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    P-CHANNEL SC89 Search Results

    P-CHANNEL SC89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL SC89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		PDF Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		PDF Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-89

    Abstract: Si1016X
    Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400


    Original     		PDF Si1016X 08-Apr-05 SC-89

    SC-89

    Abstract: Si1029X
    Text: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES


    Original     		PDF Si1029X 08-Apr-05 SC-89

    SC-89

    Abstract: Si1016X
    Text: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400


    Original     		PDF Si1016X S-03104--Rev. 08-Feb-01 SC-89

    SC-89

    Abstract: Si1029X
    Text: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES


    Original     		PDF Si1029X S-03518--Rev. 11-Apr-01 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC OT-563 SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SC-89

    Abstract: Si1016X
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89

    SI1016X

    Abstract: transistor 2432
    Text: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400


    Original     		PDF Si1016X 2002/95/EC OT-563 SC-89 18-Jul-08 transistor 2432

    SPP1013

    Abstract: SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB
    Text: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPP1013 SPP1013 -20V/0 SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB

    SI1016CX

    Abstract: sot-563 MOSFET D1 SI-101
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		PDF Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 08-Apr-05 SC-89

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		PDF Si1016CX 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		PDF Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MARKING 4A sot-563

    Abstract: P-channel Dual MOSFET VGS -25V 035a lcd
    Text: SPP1023 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1023 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		PDF SPP1023 SPP1023 MARKING 4A sot-563 P-channel Dual MOSFET VGS -25V 035a lcd

    "MARKING CODE M"

    Abstract: SC-89 Si1035X
    Text: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V


    Original     		PDF Si1035X S-03201--Rev. 12-Mar-01 "MARKING CODE M" SC-89

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		PDF Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI1029X-T1GE3

    Abstract: SC-89 Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 18-Jul-08 SI1029X-T1GE3 SC-89

    si1029x

    Abstract: No abstract text available
    Text: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V


    OCR Scan     		PDF Si1029X S-03518-- 11-Apr-01 SM029X S-03518--Rev. 11-Apr-01

    7130-1 transistor

    Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
    Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200


    OCR Scan     		PDF SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X