform Clipping With Schottky schottky diode hsms8202 HSMP-2810 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B
Text: Applications Information Schottky Diode Fundamentals The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped or p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the
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thisT-143
HSMS-2800
HSMS-2802
HSMS-2803
HSMS-2804
HSMP-2810
HSMS-2812
HSMS-2813
HSMS-2814
HSMS-2820
Rf detector HSMS 8202
Waveform Clipping With Schottky
schottky diode hsms8202
A7 diode schottky
HSMP 2800
hsms2827
SCHOTTKY CROSS REFERENCE
very high current schottky diode
HSMP-281B
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pn junction diode structure
Abstract: PIN diode
Text: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.
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Abstract: No abstract text available
Text: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5116
com/2n5116
2N5116
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2N3993
Abstract: 1450 transistor
Text: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N3993
com/2n3993
2N3993
1450 transistor
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Untitled
Abstract: No abstract text available
Text: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5115
com/2n5115
2N5115
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2n5460
Abstract: No abstract text available
Text: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r
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2N5460
com/2n5460
2N5460
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Emcore solar cell
Abstract: EMCORE CIC ATJ 1e15 triple-junction "solar cell" 1E14 solar cell 121E-15 5E14
Text: | APRIL PRODUCT BRIEF 2005 | MONTH PRODUCT BRIEF 2003 PRODUCT BRIEF | APRIL 2005 Advanced Triple-Junction With Monolithic Diode ATJM High-Efficiency Solar Cells for Space Applications 27.0% Minimum Average Efficiency Features and Characteristics Advanced Triple-Junction (ATJ) InGaP/InGaAs/Ge Solar Cells with n-on-p polarity on 140-µm Uniform
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Abstract: No abstract text available
Text: MAX6654 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface General Description The MAX6654 is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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MAX6654
MAX6654
2N3904
2N3906
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MAX6654
Abstract: 2N3904 2N3906 CMPT3904 KST3904-TF MAX6654MEE SMBT3904 SST3904
Text: 19-1836; Rev 2; 1/02 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
MAX6654
MAX6654
CMPT3904
KST3904-TF
MAX6654MEE
SMBT3904
SST3904
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Untitled
Abstract: No abstract text available
Text: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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MAX6654
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2N3904
Abstract: 2N3906 CMPT3904 E16-1 KST3904-TF MAX6654 MAX6654MEE SST3904 500-32BT02-000 samsung emi* filter
Text: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
MAX6654
CMPT3904
E16-1
KST3904-TF
MAX6654
MAX6654MEE
SST3904
500-32BT02-000
samsung emi* filter
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Untitled
Abstract: No abstract text available
Text: 19-1836; Rev 2; 1/02 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
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Untitled
Abstract: No abstract text available
Text: 19-2190; Rev 1; 5/06 2°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted
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2N3904
2N3906
21-0055F
MAX6690MEE-T
MAX6690MEE+
MAX6690MEE
MAX6690YMEE+
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HYPERABRUPT
Abstract: No abstract text available
Text: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.
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2SC1254
Abstract: No abstract text available
Text: LED Structure, Characteristics and Operation LED BASIC STRUCTURE CHARACTERISTICS • The LED light em itting diode chip has an internal P-N junction, and an electrode is provided on each surface of the chip to make ohmic contact. The P-N junction is formed
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EIAJ-SD121
IL-STD-750C
JIS-C7021
2SC1254
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2SC1254
Abstract: JIS C7021 B-11 led Concave RS510
Text: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by
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C7021
90-degree
JIS-C7021
2SC1254
JIS C7021 B-11
led Concave
RS510
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BFR101A
Abstract: BFR101 BFR101B
Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source
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bb53T31
251ciÃ
BFR101A
BFR101B
BFR101
BFR101A
BFR101B
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HL7801
Abstract: HL7806
Text: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).
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AVERAGE QUASI PEAK AND PEAK DETECTOR
Abstract: nixie tube circuit
Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction
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7.1 Channel audio amplifier
Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_
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BFW13
BFW12
BFW11
BFW10
BF245A
BF245B
BF245C
BF256A
BF256B
BF545A
7.1 Channel audio amplifier
amplifier
audio
BFT46
BF861A
n channel audio
BF410C
BF512
transistors BFW10
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Untitled
Abstract: No abstract text available
Text: •I bbS3T31 0024342 762 W A P X N AUER PHI LIPS/DISCRETE BAT54A; C; S b7E D yv SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting.
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bbS3T31
BAT54A;
OT-23
UBB175
BAT54A
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Untitled
Abstract: No abstract text available
Text: • bb53T31 00EH3i»7 2b4 * A P X N AflER PHILIPS/DISCRETE BAT74 b7E » J V SCHOTTKY BARRIER DIODE Two separate silicon epitaxial Schottky barrier diodes with an integrated p-n junction protection ring in one microminiature SOT-143 envelope, intended for surface mounting SMD technology .
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bb53T31
00EH3iÂ
BAT74
OT-143
bbS3131
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DIODE AA 119
Abstract: No abstract text available
Text: a n A M P co m p a n y GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features Case Styles • • • • Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product - Packaged Diodes - Chips
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MA40400
DIODE AA 119
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