100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
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OCR Scan
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IRFU9110,
IRFR9110
IRFU9120,
IRFR9120
IRFR9220,
IRFU9220
RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD15P05,
100V 60A Mosfet
50V 60A MOSFET
P-Channel 200V MOSFET
MOSFET ESD Rated
P-Channel
451 MOSFET
Pchannel
15a 50v p-channel mosfet
P-Channel 60V MOSFET
P-Channel Enhancement-Mode
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PDF
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IRF95
Abstract: IRF9510 p channel mosfet 100v TA17541
Text: [ /Title IRF95 10 /Subject (3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, P-Channel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark IRF9510 Data Sheet July 1999 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
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IRF95
O220AB
IRF9510
IRF95
IRF9510
p channel mosfet 100v
TA17541
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p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851
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OCR Scan
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2N6804
2N6849
2N6851
2N6895
2N6896
2N6897
2N6898
IRF9130,
IRF9131,
IRF9132,
p12p10
IRF9530* p-channel power MOSFET
Power MOSFETs
Field-Effect Transistors
IRFP9140/P9141
irf9640 mosfet
IRF9530 P-channel power
p-channel
irfp9240
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PDF
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IRFG5110
Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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OCR Scan
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IRFG5110
IRFG5110
9437B
PN channel MOSFET 10A
tp 26c
437B
MO-036AB
KJJ 15
X1DV
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PDF
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9437B
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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OCR Scan
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IRFG5110
IRFG5110
I-222
9437B
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PDF
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IRF7319
Abstract: 49AA
Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch
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OCR Scan
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IRF7319
IRF7319
49AA
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PDF
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372C
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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PDF
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P-channel N-Channel power mosfet SO-8
Abstract: IRF7350PBF IRF7350
Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V
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Original
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IRF7350PbF
-100V
EIA-481
EIA-541.
P-channel N-Channel power mosfet SO-8
IRF7350PBF
IRF7350
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PDF
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to-247 to-220 to-3p
Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Text: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective
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-100V
-500V
IXTA52P10P
FQB34P10
IXTA52P10P
-100V,
O-263
to-247 to-220 to-3p
IXTA36P15P
IXTN40P50P
IXTQ52P10P
sot-227 footprint
IXTA10P50P
ixtq
IXTH10P50
IXTH10P50P
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9530, RF1S9530SM Semiconductor A p ril 1999 D ata S h eet -12A, -100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF9530,
RF1S9530SM
-100V,
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PDF
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IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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Original
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94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
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PDF
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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Original
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4372A
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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PDF
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DSAS 13-0
Abstract: d92 02 a9hv
Text: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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Original
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IRFR9024
DSAS 13-0
d92 02
a9hv
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PDF
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TC227
Abstract: No abstract text available
Text: [ /Title IRFR9 220, IRFU92 20 /Subject (3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO251AA, TO252AA) /Creator () /DOCI IRFR9220, IRFU9220 Semiconductor 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
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Original
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IRFR9220,
IRFU9220
TA17502.
TC227
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PDF
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|
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IRFR9024
Abstract: No abstract text available
Text: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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IRFR9024*
IRFR9024
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International
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OCR Scan
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IRFG5110
IRFG5110
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PDF
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p-CHANNEL POWER MOSFET 600v
Abstract: IXTH20P50P IXTP28P065T 014 IR MOSFET Transistor P channel MOSFET 10A ixtq IXTA36P15P IXTA76P10T IXTH16P60P IXTK32P60P
Text: NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET portfolio with the introduction of two advanced new families; TrenchPTM and PolarPTM. These families take
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Original
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-600v
-150V
p-CHANNEL POWER MOSFET 600v
IXTH20P50P
IXTP28P065T
014 IR MOSFET Transistor
P channel MOSFET 10A
ixtq
IXTA36P15P
IXTA76P10T
IXTH16P60P
IXTK32P60P
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PDF
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IRLML6402TRPBF
Abstract: IRF7404TRPB TSSOP-6 IRLML6302TRPBF IRF7240TRPBF IRLML6401TRPBF TSSOP6 package IRFR5305PBF IRF5210STRLPBF irf7416trpbf
Text: 1964-2012:QuarkCatalogTempNew 9/18/12 3:26 PM Page 1964 Power MOSFETs Power MOSFETs, P Channel RoHS SO-8 D2-PAK TSSOP-6 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 AUTOMATION & CONTROL POWER TO-220AB I-PAK P Channel, –40 Volt VDSS P Channel, –12 Volt VDSS
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Original
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O-220AB
O-247AC
IRLML6401TRPBF
IRF7329PBF*
IRF7329TRPBF
IRF7420PBF
IRF7410PBF
IRF7410TRPBF
IRF7220PBF
IRF7220TRPBF
IRLML6402TRPBF
IRF7404TRPB
TSSOP-6
IRLML6302TRPBF
IRF7240TRPBF
TSSOP6 package
IRFR5305PBF
IRF5210STRLPBF
irf7416trpbf
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PDF
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IRF9530 mosfet
Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Text: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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Original
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IRF9530,
RF1S9530SM
IRF95
530SM
IRF9530 mosfet
IRF9530
RF1S9530
RF1S9530SM
RF1S9530SM9A
TB334
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PDF
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IRFF9120
Abstract: No abstract text available
Text: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,
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Original
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IRFF9120
TA17501.
O-205AF
IRFF9120
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF9630,
RF1S9630SM
-200V,
-200V
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PDF
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IRFF9130
Abstract: No abstract text available
Text: IRFF9130 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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Original
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IRFF9130
O205AF)
11-Oct-02
IRFF9130
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PDF
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IRFF9024
Abstract: No abstract text available
Text: IRFF9024 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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Original
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IRFF9024
O205AF)
11-Oct-02
IRFF9024
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PDF
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IRFF9230
Abstract: No abstract text available
Text: IRFF9230 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.
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Original
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IRFF9230
O205AF)
11-Oct-02
IRFF9230
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PDF
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