mosfet power totem pole CIRCUIT
Abstract: IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET
Text: Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs. 1 2. Grounded Loads . 1
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AN-940
mosfet power totem pole CIRCUIT
IR 948
AN-940 mosfet
HEXFET Power MOSFET P-Channel
hexfet power mosfets international rectifier
IR P-Channel mosfet
IR power mosfet switching power supply
P-Channel HEXFET Power MOSFET
HEXFET Characteristics
HEXFET Power MOSFET
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smd diode 77a
Abstract: p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE
Text: IC IC SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit
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KRF7317
-100A/
smd diode 77a
p-channel mosfet
78 DIODE SMD
KRF7317
77A DIODE
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IRF P-Channel FET 100v
Abstract: HEXFETs FETs 100v 23A P-Channel MOSFET IRF P CHANNEL MOSFET 10A 100V IRHQ6110 IRHQ63110
Text: PD - 91781 IRHQ6110 IRHQ63110 COMBINATION N AND P CHANNEL 2 EACH MEGA RAD HARD HEXFET TRANSISTORS Ω (N channel ) MEGA RAD HARD HEXFET 100 Volt, 0.38Ω Ω (P channel ) RAD HARD HEXFET and -100 Volt, 0.88Ω International Rectifier’s MEGA RADHARD Technology
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IRHQ6110
IRHQ63110
3x105
to1x105
IRF P-Channel FET 100v
HEXFETs FETs
100v 23A P-Channel MOSFET
IRF P CHANNEL MOSFET 10A 100V
IRHQ6110
IRHQ63110
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 55 -55 V ID 4.7
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KRF7343
-100A/
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372C
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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P-channel N-Channel power mosfet SO-8
Abstract: IRF7350PBF IRF7350
Text: PD - 95367 IRF7350PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 100V
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IRF7350PbF
-100V
EIA-481
EIA-541.
P-channel N-Channel power mosfet SO-8
IRF7350PBF
IRF7350
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IRF7338
Abstract: MOSFET N-CHANNEL 60v 60A
Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET
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94372B
IRF7338
EIA-481
EIA-541.
IRF7338
MOSFET N-CHANNEL 60v 60A
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F7101
Abstract: IRF7101 IRF7338
Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω
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4372A
IRF7338
EIA-481
EIA-541.
F7101
IRF7101
IRF7338
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smd diode 74a
Abstract: 78 DIODE SMD KRF7319 P-channel Dual MOSFET VGS -25V
Text: IC IC SMD Type HEXFET Power MOSFET KRF7319 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 30 -30 Continuous Drain Current *5 Ta = 25
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KRF7319
-100A/
smd diode 74a
78 DIODE SMD
KRF7319
P-channel Dual MOSFET VGS -25V
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7338 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit V VDS 12 -12 Continuous Drain Current,VGS@10V , Ta = 25
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KRF7338
-100A/
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p channel mosfet 100v
Abstract: 100V Single p-Channel MOSFET KRF7350 n-channel 100v 100A 100V Single P-Channel HEXFET MOSFET P-channel MOSFET VGS -25V 15a 50v p-channel mosfet Dual N P-Channel 100V 100v P-Channel MOSFET P-channel MOSFET 50V, 10 A rds
Text: IC IC SMD Type HEXFET Power MOSFET KRF7350 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 100 -100 V ID 2.1 -1.5 Continuous Drain Current Ta = 70
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KRF7350
-100A/
p channel mosfet 100v
100V Single p-Channel MOSFET
KRF7350
n-channel 100v 100A
100V Single P-Channel HEXFET MOSFET
P-channel MOSFET VGS -25V
15a 50v p-channel mosfet
Dual N P-Channel 100V
100v P-Channel MOSFET
P-channel MOSFET 50V, 10 A rds
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Untitled
Abstract: No abstract text available
Text: PD - 91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RADHARD W , RAD HARD HEXFET -100 Volt, 0.068W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1433A
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IRHN9250
Abstract: pcb 200W audio amplifier IRHN93250
Text: PD - 91300A IRHN9250 IRHN93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD W , RAD HARD HEXFET -200 Volt, 0.315W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1300A
IRHN9250
IRHN93250
IRHN9250
pcb 200W audio amplifier
IRHN93250
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IRHM9130
Abstract: IRHM93130
Text: PD - 90888A IRHM9130 IRHM93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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0888A
IRHM9130
IRHM93130
IRHM9130
IRHM93130
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93160
Abstract: IRF P CHANNEL MOSFET 10A 100V IRF P-Channel mosfet irf P-Channel MOSFET audio IRHNA9160 IRHNA93160
Text: PD -91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -100 Volt, 0.068Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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-91433A
IRHNA9160
IRHNA93160
93160
IRF P CHANNEL MOSFET 10A 100V
IRF P-Channel mosfet
irf P-Channel MOSFET audio
IRHNA9160
IRHNA93160
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IRF P CHANNEL MOSFET 10A 100V
Abstract: pcb 480a charge amplifier IRHN9130 IRHN93130
Text: PD - 90886A IRHN9130 IRHN93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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0886A
IRHN9130
IRHN93130
IRF P CHANNEL MOSFET 10A 100V
pcb 480a charge amplifier
IRHN9130
IRHN93130
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IRHM9150
Abstract: IRHM93150
Text: PD - 90889B IRHM9150 IRHM93150 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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90889B
IRHM9150
IRHM93150
IRHM9150
IRHM93150
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p-channel power mosfet 14A
Abstract: IRH9250 IRH93250 ed 89a ED 89A diode
Text: PD - 91392A IRH9250 IRH93250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -200 Volt, 0.315Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1392A
IRH9250
IRH93250
p-channel power mosfet 14A
IRH9250
IRH93250
ed 89a
ED 89A diode
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p-chan 10a
Abstract: IRH9130 IRH93130 aval
Text: PD - 90880A IRH9130 IRH93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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0880A
IRH9130
IRH93130
p-chan 10a
IRH9130
IRH93130
aval
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IRFG5110
Abstract: 9437B PN channel MOSFET 10A tp 26c 437B MO-036AB KJJ 15 X1DV
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS COMBINATION INI AND P CHANNEL 8 EACH] POWER MOSFETs IRFG5110 o 14 LEAD DUAL-IN-LINE QUAD (CERAMIC SIDE BRAZED PACKAGE Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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IRFG5110
IRFG5110
9437B
PN channel MOSFET 10A
tp 26c
437B
MO-036AB
KJJ 15
X1DV
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9437B
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL IS EACH POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE) Product Summary 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs
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IRFG5110
IRFG5110
I-222
9437B
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IRF7319
Abstract: 49AA
Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch
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IRF7319
IRF7319
49AA
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.437B I« R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG5110 COMBINATION N AND P CHANNEL [8 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm (N-Channel and P-Channel) HEXFETs The HEXFET® technology is the key to International
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IRFG5110
IRFG5110
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
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IRHM9064
4A554S2
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