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    Abstract: No abstract text available
    Text: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0


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    Abstract: FL05R200A MS620J
    Text: w T - ^ ' 7 7 -fJ l/^ W O U N D TORROIDS AND BEADS OPERATING TEMP. —2 5 ~ + 1 0 5 °C #|pnn i B f S » - É - t î (Including self-generated heat) » *# < 7 5 *i4 7 i7 < • Use of high loss ferrite materials for excellent high frequency noise absorp­


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