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    P-CHANNEL MOSFET CODE 1A Search Results

    P-CHANNEL MOSFET CODE 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET CODE 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec

    H9435S

    Abstract: diode marking 91a marking CODE 91A h4435 91A MARKING
    Text: HI-SINCERITY Spec. No. : MOS200101 Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 MICROELECTRONICS CORP. H4435S • P-Channel Enhancement-Mode MOSFET -30V, -9.1A) 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features


    Original     		PDF MOS200101) H4435S H4435S 183oC 217oC 260oC 245oC H9435S diode marking 91a marking CODE 91A h4435 91A MARKING

    H9435S

    Abstract: SO-8 V 052
    Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2010.07.08 Page No. : 1/5 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment


    Original     		PDF MOS200509( H9435S/H9435DS H9435S H9435DS 217oC 260oC 245oC H9435S H9435DS SO-8 V 052

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features


    Original     		PDF MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2008.12.04 Page No. : 1/4 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment


    Original     		PDF MOS200509( H9435S/H9435DS H9435S H9435DS 183oC 217oC 260oC 245oC H9435S H9435DS

    H2301N

    Abstract: ultra low idss code 619 sot-23
    Text: HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 1/4 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol 3 P-Channel Enhancement-Mode MOSFET -20V, -2.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200612 H2301N H2301N OT-23 183oC 217oC 260oC 10sec ultra low idss code 619 sot-23

    H2305

    Abstract: MOSFET 20V 45A mark tp sot23
    Text: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec H2305 MOSFET 20V 45A mark tp sot23

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec

    si2301

    Abstract: Si2301ADS SI2301ADS SI2301DS SI2301DS 71-835 1a marking
    Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301ADS O-236 OT-23) Si2301DS 18-Jul-08 si2301 SI2301ADS SI2301DS 71-835 1a marking

    SI2301ADS SI2301DS

    Abstract: 71-835 SI2301DS Si2301ADS tjm sot23 1A marking 1A MARKING CODE
    Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301ADS O-236 OT-23) Si2301DS S-20617--Rev. 29-Apr-02 SI2301ADS SI2301DS 71-835 tjm sot23 1A marking 1A MARKING CODE

    si2301ads

    Abstract: No abstract text available
    Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301ADS O-236 OT-23) Si2301DS 08-Apr-05

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 18-Jul-08 Si1303DL

    MARKING CODE LB

    Abstract: SI1305DL
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


    Original     		PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 MARKING CODE LB

    S-63639

    Abstract: S-63639-Rev SI1303DL
    Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code


    Original     		PDF Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 S-63639-Rev

    Si1307EDL

    Abstract: Si1307DL
    Text: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code


    Original     		PDF Si1307EDL OT-323 SC-70 18-Jul-08 Si1307DL

    Si1303DL

    Abstract: S-63639
    Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code


    Original     		PDF Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639

    Si1305DL

    Abstract: Tr431
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 09-Nov-99 Si1303DL

    Si1305DL

    Abstract: No abstract text available
    Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code


    Original     		PDF Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 08-Apr-05 Si1303DL

    Si1305DL

    Abstract: ams330
    Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code


    Original     		PDF Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330

    P-Channel 1.8-V (G-S) MOSFET sot-323

    Abstract: Si1307EDL Si1307DL
    Text: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code


    Original     		PDF Si1307EDL OT-323 SC-70 08-Apr-05 P-Channel 1.8-V (G-S) MOSFET sot-323 Si1307DL

    SI1307EDL

    Abstract: No abstract text available
    Text: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code


    Original     		PDF Si1307EDL OT-323 SC-70 10-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: TS2026 1A Dual Channel USB High-Side Power Switch SOP-8 Pin Definition: 1. CTLA 8. OUTA 2. FLGA 7. IN 3. FLGB 6. GND 4. CTLB 5. OUTB General Description The TS2026 is integrated 90mΩ high-side power switch for self-powered and bus-powered Universal Serial Bus


    Original     		PDF TS2026 TS2026