VEC2605
Abstract: No abstract text available
Text: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance
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VEC2605
ENN8197
VEC2605
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MCH3314
Abstract: SCH2805
Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
MCH3314
SCH2805
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MCH6644
Abstract: marking WU
Text: MCH6644 Ordering number : ENN8959 N-Channel and P-Channel Silicon MOSFETs MCH6644 General-Purpose Switching Device Applications Features • • • • The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET thereby enabling high-density mounting.
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MCH6644
ENN8959
MCH6644
marking WU
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CPH3309
Abstract: CPH5835 MCH5835 SBS010M
Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained
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CPH5835
ENN8207
CPH3309)
SBS010M)
CPH3309
CPH5835
MCH5835
SBS010M
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MCH3339
Abstract: MCH5823 SS10015M
Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)
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MCH5823
ENN7757
MCH3339)
SS10015M)
MCH3339
MCH5823
SS10015M
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marking Fn
Abstract: No abstract text available
Text: MCH6614 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.
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MCH6614
900mm2
000121TM2fXHD
100mA
000120TM2fXHD
marking Fn
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MOSFET IGSS 100uA
Abstract: No abstract text available
Text: MCH6615 N- Channel and P-Channel Silicon MOSFET Very High-Speed Switching Applications Features TENTATIVE •Composite type with a low on-resistance, very high-speed switching, N-channel and P-channel MOSFET facilitating high-density mounting. •Low On-state resistance.
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MCH6615
900mm2
000121TM2fXHD
150mA
100mA
000120TM2fXHD
MOSFET IGSS 100uA
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W359
Abstract: FW359 75493
Text: Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching,
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ENN7549
FW359
FW359
FW359]
W359
75493
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ENN8206
Abstract: CPH5810 MCH3312
Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)
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CPH5810
ENN8206
MCH3312)
SBS001)
ENN8206
CPH5810
MCH3312
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EMH2603
Abstract: No abstract text available
Text: EMH2603 Ordering number : ENA0657 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 General-Purpose Switching Device Applications Features • • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2603
ENA0657
EMH2603
A0657-7/7
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MCH6634
Abstract: No abstract text available
Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance
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MCH6634
EN8229A
MCH6634
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Untitled
Abstract: No abstract text available
Text: EMH2602 Ordering number : EN8732 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2602
EN8732
EMH2602
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Untitled
Abstract: No abstract text available
Text: FW340 Ordering number : ENA0424 N-Channel and P-Channel Silicon MOSFETs FW340 General-Purpose Switching Device Applications Features • • • For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
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ENA0424
FW340
PW10s)
PW100ms)
2000mm2
A0424-6/6
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7447
Abstract: CPH5818 MCH3339 SBS007M
Text: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171
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ENN7447
CPH5818
MCH3339)
SBS007M)
CPH5818]
7447
CPH5818
MCH3339
SBS007M
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EMH2601
Abstract: EN8731 it10408
Text: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2601
EN8731
EMH2601
EN8731
it10408
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w342
Abstract: FW342 7912 features D2004 ENN7912
Text: FW342 Ordering number : ENN7912 N-Channel and P-Channel Silicon MOSFETs FW342 General-Purpose Switching Device Applications Features • • • For motor drives, inverters. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
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FW342
ENN7912
PW10s)
PW100ms)
w342
FW342
7912 features
D2004
ENN7912
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W360
Abstract: FW360
Text: Ordering number : ENN7556 FW360 N-Channel and P-Channel Silicon MOSFETs FW360 Ultrahigh-Speed Switching, Motor Driver Applications Preliminary Features • The FW360 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129
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ENN7556
FW360
FW360
FW360]
W360
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ECH8620
Abstract: No abstract text available
Text: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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ECH8620
ENA0659
ECH8620
A0659-6/6
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EMH2602
Abstract: No abstract text available
Text: EMH2602 Ordering number : EN8732A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 General-Purpose Switching Device Applications Features • • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
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EMH2602
EN8732A
EMH2602
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w905
Abstract: FW905
Text: FW905 Ordering number : EN8754 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage
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FW905
EN8754
w905
FW905
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86886
Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)
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CPH5846
EN8688
MCH3309)
SS10015M)
86886
diode sy 710
mch5846
CPH5846
MCH3309
SS10015M
ss-1001
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7447
Abstract: CPH5818 MCH3339 SBS007M
Text: Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3339 and a Schottky Barrier Diode (SBS007M) 2171
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ENN7447
CPH5818
MCH3339)
SBS007M)
CPH5818]
7447
CPH5818
MCH3339
SBS007M
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diode N1004
Abstract: N1004 diode CPH5812 n1004 TA-3787 MCH3317 SBS010M N2603
Text: CPH5812 Ordering number : EN7467B SANYO Semiconductors DATA SHEET CPH5812 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications Features • Composite type with a P-Channel Sillicon MOSFET MCH3317 and a Schottky Barrier Diode (SBS010M)
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CPH5812
EN7467B
MCH3317)
SBS010M)
diode N1004
N1004 diode
CPH5812
n1004
TA-3787
MCH3317
SBS010M
N2603
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CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
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OCR Scan
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ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
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