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    P CHANGE MOSFET Search Results

    P CHANGE MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANGE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics marking code date

    Abstract: Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/ CT/ 0C27 CATANIA, Jul 17th 2000 DSG Discrete and Standard Circuits Group Catania POWER MOS SILICON LINE CHANGE FOR THE INDUSTRY STANDARDS: IRF820 INVOLVED P&L FAMILY: 29 PRODUCT FAMILY: POWER MOSFETs WHAT : FOLLOWING UP THE DIVISIONAL PROGRAM AIMED AT DEVELOPING NEW


    Original     		PDF IRF820 O-220 DSG/CT/0C27 OP271/272 STMicroelectronics marking code date Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date

    RD10

    Abstract: WTV3585
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 03-Apr-07 RD10 WTV3585

    Untitled

    Abstract: No abstract text available
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 OT-26 03-Apr-07

    INJ0003AC1

    Abstract: INJ0003AT2 INJ0003AU1 INJ0003AX SC-75A INJ0003AM1
    Text: ＩＮJ0003AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0003AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage


    Original     		PDF J0003A INJ0003AX INJ0003AT2 INJ0003AM1 INJ0003AC1 INJ0003AT2 INJ0003AU1 SC-75A INJ0003AM1

    MAX891L

    Abstract: MAX891LEUA MAX892L MAX892LEUA
    Text: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 10/96 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side


    Original     		PDF MAX891L/MAX892L 500mA 250mA, 500mA 250mA MAX891L MAX892L MAX891L MAX891LEUA MAX892L MAX892LEUA

    INJ0002AC1

    Abstract: INJ0002AM1 INJ0002AT2 INJ0002AU1 INJ0002AX SC-75A
    Text: ＩＮJ0002AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0002AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage


    Original     		PDF J0002A INJ0002AX INJ0002AT2 INJ0002AM1 INJ0002AC1 INJ0002AM1 INJ0002AT2 INJ0002AU1 SC-75A

    INJ0001AC1

    Abstract: INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A
    Text: ＩＮJ0001AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0001AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage


    Original     		PDF J0001A INJ0001A INJ0001AT2 INJ0001AM1 INJ0001AC1 INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A

    INJ0011AM1

    Abstract: INJ0011AC1 INJ0011AT2 INJ0011AU1 SC-75A INJ0011A
    Text: ＩＮJ0011AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage


    Original     		PDF J0011A INJ0011A INJ0011AT2 INJ0011AM1 INJ0011AM1 INJ0011AC1 INJ0011AT2 INJ0011AU1 SC-75A

    MDS9753E

    Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
    Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.


    Original     		PDF MDS9753E MDS9753E­ Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet

    MDS9651

    Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
    Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		PDF MDS9651 MDS9651­ N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel

    0342F

    Abstract: MAGNACHIP MDS7331 trench mosfet
    Text: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.


    Original     		PDF MDS7331 MDS7331 0342F MAGNACHIP trench mosfet

    MDH3331

    Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		PDF MDH3331 OT-23 MDH3331 P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent


    Original     		PDF MDS3651 MDS3651â

    MDD9754

    Abstract: MDD-9754
    Text: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability


    Original     		PDF MDD9754 MDD9754â MDD-9754

    FA7738N

    Abstract: fa7738 fuji capacitor FA7738P 3.1v ZENER DIODE PWM controller sop-8 SD833-06 JESD51-5
    Text: FA7738N/P FA7738N/P Application Note July-2006 Fuji Electric Device Technology Co.,Ltd. 1 FA7738N/P WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as of July 2006. The contents are subject to change without notice for specification changes or other


    Original     		PDF FA7738N/P July-2006 FA7738N fa7738 fuji capacitor FA7738P 3.1v ZENER DIODE PWM controller sop-8 SD833-06 JESD51-5

    MDS3651

    Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
    Text: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability


    Original     		PDF MDS3651 MDS3651­ MDS365 mds3651r p-channel 60V 100A MOSFET

    GTT6405

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.


    Original     		PDF GTT6405 GTT6405

    G3407

    Abstract: No abstract text available
    Text: Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS ON ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.


    Original     		PDF G3407 G3407

    d13n3

    Abstract: LTC2153-14 LTC2153UJ-14 sck 124 442 LTC2153C LTC2153CUJ-14 LTC2153I LTC2153IUJ-14 voltage stabilizer schematic diagram mark d13n
    Text: Electrical Specifications Subject to Change LTC2153-14 14-Bit 310Msps ADC Features Description 68.8dBFS SNR n 88dB SFDR n Low Power: 401mW Total n Single 1.8V Supply n DDR LVDS Outputs n Easy-to-Drive 1.32V P-P Input Range n 1.25GHz Full Power Bandwidth S/H


    Original     		PDF LTC2153-14 14-Bit 310Msps n88dB 401mW 25GHz 12-Bit n40-Lead d13n3 LTC2153-14 LTC2153UJ-14 sck 124 442 LTC2153C LTC2153CUJ-14 LTC2153I LTC2153IUJ-14 voltage stabilizer schematic diagram mark d13n

    onsemi 035 Schottky diode

    Abstract: diode Marking code t5
    Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility


    Original     		PDF NTGD3147F NTGD3147F/D onsemi 035 Schottky diode diode Marking code t5

    j477

    Abstract: No abstract text available
    Text: SPECIFICATION DE VI C E N AM E : P ow er M O S F E T T Y P E N AME : 2SJ477-01MR SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED " NAME APPROVED Fuji Electric Co.,Ltd. 1/• I2 1.Scope This specifies Fuji Power MOSFET 2SJ477-01MR


    OCR Scan     		PDF 2SJ477-01MR 2SJ477-01MR T0-220F j477

    EH12

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 5 2 8 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED P i ü i P l â f ' l r i / ' r V k 1i r l CHECKED DWG.N0. DRAWN 1/ 11


    OCR Scan     		PDF 2SK2528-01 0257-R-004a 0257-R-003a EH12

    2SK2525-01

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : Power MOSFET 2 SK 2 5 2 5- 0 I SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE NAME APPROVED P • imiîj îi wF il vn yr ut ri wi r CHECKED


    OCR Scan     		PDF 0257-R-004a 2SK2525-0 Y0257-R-003a 0257-R-003a 2SK2525-01

    D03A

    Abstract: 2SK2652-01 SC-65 T151
    Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P owe r MOSFET 2 S K 2 6 5 2- 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e cifica tio n is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric C a ¿ M CHECKED il Y 0257-R-004a


    OCR Scan     		PDF 2SK2652-01 0257-R-004a D03A 2SK2652-01 SC-65 T151