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    P-CHANNEL DMOS Search Results

    P-CHANNEL DMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL DMOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EIGHT MOSFET ARRAY

    Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
    Text: A T & T MELEC I C SSE D • □□5002b DDD2flS3 3 ■ OCTAL HIGH-VOLTAGE P-CHANNEL MOSFET ARRAY_ AP0130NA PRELIMINARY ^ Monolithic P-Channel Enhancement-Mode Description The AP0130NA Octal High-Voltage P-Channel MOSFET Array contains eight P-Channel DMOS drivers configured


    OCR Scan     		AP0130NA T-43-25 AP0130NA EIGHT MOSFET ARRAY EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG inherent00mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG i00mA PDF

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertexinc. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVpss/BV^ N-Channel P-Channel 200V -200V Order Number/Package ^DS ON ( m 8 X ) N-Channel 7.0 SO-8 P-Channel 12 TC2320TG Features Low Threshold DMOS Technology □ Low threshold □ Low on resistance


    OCR Scan     		-200V TC2320TG TC2320 TC2320TG PDF

    amplifier marking code a c8g

    Abstract: CMLDM8120 C81 diode
    Text: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 8120G* amplifier marking code a c8g CMLDM8120 C81 diode PDF

    CMUDM8001

    Abstract: CMUDM7001 on SOT523 Power mosfet transistor sot P-channel MOSFET VGS -25V mosfet low idss mosfet low vgs
    Text: CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed


    Original     		CMUDM8001 CMUDM8001 OT-523 100mA CMUDM7001 on SOT523 Power mosfet transistor sot P-channel MOSFET VGS -25V mosfet low idss mosfet low vgs PDF

    MOSFET P-channel SOT-23

    Abstract: 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23
    Text: CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed


    Original     		CMPDM8120 CMPDM8120 C8120 OT-23 360mA 810mA 950mA 25-July MOSFET P-channel SOT-23 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23 PDF

    CMPDM8002A

    Abstract: C802A
    Text: CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed


    Original     		CMPDM8002A CMPDM8002A C802A OT-23 500mA, 25-July 200mA C802A PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CEDM8001 100mW OT-883L CEDM8001: 100mA 29-November PDF

    CEDM8001

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CEDM8001 CEDM8001 OT-883L 100mW CEDM8001: 100mA 16-March PDF

    C81 diode

    Abstract: code C81
    Text: CMLDM8120 SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CMLDM8120 OT-563 810mA 950mA, 360mA 26-March C81 diode code C81 PDF

    CG8 marking

    Abstract: RG marking code transistor
    Text: Central CMLDM8002AG SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002AG is a dual chip P-Channel Enhancement-mode Field Effect Transistor, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8002AG CMLDM8002AG OT-563 200mA CG8 marking RG marking code transistor PDF

    P-channel power mosfet 30V

    Abstract: mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		CMNDM8001 OT-953 100mA 24-September OT-953 P-channel power mosfet 30V mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS PDF

    p-channel mosfet transistor low power

    Abstract: marking code RY SOT marking code 16V diode
    Text: RY INA LIM E PR Central CMLDM8120 TM Semiconductor Corp. SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		CMLDM8120 CMLDM8120 OT-563 810mA 950mA, 360mA p-channel mosfet transistor low power marking code RY SOT marking code 16V diode PDF

    p-channel mosfet transistor low power

    Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
    Text: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    Original     		CEDM8001 CEDM8001 OT-883L 100mA 29-February p-channel mosfet transistor low power mosfet low vgs p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V PDF

    Si4564DY

    Abstract: si4564
    Text: SPICE Device Model Si4564DY Vishay Siliconix N-Channel and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		Si4564DY 18-Jul-08 si4564 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA533EDJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		SiA533EDJ 18-Jul-08 PDF

    SIA513

    Abstract: No abstract text available
    Text: SPICE Device Model SiA513EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		SiA513EDJ 18-Jul-08 SIA513 PDF

    si4574dy

    Abstract: No abstract text available
    Text: SPICE Device Model Si4574DY Vishay Siliconix N-Channel and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		Si4574DY 18-Jul-08 PDF

    SiA519EDJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA519EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		SiA519EDJ 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS


    Original     		CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 PDF

    C81 diode

    Abstract: No abstract text available
    Text: CMLDM8120 CMLDM8120G* SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS


    Original     		CMLDM8120 CMLDM8120G* CMLDM8120: OT-563 C81 diode PDF

    si4532cdy

    Abstract: No abstract text available
    Text: SPICE Device Model Si4532CDY Vishay Siliconix N-Channel and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		Si4532CDY 18-Jul-08 PDF