RD10
Abstract: WTV3585
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
03-Apr-07
RD10
WTV3585
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0342F
Abstract: MAGNACHIP MDS7331 trench mosfet
Text: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
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MDS7331
MDS7331
0342F
MAGNACHIP
trench mosfet
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MDH3331
Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.
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MDH3331
OT-23
MDH3331
P-channel Trench MOSFET
MagnaChip Semiconductor
MOSFET dynamic
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MDD3754
Abstract: MDD*3754 MDD375 P-channel Trench MOSFET trench mosfet magnachip .MDD3754 48m TO-252 TW18
Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET, -40V, -12A, 48mΩ General Description Features The MDD3754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent
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MDD3754
MDD3754
MDD*3754
MDD375
P-channel Trench MOSFET
trench mosfet
magnachip
.MDD3754
48m TO-252
TW18
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GTT6405
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.
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GTT6405
GTT6405
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G3407
Abstract: No abstract text available
Text: Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS ON ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.
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G3407
G3407
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onsemi 035 Schottky diode
Abstract: diode Marking code t5
Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD3147F
NTGD3147F/D
onsemi 035 Schottky diode
diode Marking code t5
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SMG2343
Abstract: MosFET
Text: SMG2343 -4.1A , -30V , RDS ON 45 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2343 uses advanced trench technology to provide excellent on-resistance with low gate change.
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SMG2343
SC-59
SMG2343
15-Aug-2011
MosFET
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING
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FS10UMA-5A
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0
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FS10UMA-5A
FS10UMA-5A
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FS20UMA-5A
Abstract: 250v 10A mosfet
Text: MITSUBISHI Nch POWER MOSFET ARY FS20UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0
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FS20UMA-5A
O-220e
FS20UMA-5A
250v 10A mosfet
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FS12um
Abstract: VA36 FS12UMA-5A
Text: MITSUBISHI Nch POWER MOSFET ARY FS12UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS12UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0
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FS12UMA-5A
FS12um
VA36
FS12UMA-5A
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fs16
Abstract: FS16UMA-5A
Text: MITSUBISHI Nch POWER MOSFET ARY FS16UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS16UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0
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FS16UMA-5A
fs16
FS16UMA-5A
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j477
Abstract: No abstract text available
Text: SPECIFICATION DE VI C E N AM E : P ow er M O S F E T T Y P E N AME : 2SJ477-01MR SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED " NAME APPROVED Fuji Electric Co.,Ltd. 1/• I2 1.Scope This specifies Fuji Power MOSFET 2SJ477-01MR
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OCR Scan
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2SJ477-01MR
2SJ477-01MR
T0-220F
j477
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GFIJ
Abstract: No abstract text available
Text: S P E C I F I C A T I O N TENTAT DEVICE NAME : TYPE NAME : IVE P o w e r MOSFET 2 S K 2 7 5 4 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJ-ld DRAWN CHECKED
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OCR Scan
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2SK2754-01L
D3kiiE75s£
GFIJ
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003A
Abstract: 2SK2759 2SK2759-01R
Text: S P E C I F I C A T I O N T E N T A T I V E DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 7 5 9 - 0 1R SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJLid
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OCR Scan
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2SK2759-01R
0257-R-004a
Dpu191
150-003a
0257-R-003a
003A
2SK2759
2SK2759-01R
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVI CE NAME : TYPE.NAME : P o w e r MOSFET 2 S K 2 5 2 6 - 0 1_ . SPEC. No. :- - - Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN N AM E APPROVED Fuji Electric Ca,LM
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OCR Scan
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0257-R-004a
T0-22Q
0257-R-003a
Q257-R-003a
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UAA 1250
Abstract: H1250
Text: SPECIFICATION D EVICE NAME : Power MOSFET 2SK2850-01 TYPE NAME - SPEC. NO. : Fuji Electric Co.Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED s' il i 1/ Mi h I.S co p e This specifies Fuji Power MOSFET 2SK2850-01
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2SK2850-01
2SK2850-01
UAA 1250
H1250
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2SK2771-01R
Abstract: 003A
Text: S P E C I F I C A T I O N DEVICE NAME : P o w e r MOSF ET TYPE NAME : 2 S K 2 7 7 1 - 0 1R SPEC. No. Fu j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED P i iti P lü r t r ir * P A 1t r i CHECKED •
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2SK2771-01R
0257-R-004a
2SK2771-01R
80//s
0257-R-003a
025T-R-003a
003A
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Untitled
Abstract: No abstract text available
Text: i S P E CI F I CATI ON DEVICE NAME : TYPE NAME ; P o w e r MOSFET 2 S K 2 5 2 2 - Q 1 MR SPEC. No. F u j i This S p e c ific a tio n DATE DRAWN NAME APPROVED E l e c t r i c Co . , Ltd. is s u b j e c t t o change w i t h o ut n ot i ce . Fuji Electric Co^id.
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OCR Scan
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2SK2522-01MR
0257-R-004a
O-220F
0257-R-003a
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PDF
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Untitled
Abstract: No abstract text available
Text: S P E C I F I C A T I ON DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 0 9 8 - 0 1M R SPEC. No. Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric CoJLId. DRAWN CHECKED o z d * o 1 /
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OCR Scan
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2SK2098-01MR
TQ-220F
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D E V IC E N A M E : P ow er M O S F E T T Y P E NAM E 2 S K 2 6 8 9 -0 1 MR S P E C . NO. : Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. Vo Y n?R7-R-004a
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OCR Scan
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2SK2689-01MR
R7-R-004a
2SK2689-01
O-22QF
0257-R
-003a
0257-R-003a
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2SK2688-01
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2688-01 L.S .: SPEC. NO. Fuji Electric Co.,Ltd. This Specification Is subject to change without notice. DATE DRAWN. NAME APPROVED Fuji Electric Co.,Ltd. CHECKED, 1/ y n w -p -n ru » 1.Scope This specifies Fuji Power MOSFET 2SK2688-01 L,S
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OCR Scan
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2SK2688-01
MOSFET2SK2688-01L
0357-R-003a
0257-R-003a
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2SK1639
Abstract: L03A
Text: J. SPECIFICATION T E N T A T DEVICE NAME : TYPE NAME : I V E Power MOSFET 2 S K 1 6 3 9— 0 1 SPEC. No. F u j i E l e c t r i c Co. t Ltd. This Specification is subject to change without notice. D A TE NAM E APPROVED F i lit F l p r t r i r P / v 1 t r L
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2SK1639-01
0257-R-004a
0257-R-003a
10AfTc
2SK1639
L03A
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