p-channel 2.5v g-s mosfet
Abstract: S50411
Text: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1403BDL
S-50411Rev.
14-Mar-05
p-channel 2.5v g-s mosfet
S50411
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1403BDL Vishay Siliconix P-Channel 2.5V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si1403BDL
18-Jul-08
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mosfet vgs 5v
Abstract: No abstract text available
Text: US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01
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Untitled
Abstract: No abstract text available
Text: US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 Structure Silicon N-channel / P-channel MOSFET Dimensions Unit : mm TUMT6 0.2Max. Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01
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TSMT6
Abstract: No abstract text available
Text: QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 zDimensions Unit : mm zStructure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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Untitled
Abstract: No abstract text available
Text: US6M1 Transistors 4V+2.5V Drive Nch+Nch MOSFET US6M1 zStructure Silicon N-channel / P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6). Abbreviated symbol : M01
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Abstract: No abstract text available
Text: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ
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TSM8405P
TSM8405P
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Untitled
Abstract: No abstract text available
Text: QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 Dimensions Unit : mm Structure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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Untitled
Abstract: No abstract text available
Text: QS6M3 QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 zDimensions Unit : mm zStructure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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TSMT6
Abstract: No abstract text available
Text: QS6M3 Transistors 2.5V Drive Nch+Pch MOSFET QS6M3 zDimensions Unit : mm zStructure Silicon N-channel / P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
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TSM4405P
Abstract: TSM8405P Ultra Low Qg
Text: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ
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TSM8405P
TSM8405P
TSM4405P
TSM4405P
Ultra Low Qg
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Untitled
Abstract: No abstract text available
Text: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from
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4022A
IRF7425
EIA-481
EIA-541.
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MOSFET IRF7425
Abstract: IRF7425 MS-012AA
Text: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from
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4022A
IRF7425
EIA-481
EIA-541.
MOSFET IRF7425
IRF7425
MS-012AA
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Untitled
Abstract: No abstract text available
Text: AP20P02GS/P Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching -20V RDS ON 52mΩ ID G ▼ RoHS compliant BVDSS -18A S Description
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AP20P02GS/P
O-263
O-263
AP20P02GP)
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sot-23 P-Channel MOSFET
Abstract: No abstract text available
Text: SSS2323 P-Channel Enhancement Mode MOSFET SOT-23 Product Summary VDS V ID (A) D RDS(ON) 35 @VGS = -4.5V G 55 @VGS = -2.5V -4A -20V S 100 @VGS = -1.8V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S Pb free.
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SSS2323
OT-23
OT-23
sot-23 P-Channel MOSFET
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Mosfet
Abstract: SSF2429
Text: SSF2429 20V P-Channel MOSFET DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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SSF2429
SSF2429
OT23-6
OT23-6
180mm
Mosfet
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Untitled
Abstract: No abstract text available
Text: PD- 96062 IRF7425PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from
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IRF7425PbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD- 96062 IRF7425PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from
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IRF7425PbF
EIA-481
EIA-541.
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AP20P02P
Abstract: No abstract text available
Text: AP20P02S/P Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching BVDSS -20V RDS ON 52mΩ ID G -18A S Description The Advanced Power MOSFETs from APEC provide the
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AP20P02S/P
O-263
O-263
AP20P02P)
AP20P02P
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to-252 p channel vgs 12v
Abstract: SSM3310GH TO-252 MOSFET p channel
Text: SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability D Simple drive requirement Fast switching G Pb-free; RoHS compliant. BV DSS -20V R DS ON 150mΩ ID -10A S DESCRIPTION G D S The SSM3310GH is in a TO-252 package, which is widely used for
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SSM3310GH
O-252
SSM3310GJ
O-251,
O-252
O-251
to-252 p channel vgs 12v
TO-252 MOSFET p channel
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APM2807QB
Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Text: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)
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APM2807QB
-20V/-2
500mA.
JESD-22,
APM2807QB
ANPEC
APM2807
B102
JESD-22
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: AP9620GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On Resistance D D ▼ Capable of 2.5V Drive D D ▼ Fast Switching G ▼ RoHS Compliant SO-8 S BVDSS -20V RDS ON 20mΩ ID -9.5A S S Description
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AP9620GM-HF
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S62D
Abstract: 27S20 siliconix
Text: SÌ4562DY Vishay Siliconix N- and P-Channel 2.5-V G-S MOSFET V o s (V) N-Channel P-Channel Rd s < om >(Q) lD (A) Q.025 @ V qs ~ 4.5 V ±7.1 0.035 @ VGS = 2.5V ±6.0 0.033 @ VQS = -4.5 V ±6.2 0.050 @ VGS =-2 .5 V ±5.0 20 a* ,>4 20 u D, SO-8 s2 D, o o—1
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4562DY
S-54940--Rev.
29-Sep-97
S-54940--
S62D
27S20
siliconix
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5l 0380
Abstract: sl 0380 r fs3t MARKING W1 AD CBVK741B019 F63TNR FDR835N FDR838P
Text: 1999 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features T h e se P -G hannel 2.5V s pe cified M O S FETs are produced using Fairchild S e m ic o n d u c to r's a d v a n c e d P ow erT ren ch p rocess th a t ha s been e s p e c ia lly ta ilo re d to m in im ize th e
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FDR838P
43iR-RÃ
5l 0380
sl 0380 r
fs3t
MARKING W1 AD
CBVK741B019
F63TNR
FDR835N
FDR838P
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