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    P-CHANNEL POWER MOSFET 10A Search Results

    P-CHANNEL POWER MOSFET 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0412JSP-00#J0 Renesas Electronics Corporation 40 V - 10A - N Channel MOS FET Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL POWER MOSFET 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3310 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT3310 is a P-channel enhancement mode Power MOSFET. The UTC UT3310 uses advanced technology to provide customers with fast switching, low on-resistance and


    Original     		PDF UT3310 UT3310 UT3310G-TN3-R O-252 QW-R502-388 UT33t

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced


    Original     		PDF UTT30P04 UTT30P04 O-252 UTT30P04L-TN3-R UTT30P04G-TN3-R QW-R502-613

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device design, low on-resistance and cost-effectiveness with UTC’s


    Original     		PDF UT30P04 UT30P04 O-252 UT30P04L-TN3-R UT30P04G-TN3-R QW-R502-465

    613 MOSFET

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced


    Original     		PDF UTT30P04 UTT30P04 O-252 UTT30P04L-TN3-R UTT30P04G-TN3-R QW-R502-613 613 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low


    Original     		PDF UTT4407 UTT4407 UTT4407L-S08-R UTT4407G-S08-R UTT4407L-S08-T UTT4407G-S08-T QW-R502-554

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF UF9Z34 UF9Z34 O-220 UF9Z34L-TA3-T UF9Z34G-TA3-T QW-R502-843

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		PDF UF640-P 18OHM, UF640-P O-220 QW-R502-A17

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT36P03 Power MOSFET -30V, -36A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT36P03 is a P-channel Power MOSFET, using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also


    Original     		PDF UTT36P03 UTT36P03 UTT36P03L-TN3-R UTT36P03G-TN3-R O-252 QW-R502-775

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT30P04 Preliminary Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR „ DESCRIPTION The UTC UT30P04 is a P-channel enhancement mode Power MOSFET, providing customers fast switching, ruggedized device


    Original     		PDF UT30P04 UT30P04 UT30P04G-TN3-R O-252 QW-R502-465

    P-channel N-Channel power mosfet SO-8

    Abstract: IRF7350PBF IRF7350
    Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V


    Original     		PDF IRF7350PbF -100V EIA-481 EIA-541. P-channel N-Channel power mosfet SO-8 IRF7350PBF IRF7350

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF9150 -100V, -100V

    Untitled

    Abstract: No abstract text available
    Text: 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM3804, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		PDF GSM3804, -40V/-10A O-252-2L GSM3804DF Lane11

    IRFP9150

    Abstract: IRFP150 IRFP9151 application notes irfp150
    Text: IRFP9150 Data Sheet January 2002 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET Features • 25A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9150 IRFP9150 IRFP150. IRFP150 IRFP9151 application notes irfp150

    application notes irfp150

    Abstract: P-CHANNEL 25A TO-247 POWER MOSFET irfp9150
    Text: IRFP9150 Data Sheet August 1999 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor


    Original     		PDF IRFP9150 IRFP9150 IRFP150. TA49230. application notes irfp150 P-CHANNEL 25A TO-247 POWER MOSFET

    IRF9150

    Abstract: No abstract text available
    Text: IRF9150 Data Sheet February 1999 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF9150 -100V, -100V IRF9150

    OM12P10SA

    Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
    Text: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •


    Original     		PDF OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM2P50ST OM8P25SA

    RD10

    Abstract: AAT8303 AAT8303ITS-T1
    Text: AAT8303 20V P-Channel Power MOSFET General Description Features The AAT8303 is a low threshold P Channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's proprietary ultrahigh density Trench technology, and space saving


    Original     		PDF AAT8303 AAT8303 RD10 AAT8303ITS-T1

    p-CHANNEL POWER MOSFET 600v

    Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
    Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take


    Original     		PDF -600v -150V p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P

    IRFP9140

    Abstract: mosfet motor speed drive T0-247 TA17521
    Text: IRFP9140 Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET Features • 19A, 100V This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    Original     		PDF IRFP9140 TA17521. IRFP9140 mosfet motor speed drive T0-247 TA17521

    RFM10P12

    Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
    Text: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF RFP10P15 -150V, -150V TA9404. RFM10P12 RFM10P15 TA940 RFP10P12 RFP10P15 TB334

    IRFP9140

    Abstract: T0-247 TA17521
    Text: IRFP9140 Data Sheet July 1999 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor


    Original     		PDF IRFP9140 IRFP9140 T0-247 TA17521

    4505ss

    Abstract: A1770 24V 1A mosfet
    Text: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C439Q8 MTC4505Q8 MTC4505Q8 UL94V-0 4505ss A1770 24V 1A mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


    OCR Scan     		PDF IRFP9140 -100V, O-247 -100V 200i2