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    P CHANNEL MOSFET 500MA Search Results

    P CHANNEL MOSFET 500MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL MOSFET 500MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VEC2605

    Abstract: No abstract text available
    Text: VEC2605 Ordering number : ENN8197 P-Channel and N-Channel Silicon MOSFET VEC2605 General-Purpose Switching Device Applications Features • • • • Best suited for DC/DC converters. The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance


    Original     		PDF VEC2605 ENN8197 VEC2605

    CMLM8205

    Abstract: PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A
    Text: Product Brief CMLM8205 Multi Discrete Module 50V, 280mA, P-Channel MOSFET and 40V, 500mA Schottky Diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module consisting of a single P-Channel Enhancement Mode MOSFET


    Original     		PDF CMLM8205 280mA, 500mA OT-563 CMLM8205 OT-563 100mA 21x9x9 27x9x17 20x18x5 PB CMLM8205 mosfet 4812 marking 34 diode SCHOTTKY sot-563 MOSFET D1 P-Channel Enhancement MOSFET module 4812 mosfet "Schottky Diode" Schottky Diode power mosfet 500 A

    ENN8206

    Abstract: CPH5810 MCH3312
    Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


    Original     		PDF CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312

    7382

    Abstract: CPH5820 D2503 MCH3308 SBS006M
    Text: Ordering number : ENN7382 CPH5820 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5820 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2171


    Original     		PDF ENN7382 CPH5820 MCH3308) SBS006M) CPH5820] 7382 CPH5820 D2503 MCH3308 SBS006M

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    Original     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]

    TA-3176

    Abstract: marking QB MCH3308 MCH5802 SBS006M
    Text: Ordering number : ENN6961 MCH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5802 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3308 and a Schottky Barrier Diode (SBS006M) 2195


    Original     		PDF ENN6961 MCH5802 MCH3308) SBS006M) MCH5802] TA-3176 marking QB MCH3308 MCH5802 SBS006M

    MCH3312

    Abstract: CPH5854 SB1003M3 A05166 marking YG
    Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG

    diode N1004

    Abstract: CPH5822 MCH3312 N1004 SBS010M
    Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF CPH5822 ENN7702A MCH3312) SBS010M) diode N1004 CPH5822 MCH3312 N1004 SBS010M

    Untitled

    Abstract: No abstract text available
    Text: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package


    Original     		PDF ENA0440 SCH2811 A0440-6/6

    MCH3307

    Abstract: SBS004 ENN8235 2171A
    Text: CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET MCH3307 and a Schottky Barrier Diode (SBS004)


    Original     		PDF CPH5838 ENN8235 MCH3307) SBS004) MCH3307 SBS004 ENN8235 2171A

    Untitled

    Abstract: No abstract text available
    Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF ENN7702 CPH5822 MCH3312) SBS010M)

    82306

    Abstract: MCH3312 CPH5852 SB1003M3
    Text: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5852 ENA0336 MCH3312) SB1003M3) A0336-6/6 82306 MCH3312 CPH5852 SB1003M3

    CPH5821

    Abstract: MCH3312 SBS004 marking qx
    Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)


    Original     		PDF CPH5821 ENN7701 MCH3312) SBS004) CPH5821 MCH3312 SBS004 marking qx

    SS1001

    Abstract: MCH3307 MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


    Original     		PDF MCH5836 ENA0780A MCH3307) SS10015M) PW10s, A0780-6/6 SS1001 MCH3307 MCH5836 SS10015M

    P-Channel MOSFET code 1A

    Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise P-Channel MOSFET code 1A P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V

    Schottky Diode 20V 5A

    Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
    Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect


    Original     		PDF SPC6801 SPC6801combines -30V/-2 105ise Schottky Diode 20V 5A Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A

    MCH6627

    Abstract: No abstract text available
    Text: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


    Original     		PDF MCH6627 ENN8000 MCH6627

    Untitled

    Abstract: No abstract text available
    Text: MCH6627 Ordering number : ENN8000 N-Channel and P-Channel Silicon MOSFETs MCH6627 General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


    Original     		PDF MCH6627 ENN8000 MCH6627 900mm2â MCH6627/D

    CPH5605

    Abstract: No abstract text available
    Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON


    Original     		PDF ENN6441 CPH5605 CPH5605] CPH5605

    it-007

    Abstract: CPH5605 IT01080
    Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON


    Original     		PDF ENN6441 CPH5605 CPH5605] CPH5605 it-007 IT01080

    82306

    Abstract: SCH2811
    Text: SCH2811 Ordering number : ENA0440 SANYO Semiconductors DATA SHEET SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package


    Original     		PDF SCH2811 ENA0440 A0440-6/6 82306 SCH2811

    AAT4601

    Abstract: AAT4625 AAT4626 AAT4626IAS-1-T1 AAT4626IAS-T1
    Text: AAT4626 USB Dual-Channel Power Switch SmartSwitch General Description Features The AAT4626 SmartSwitch is part of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. It is a dual-channel 500mA currentlimited P-channel MOSFET power switch designed


    Original     		PDF AAT4626 AAT4626 500mA AAT4601 AAT4625 AAT4626IAS-1-T1 AAT4626IAS-T1

    MCH6626

    Abstract: No abstract text available
    Text: MCH6626 Ordering number : ENN7918 N-Channel and P-Channel Silicon MOSFETs MCH6626 General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling


    Original     		PDF MCH6626 ENN7918 MCH6626] MCH6626

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    OCR Scan     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]