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    P 471 MOSFET Search Results

    P 471 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P 471 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTD18N06

    Abstract: NTD30N02
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* ID (A) PD (W) 23.6 32 110 Max Rating Config. Page No. NTD110N02R


    Original     		PDF O-252) NTD25P03L NTD20P06L NTD2955 NTD110N02R NTD95N02R NTD85N02R NTD80N02 NTD60N02R NTD30N02 NTD18N06

    MMSD914LT1

    Abstract: 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 471 2A, 200KHZ HIGH VOLTAGE BUCK CONVERTER LT3430 DESCRIPTION Demonstration circuit 471 is a 60V, 200kHz, 2A load current, monolithic step-down DC/DC switching converter using the LT3430. With its wide input voltage range, 3A internal power


    Original     		PDF 200KHZ LT3430 200kHz, LT3430. LT3430 TSSOPFE16 06033A221KAT1A 0603YC223KAT1A THCR60E2A475ZT MMSD914LT1 2A 5v ZENER DIODE MMSD914LT electrolytic capacitor 1uF 25v POLY AVX smd inductors .33uH 20A 48V to 12V buck boost converter C-THCR60 nec 2501 MMSD914L EMK212BJ105ZG

    SSD50N08-14D

    Abstract: MosFET
    Text: SSD50N08-14D 55A, 80V, RDS ON 11mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to


    Original     		PDF SSD50N08-14D O-252 O-252 21-Jan-2014 SSD50N08-14D MosFET

    NTC 10D-9

    Abstract: FAN7527 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor
    Text: www.fairchildsemi.com Application Note AN4107 Design of Power Factor Correction Using FAN7527 1. Introduction power factor is obtained. The FAN7527 is an active power factor correction PFC controller for boost PFC application which operates in the critical conduction mode. It turns on MOSFET when the


    Original     		PDF AN4107 FAN7527 FAN7527 NTC 10D-9 "EI CORE" 10D-9 fan7527 application note transistor 41 74t VARISTOR 7k 471 ntc rt1 varistor 10k 471 10D-9 varistor

    diode bridge bd1 4a 600V

    Abstract: 103 Variable resistor p 471 mosfet 10D09 CM330060 EI2519 EI3026 EI-3530 EI-3026 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM
    Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the


    Original     		PDF AN4121 FAN7527B FAN7527B diode bridge bd1 4a 600V 103 Variable resistor p 471 mosfet 10D09 CM330060 EI2519 EI3026 EI-3530 EI-3026 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    0.22UF 275VAC CAPACITOR

    Abstract: 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 FAN7527B 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530
    Text: www.fairchildsemi.com Application Note AN4121 Design of Power Factor Correction Circuit Using FAN7527B 1. Introduction power factor is obtained. The FAN7527B is an active power factor correction PFC controller for boost PFC application which operates in the


    Original     		PDF AN4121 FAN7527B FAN7527B 0.22UF 275VAC CAPACITOR 24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NTC 5R1 22uf 450v electrolytic capacitor 103 Variable resistor "EI CORE" EI3026 12v 150W AUDIO AMPLIFIER CIRCUIT DIAGRAM EI3530

    VJ0805

    Abstract: VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225 NF223
    Text: VJ OMD Series Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications. • Excellent reliability and thermal shock


    Original     		PDF 2002/95/EC 11-Mar-11 VJ0805 VJ1206 VJ1210 VJ1808 VJ1812 VJ2220 VJ2225 NF223

    vitramon vj series capacitor t dielectric

    Abstract: No abstract text available
    Text: VJ OMD Series Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications. • Excellent reliability and thermal shock


    Original     		PDF 2002/95/EC 18-Jul-08 vitramon vj series capacitor t dielectric

    Untitled

    Abstract: No abstract text available
    Text: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a


    Original     		PDF SDN520C 05-Nov-2012

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM90N08-10B N-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 80 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 13 @ VGS = 4.5V ID(A) 90a Typical Applications:


    Original     		PDF AM90N08-10B

    Untitled

    Abstract: No abstract text available
    Text: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock


    Original     		PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock


    Original     		PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF640a

    Abstract: p 471 mosfet
    Text: IRF640A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS= 200V


    OCR Scan     		PDF IRF640A IRF640a p 471 mosfet

    SSS5N80

    Abstract: 250M SSS5N70
    Text: N-CHANNEL POWER MOSFETS SSS5N80/70 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSS5N80/70 SSS5N80 SSS5N70 O-220F 250M

    SSS4N60

    Abstract: SSS4N55
    Text: N-CHANNEL POWER MOSFETS SSS4N60/55 FEATURES • Lower R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSS4N60/55 SSS4N60 SSS4N55 to-220f Tbm42 GD2fl471

    iran

    Abstract: SMP40N10 b0606 D5040
    Text: T e m ic SiHconix_ SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V ISR I)SS (V) 100 I d (A) 40 ;r DS(onj (£2) 0.040 TO-22ÜAB o DRAIN connected to TAB o GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF SMP40N10 O-220AB P-36665â iran SMP40N10 b0606 D5040

    irl520

    Abstract: p 471 mosfet IRL521 IRL520/IRL521
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRL520/IRL521 FEATURES • Low er R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysillcon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability


    OCR Scan     		PDF IRL520/IRL521 IRL520 IRL521 RL520/IRL521 p 471 mosfet IRL520/IRL521

    Untitled

    Abstract: No abstract text available
    Text: HS-2100RH Data Sheet Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Harris HIP2500 and the industry standard 2110 types. The low-side and


    OCR Scan     		PDF HS-2100RH HS-2100RH HIP2500 1-800-4-HARRIS

    KTK2312

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTK2312 T E C H N IC A L D A T A SILICON N CHANNEL MOSFET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS FEATURES • 4V Gate Drive. • Low Drain-Source ON Resistance • RDS ON -13mß (Typ.)


    OCR Scan     		PDF KTK2312 100//A KTK2312

    U540

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1UM-16A HIGH-SPEED SWITCHING USE FS1UM-16A OUTLINE DRAWING Dimensions in mm , 4.5 # • V dss . 8 0 0 V 1 2 3 .4) GATE DRAIN SOURCE DRAIN • TDS ON) (MAX) . 1 2 .3 0


    OCR Scan     		PDF FS1UM-16A O-220 1CH23 U540

    30N15

    Abstract: No abstract text available
    Text: RFH30N12 RFH30N15 ¡2 H a r r is N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Package Features T O -2 1 8 A C TOP VIEW • 30A, 120V and 150V • rDS on = 0 .0 75 n • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		PDF RFH30N12 RFH30N15 92CS-3 30N15

    irfbf30

    Abstract: Diode IOR 10 dc
    Text: International S Rectifier PD-9.616A IRFBF30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 900V ^DS on = 3 -7 ^ lD = 3.6A Description DATA SHEETS


    OCR Scan     		PDF IRFBF30 O-220 T0-220 lrTtQIT13tà irfbf30 Diode IOR 10 dc

    Three-terminal Off-line PWM Switch

    Abstract: EST TL431 top200yai TOP214YAI TOP202 transistor top200yai top200y AN-14 topswitch top201yai TOP203YAI
    Text: T O P 2 0 0 - 4 / 1 4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10VSJ-06 HIGH-SPEED SWITCHING USE FS10VSJ-06 OUTLINE DRAWING Dimensions in mm * -.2 -.4; • 4V DRIVE • Vdss .60V <\| 4 drain • rDS ON (MAX) . 7 0 m Q


    OCR Scan     		PDF FS10VSJ-06 O-220S