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    P-CHANNEL 3A 500V Search Results

    P-CHANNEL 3A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL 3A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL9230D FRL9230H FRL9230R

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRL9230D FRL9230H FRL9230R

    TPS27081ADRV

    Abstract: powerdiod
    Text: TPS27081A www.ti.com SLVSBE9 – APRIL 2012 8V, 3A P-Channel High Side Load Switch with Level Shift & Adjustable Slew Rate Control Check for Samples: TPS27081A FEATURES 1 • • • • • • • • • Low ON Resistance, High current PFET – RDS ON = 32mΩ (Typ) at VGS = –4.5V,


    Original     		PDF TPS27081A TPS27081ADRV powerdiod

    2E12

    Abstract: 2N7311D 2N7311H 2N7311R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9230 D, R, H 2N7311D, 2N7311R 2N7311H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 3A, -200V, RDS(on) = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRL9230 2N7311D, 2N7311R 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7311D 2N7311H 2N7311R

    AN-8831

    Abstract: 2E12 2N7280D 2N7280H 2N7280R 3E12 2N728
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM430 D, R, H 2N7280D, 2N7280R 2N7280H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 3A, 500V, RDS(on) = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM430 2N7280D, 2N7280R 2N7280H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Neutrons/cm38 AN-8831 2E12 2N7280D 2N7280H 2N7280R 3E12 2N728

    denso

    Abstract: No abstract text available
    Text: < Dual-In-Line Package Intelligent Power Module > PSM03S93E5-A TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  500V / 3A MOSFET  N-side MOSFET open source  Built-in bootstrap diodes with current limiting resistor


    Original     		PDF PSM03S93E5-A 240Vrms denso

    2SK2182

    Abstract: F3F50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2182 F3F50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 500V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2182 F3F50VX2) FTO-220 2SK2182 F3F50VX2

    CY2LL8423

    Abstract: CY2LL8423OI CY2LL8423OIT CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT
    Text: ComLink Series CY2LL8423 High-drive Dual 2-Channel LVDS Repeater/Mux Features Description • ANSI TIA/EIA-644-1995-compliant • Designed for data rates to > 650 Mbps = 325 MHz • Single 2 x 2 with high-drive output drivers — Low-voltage Differential Signaling with output


    Original     		PDF CY2LL8423 TIA/EIA-644-1995-compliant 50-ohm 350-mV 28-pin CY2LL8423 CY2LL8423OI CY2LL8423OIT CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT

    CY2LL8423

    Abstract: CY2LL8423OI CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT 4Y42 S11y
    Text: 8423 COMLINK SERIES CY2LL8423 High Drive Dual 2-Channel LVDS Repeater/Mux Features Description • ANSI TIA/EIA-644-1995 compliant • Designed for data rates to > 650 Mbps = 325 MHz • Single 2x2 with high drive output drivers — Low Voltage Differential Signaling with output voltages of ± 350 mV into 50-ohm load version (Bus


    Original     		PDF CY2LL8423 TIA/EIA-644-1995 50-ohm 28-pin CY2LL8423 CY2LL8423OI CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT 4Y42 S11y

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7402 33 M ÄRE» Formerly FSS430R4 3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Features Description • 3A, 500V, rDS 0N = 2.70Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r ha s d e v e lo p e d a s e rie s o f R a d ia tio n H a rd e n e d M O S F E T s


    OCR Scan     		PDF FSS430R4 e1998 JANSR2N7402 MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q


    OCR Scan     		PDF FRL9230 2N7311D, 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRL9230D, FRL9230R, FRL9230H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD 732UIS

    Untitled

    Abstract: No abstract text available
    Text: îsï h a r r is U U FRX9130D, FRX9130R E S E M IC O N D U C T O R H •# O / l I_ l Radiation Hardened P-Channel Power MOSFETs june 1994 Package Features • V 3A, -100V, RDS on = 0.550il LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRX9130D, FRX9130R -100V, 550il 100KRAD 300KRAD 1000KRAD 3000KRAD 35MeV/ 43D2271

    m430p

    Abstract: pt 4115 EQUIVALENT m430u
    Text: so HARRIS S E M I C O N D U C T O R FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channe Power MOSFETs June 1998 Features Package • 3A, 500V, RDS(on = 2.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma


    OCR Scan     		PDF FRM430D, FRM430R, FRM430H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD M430U1S M430PH0 m430p pt 4115 EQUIVALENT m430u

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3VS-10 HIGH-SPEED SWITCHING USE FS3VS-10 OUTLINE DRAWING Dimensions in mm •st q w e ■V 6 +i CD Q w r oj q w e r GATE DRAIN SOURCE DRAIN V d s s .500V


    OCR Scan     		PDF FS3VS-10 O-22QS 57KH23

    Untitled

    Abstract: No abstract text available
    Text: m a r r is 2N7282D, 2N7282R 21^72Ö2'H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS430 D, R, H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 3A, 500V, RDS(on) = 2.52ft TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF 2N7282D, 2N7282R O-257AA FRS430 100KRAD 300KRAD 1000KRAD 3000KRAD -257AA

    44i2

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2


    OCR Scan     		PDF FS3UM-10 FS3UM-10 5711K2 44i2

    g6n50e

    Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1S HGTD6N40E1 O-251AA g6n50e G6N40E G6N50 flange terminal 25C1 HGTD6N40E1S HGTD6N50E1

    Untitled

    Abstract: No abstract text available
    Text: m a r r is 2N7280D, 2N7280R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM430 D, R, H November 1994 1 ^ 7 2 R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S FE Ts Package Features • 3A, 500V, RDS(on) = 2.50ft TO-204AA


    OCR Scan     		PDF 2N7280D, 2N7280R FRM430 100KRAD 300KRAD 1000KRAD 3000KRAD

    FS3KM-10

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS3KM-10 HIGH-SPEED SWITCHING USE FS3KM-10 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • VDSS . 500V • rDS ON (MAX) . 4 .4 0


    OCR Scan     		PDF FS3KM-10 FS3KM-10

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5UM-10 HIGH-SPEED SWITCHING USE FS5UM-10 OUTLINE DRAWING Dimensions in mm LU U q w Q w r V d s s .500V q w e r GATE DRAIN SOURCE DRAIN rDS ON (MAX) .1 8Í1


    OCR Scan     		PDF FS5UM-10 O-220

    Untitled

    Abstract: No abstract text available
    Text: ili H U U a r r is S E M I C O N D U C T O R FRS430D, FRS430R, FFÍS430H 3A, 500V, 2.52 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 3A, 500V, RDS on = 2.S2C1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRS430D, FRS430R, S430H O-257AA 300KRAD 1000KRAD 3000KRAD AN-8831,

    K1244

    Abstract: 2SK1244 F3V50 K124
    Text: VXvU -X /\°7 - M 0 SFET ¡S58* VX Series Power MOSFET OUTLINE DIMENSIONS 2SK1244 [F3V50 500V 3A ex *3 B Ciss) ft'/jvcriv Ule-tía; u 7XBcda*S*ô'/JÆU>o • T .- !" •ACl 0 0 V *A ^ X -f e ^ > K - i? • Æ tëÜ RATINGS Absolute Maximum Ratings «


    OCR Scan     		PDF 2SK1244 F3V50) O-220 -K1244 K1244 2SK1244 F3V50 K124