Untitled
Abstract: No abstract text available
Text: MMFTP84 MMFTP84 P-Channel Enhancement Mode Vertical D-MOS Transistor P-Kanal Vertikal D-MOS Transistor - Anreicherungstyp P P Version 2011-01-24 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type
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MMFTP84
MMFTP84
OT-23
O-236)
UL94V-0
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BSS84 P
Abstract: BSS84 GSOT-23
Text: BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical D-MOS transistor in a SOT23 Surface-Mount Device SMD package. 1.2 Features
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BSS84
BSS84 P
BSS84
GSOT-23
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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XP152A01D8MR
Abstract: No abstract text available
Text: XP152A01D8MR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.48Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP152A01D8MR is a P-Channel Power MOS FET with low on-state
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XP152A01D8MR
OT-23
XP152A01D8MR
OT-23
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0222SUA The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0112SMA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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FET MARKING CODE
Abstract: sot-89 MARKING CODE 4A S-90P0332SUA-TF S-90P0112SMA S-90P0112SMA-TF S-90P0222SUA-TF
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0112SMA The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
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S-90P0112SMA-TF
Abstract: S-90P0222SUA-TF S-90P0332SUA S-90P0332SUA-TF 90P03
Text: Rev.1.0_00 P-CHANNEL POWER MOS FET FOR SWITCHING S-90P0332SUA The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
90P03
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S-90P0222SUA
Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0222SUA
S-90P0222SUA
OT-89-3
OT-89-3
S-90P0222SUA-TF
90P03
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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S-90P0332SUA
Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Text: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0332SUA
S-90P0332SUA
OT-89-3
OT-89-3
S-90P0332SUA-TF
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
13003 TRANSISTOR equivalent
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S-90P0112SMA
Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Text: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set
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S-90P0112SMA
S-90P0112SMA
OT-23-3
OT-23-3
S-90P0112SMA-TF
FET MARKING CODE
sot-89 MARKING CODE 4A
S-90P0112SMA-TF
S-90P0222SUA-TF
S-90P0332SUA-TF
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TRANSISTOR SMD MARKING CODE SP
Abstract: smd "code rc" transistor marking code sp TRANSISTOR SMD MARKING CODE X D transistor SMD 520 BSS84 transistor SMD MARKING CODE marking code br SMD transistor marking code SS SOT23 transistor smd transistor 24 sot23
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 PINNING - SOT23 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. PIN SYMBOL
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BSS84
1997Jun
TRANSISTOR SMD MARKING CODE SP
smd "code rc" transistor
marking code sp
TRANSISTOR SMD MARKING CODE X D
transistor SMD 520
transistor SMD MARKING CODE
marking code br SMD transistor
marking code SS SOT23 transistor
smd transistor 24 sot23
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smd transistor LY
Abstract: transistor smd 303 smd transistor 304
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS84 FEATURES PINNING - SOT23 • Low threshold voltage PIN SYMBOL DESCRIPTION • Direct interface to C-MOS, TTL, etc. 1 • High-speed switching 2 g s gate
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BSS84
PARAMET97Jun
smd transistor LY
transistor smd 303
smd transistor 304
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor BSH202 FEATURES PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain
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BSH202
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BSH205
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES BSH205 PINNING - SOT23 • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 • Direct interface to C-MOS, TTL, etc. 2 g s gate • Very low threshold.
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BSH205
1997Jun
BSH205
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Untitled
Abstract: No abstract text available
Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)
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T0220
14-Pin
VQ2001J
VQ200IP
VQ2004J
T0236
TP0101T
TP0202T
TP06I0T
VP06I0T
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BbN20
Abstract: MSB003 BSN20
Text: • Philips Semiconductors — bbS3T31 a0237t,S Tib ■ N AUER P H I L I P S / D I S C R E T E APX _ „ Product specification b7E D N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,
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a0237t
BSN20
btiS3T31
237hfl
BbN20
MM794
MRA78S
VaSimat25
BbN20
MSB003
BSN20
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Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors N bbSB'iai 0024136 4TT ■ I A P X AUER Data sheet status Product specification P H IL IP S /D IS C R E T E b?E ]> 2N7002 N-channel vertical D-MOS transistor date of issue April 1991 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,
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2N7002
OT23bbS3T31
MCB703
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BSH204
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES BSH204 PINNING • High-speed switching PIN SYMBOL • No secondary breakdown 1 gate • Direct interface to C-MOS, TTL, etc. 2 9 s • Very low threshold. 3
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BSH204
BSH204
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SMD roA
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor FEATURES BSH205 PINNING • High-speed switching PIN SYMBOL • No secondary breakdown 1 2 g s gate • Direct interface to C-MOS, TTL, etc. • Very low threshold.
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BSH205
SMD roA
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Untitled
Abstract: No abstract text available
Text: Preliminary specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH203 PINNING • High-speed switching PIN SYMBOL • No secondary breakdown 1 2 9 s gate • Direct interface to C-MOS, TTL, etc. 3 d drain DESCRIPTION source
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1D smd transistor
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH203 FEATURES PINNING • High-speed switching PIN SYMBOL • No secondary breakdown 1 • Direct interface to C-MOS, TTL, etc. 2 g s source 3 d drain DESCRIPTION gate
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BSH203
1D smd transistor
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