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    P 605 TRANSISTOR Search Results

    P 605 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P 605 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tda 2070

    Abstract: E2p 93 transistor NP4GS3 CCGA -CG 472 TDA 2060 CCGA 472 mechanical drawing tree Data Structure INCAP LIMITED IT SERIES LP1 K09 powerpc 405gp
    Text:  IBM PowerNP NP4GS3 Network Processor Preliminary January 29, 2003  0.1 Copyright and Disclaimer  Copyright International Business Machines Corporation 1999, 2003 All Rights Reserved US Government Users Restricted Rights - Use, duplication or disclosure restricted by GSA ADP Schedule Contract with IBM Corp.


    Original     		PDF

    transistor SMD t04

    Abstract: smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A
    Text: Optical Semiconductor Devices Visible LEDs z 248 Photo Couplers z 254 Photo Sensors z 272 Fiber-Optic Devices TOSLINK z 278 Visible Laser Diodes z 281 Optical Communication Devices z 281 CCD and CMOS Image Sensors z 282 247 Visible LEDs InGaAP High-Brightness (Package Size :ϕ 5)


    Original     		PDF 22PIN 15PIN 12PIN 20PIN 01/2Q 01/1Q 02/3Q 02/4Q transistor SMD t04 smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A

    2SC605

    Abstract: 2SC606
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 SC 605 B , 2SC606(B) FOR TV TUNER 2SC 606(B ) : VHF RF AMPLIFIER 2SC 605(B ) : VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE D IM EN SIO N S (U nit : mm) • Low NF high Gpe. NF = 2.0 dB TY P . Gpe = 24 dB TY P . <f = 200 MHz)


    OCR Scan     		PDF 2SC606 606IB 2SC605

    GP605

    Abstract: GP605ID
    Text: GENNUM C O R P O R A T I O G P 605 Resonant Mode Power Supply Controller N DATA SHEET FEATURES CIRCUIT DESCRIPTION • frequency range of 1 kHz to 2 MHz The GP605 utilizes frequency modulation instead of pulse width modulation to achieve regulation. The pulse width is


    OCR Scan     		PDF GP605 GP605ID

    2SD571

    Abstract: 2SB605
    Text: NEC v U = i > h 7 > y ^ ^ Silicon T ran sisto r 2SD571 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier £fJfil2 Unit : mm o t —T 'i *T> y°ï$co Y ÿ 4 o 2 S B 605 ¿ n y 7 “ ') S > ? >) O / J^ T P tA ^ ^ <, 7.0 MAX. T é tto if t lÎŒ T - t o


    OCR Scan     		PDF 2SD571 2SB605 PWS10 2SD571

    JY 222 M capacitor

    Abstract: No abstract text available
    Text: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408


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    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    DS11

    Abstract: DT3055L
    Text: DT3055L VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance


    OCR Scan     		PDF DT3055L OT-223 OT-223 Char125 DT3055L DS11

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    6D120C-050

    Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
    Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.


    OCR Scan     		PDF EVF33T-040 6DM0A-050 EVF31T-050A 6DI15A-050 150M603 6DI10A-120 6DI15A-120 6DI30A-120 2DI200A-020 1DI500A-030 6D120C-050 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 IC M605 6DI50B-050

    6d120c-050

    Abstract: 6d150c-050 1DI500A-030 6D115A-050 6D175A-050 all type transistor equivalent 6DI30B-050 m605 6D130A-120 6D130A
    Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.


    OCR Scan     		PDF EVF33T-040 6DM0A-050 EVF31T-050A 6DI15A-050 6DI15A-120 6DI30A-120 2DI200A-020 1DI500A-030 6d120c-050 6d150c-050 6D115A-050 6D175A-050 all type transistor equivalent 6DI30B-050 m605 6D130A-120 6D130A

    6d120c-050

    Abstract: 6D175A-050 6d150c-050 1DI500A-030 6D115A-050 6DI30B-050 6D130A-120 all type transistor equivalent M605 6D130A
    Text: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.


    OCR Scan     		PDF EVF33T-040 6DM0A-050 EVF31T-050A 6DI15A-050 6DI15A-120 6DI30A-120 2DI200A-020 1DI500A-030 6d120c-050 6D175A-050 6d150c-050 6D115A-050 6DI30B-050 6D130A-120 all type transistor equivalent M605 6D130A

    BA 92 SAMSUNG

    Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
    Text: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPS6651 625mW T-29-21 BA 92 SAMSUNG transistor BA 92 samsung transistor Ba 92 transistor samsung

    IC M605

    Abstract: 6DI30B-050 M605 6DI15A-050 6DI10A-050 6DI15A-120 6DI20C-050 6DI50C-050 6DI75A-050 6DI50B-050
    Text: BIPOLAR TRANSISTO R M O D ULES Ratings and Specifications ¿i 1400 v o lts class p o w e r tran sisto r m odules • P o w e r transistors and fre e w h e e l dio d es are built into o ne package. • T e rm in a l lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross.


    OCR Scan     		PDF 2DI30A 2DI100A 1DI200A-140 DI15A-120 2DI2UOA-020 233B71E 00372T IC M605 6DI30B-050 M605 6DI15A-050 6DI10A-050 6DI15A-120 6DI20C-050 6DI50C-050 6DI75A-050 6DI50B-050

    IC M605

    Abstract: 6DI30B-050 M605 6DI20C-050 6di15a-050 6DI75A-050 EVF31T-050A 1DI200A-140 6DI10A-050 M105
    Text: BIPOLAR TRANSISTO R M O D ULES Ratings and Specifications ¿i 1400 v o lts class p o w e r tran sisto r m odules • P o w e r transistors and fre e w h e e l dio d es are built into o ne package. • T e rm in a l lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross.


    OCR Scan     		PDF 2DI30A 2DI100A 1DI200A-140 2DI2UOA-020 00372ci IC M605 6DI30B-050 M605 6DI20C-050 6di15a-050 6DI75A-050 EVF31T-050A 6DI10A-050 M105

    Philips FA 153

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Page SOT78 TO-220AB 602 SOT82 603 SOT93B 604 SOT 186 605 SOT186A 606 SOT 199 607 SOT399 608 SOT429 609 SOT430 610 Philips Semiconductors High-voltage and Switching NPN Power Transistors Packa9e ouMines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead T0-220AB


    OCR Scan     		PDF O-220AB) OT93B OT186A OT399 OT429 OT430 T0-220AB O-220AB O-247 Philips FA 153

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    MICRO SWITCH FREEPORT. ILL. U.S.A

    Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
    Text: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN


    OCR Scan     		PDF CO79902 PR22156 C08374-1 C093789 R23775 PR237B7 PR23760 C093843 C095107 CO-95704 MICRO SWITCH FREEPORT. ILL. U.S.A VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3

    TRANSISTOR BO 344

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT605 ISSU E 1 - SEPT 93_ L FEATURES * 120 Volt V CE0 * G ain of 2 K at lc=1 A m p * Ptot= 1 Watt A P P L IC A T IO N S * * Lam p, so le n o id and relay d riv e rs


    OCR Scan     		PDF FXT605 300jis. TRANSISTOR BO 344

    marking code 604 SOT23

    Abstract: marking 603 npn transistor
    Text: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kii JZ L nr Pin Configuration h Package O 1 =B CO Q62702-C2255 h WKs m Marking Ordering Code BCR 119 ro Type nr


    OCR Scan     		PDF Q62702-C2255 OT-23 40fnm 300ns; marking code 604 SOT23 marking 603 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0


    OCR Scan     		PDF 2SD1563 15Jil 2SB1086Â 2SB1086.

    Untitled

    Abstract: No abstract text available
    Text: S AM S UN G SEMICONDUCTOR I NC MMBA812M7 14E D §7*11,4142 0 0 0 75 3 1 , T | PNP EPITAXIAL SILICON TRANSISTOR T -^ l-O q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBA812M7 OT-23 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBA812M4 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR . INC MMBA812M5 l^ E O 00Q7231 S | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 00Q7231 MMBA812M5 MMBT5086 OT-23