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    P 131 GB Search Results

    P 131 GB Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    GQM2195G2E131GB12D Murata Manufacturing Co Ltd High Q Chip Multilayer Ceramic Capacitors (>100Vdc) for General Purpose Visit Murata Manufacturing Co Ltd
    UPD780131GB(A)-8EU Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion) Visit Renesas Electronics Corporation
    UPD780131GB-8EU-A Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion) Visit Renesas Electronics Corporation
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    P 131 GB Price and Stock

    Toshiba America Electronic Components TLP131(GB-TPL,F)

    OPTOCOUPLER TRANS
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    DigiKey TLP131(GB-TPL,F) Reel
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    Toshiba America Electronic Components TLP131(GB-TPR,F)

    OPTOISO 3.75KV TRANS 6-MFSOP
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    DigiKey TLP131(GB-TPR,F) Cut Tape
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    Toshiba America Electronic Components TLP131(GBF)

    Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 5-Pin MFSOP - Bulk (Alt: TLP131(GB,F))
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    Avnet Americas TLP131(GBF) Bulk 150
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    Pulse Electronics Corporation GPSGB1315

    Antennas GPS MULTI-MODE 13X13MM PA NPB
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    Mouser Electronics GPSGB1315 195
    • 1 $15.82
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    Texas Instruments TPS51317RGBT

    Switching Voltage Regulators 3.3V/5Vin,6A,DCAP Mode Sync Converter
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    Mouser Electronics TPS51317RGBT
    • 1 $4.15
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    P 131 GB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RMII Specification revision 1.2

    Abstract: "RMII Specification revision 1.2" PMC-971147 RFC1042 ENT3041 RFC-1042 RMII PHY
    Text: Solo Data Sheet ENT3041 — Wire-Speed Packet Forwarding ASIC for Enterprise Networks P R E L IM IN A R Y Revision 1.1 Entridia Corporation 131 Theory, Suite 150 Irvine, CA 92612 USA Phone: 949 823-3600 Fax: (949)752-1462 Email: info@entridia.com http://www.entridia.com/


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    ENT3041 32-bits RMII Specification revision 1.2 "RMII Specification revision 1.2" PMC-971147 RFC1042 RFC-1042 RMII PHY PDF

    it27

    Abstract: 6234B ibs STME s7-300 examples interbus rs485
    Text: IBS OPTOSUB-MA/M/L-LKOPC -2MBD Optical Fiber Converter With a Data Transmission Rate of 500 kbaud or 2 Mbaud Data Sheet 6234B 6 2 3 4 A 0 0 0 07/2001 Function Please observe the Optical Fiber Installation Guidelines (DB GB IBS SYS FOC ASSEMBLY). The IBS OPTOSUB-MA/M/L-LK-OPC(-2MBD)


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    6234B PSM-LWL-RUGGED-980/1000 PSM-LWL-RUGGED-FLEX-980/ it27 6234B ibs STME s7-300 examples interbus rs485 PDF

    s7-400 output module

    Abstract: ibs s7 400 dsc optical cables color code s7-300 examples it27
    Text: IBS OPTOSUB-MA/M/R-LKOPC -2MBD Optical Fiber Converter With a Data Transmission Rate of 500 kbaud or 2 Mbaud Data Sheet 5571D 5 5 7 1 A 0 0 0 07/2001 Function Please observe the Optical Fiber Installation Guidelines (DB GB IBS SYS FOC ASSEMBLY). The IBS OPTOSUB-MA/M/R-LK-OPC(-2MBD)


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    5571D PSM-LWL-RUGGED-980/1000 PSM-LWL-RUGGED-FLEX-980/ s7-400 output module ibs s7 400 dsc optical cables color code s7-300 examples it27 PDF

    Untitled

    Abstract: No abstract text available
    Text: Finisar Productt Specificaation Multiprotoccol 80Km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3815M33xx PRODU UCT FEATU URES • Gb/s to 11.35 5Gb/s Supports 8.5G • Hot-pluggabl H le XFP footp print • RoHS-6 R Com mpliant lead-free • 100GHz ITU Grid, C-Ban


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    10Gb/s X3815M3 100GHz DW100S-2Dx DW100C-2Ax PDF

    DIRIS A40

    Abstract: transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh
    Text: 876_304_a 23/12/04 12:24 Page 1 DIRIS A40/A41 Notice d’utilisation Operating instructions - Bedienungsanleitung Istruzioni per l’uso - Gebruiksaanwijzing Instrucciones de servicio - Manual de instruções F GB SOCOMEC GROUP SWITCHING PROTECTION & UPS D


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    A40/A41 DIRIS A40 transformador transformador 120 v a 24 v DIRIS C fonction iec 62053-21 3 FASE WIRE a40 diris 3NBL socomec iec 62053-21 kwh PDF

    BUZ211

    Abstract: 30VN IEC134
    Text: BUZ211 PowerMOS transistor N AMER P H I L I P S /D I S CR ET E ObE D ^ 53=131 0014bbö 7 I T - 2 1 -1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage metal envelope.


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    BUZ211 0014bbà T-21-13 0014L7M T-39-13 BUZ211 30VN IEC134 PDF

    BUK426-1000A

    Abstract: BUK426-1000B BUK426-1OOOA BUK426-100 BUK426-1000
    Text: N AMER P H I L I P S / D I S C R E T E ESE D ^53=131 QOEDEbO S BUK426-1OOOA BUK426-1OOO B PowerMOS transìstor T- 3 ^-| GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuli-pack envelope. The device is intended for use in


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    BUK426-1OOOA BUK426-1OOO BUK426 -1000A -1000B BUK426-1000A BUK426-1000B BUK426-100 BUK426-1000 PDF

    BUK627-400A

    Abstract: BUK627-400B ha 431 transistor transistor 431 N
    Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.


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    BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N PDF

    BUZ350

    Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
    Text: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUZ350 T0218AA; T-39-13 BUZ350 IY TRANSISTOR BUZ35 at ma hi mvs PDF

    BUZ211

    Abstract: T-39-13 IEC134 T2113
    Text: PowerMOS transistor_BUZ211 N AMER P H IL IP S/ DI SC RE TE ObE D • ^53=131 0014bbö 1_ 7 ■ r - s i - 1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage


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    BUZ211 0014bbà T-21-13 BUZ211 0014b74 T-39-13 IEC134 T2113 PDF

    LWE2025R

    Abstract: Transistor 5331 class-A amplifier
    Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OOISQES 3 ■ LWE2D25R A M IC R O W A V E LINEAR POW ER T RA N SIST O R N-P-N silicon power transistor for use in a common-emitter, ciass-A amplifier up to 2,3 GHz in c.w.


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    ALWE2D25R LWE2025R LWE2025R Transistor 5331 class-A amplifier PDF

    TB1231N

    Abstract: 1231N
    Text: TOSHIBA TB1231N TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC T R1 131 N • mmr m v ■ m 'm P A L /N T S C 1CHIP IF + VCD PROCESSOR IC TB1231N is the IF & Video processing IC for PAL/NTSC color TV system. This IC demodulates PAL/NTSC PIF, SIF and composite video signal to R /G /B primary colors and


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    TB1231N TB1231N TA1275Z 1231N PDF

    IEC134

    Abstract: LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code
    Text: -1-1- N AMER PHILIPS/DISCRETE ObE D ^53=131 ÜQ150G1 I LV2327E40R r- 33-£>? MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a com m on-em itter class-A linear wideband power am plifier from 2 ,3 to 2 ,7 G Hz. Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide


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    kLi53' LV2327E40R GD150G4 7z88738 7z88737 IEC134 LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code PDF

    P 131 GB

    Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
    Text: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode


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    315CTV713) B7-40 P 131 GB skiip 632 gb 120 315CTV713 skiip gb 120 PDF

    bsm10gd100dn1

    Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
    Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2


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    E-6288 BSM10GD100DN1 C67079-A1000-A6 C67079-A1040-A11 C67079-A1040-A17 C67079-A1001-A6 C67079-A1041-A5 C67079-A10436 E-6327 BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52 PDF

    TO-131 Package

    Abstract: No abstract text available
    Text: group Data Sheet April 1998 Lucent Technologies Bell Labs Innovations 131-Type Long-Wavelength PIN Photodetector Features Wavelength: 1.1 |a,m— 1.6 |a,m Planar structure for high reliability Low-profile, 8-lead DIP or 3-lead, coaxial package equivalent pinout


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    131-Type 131-T HPC-108 E-2000 TO-131 Package PDF

    H-17

    Abstract: H-18 H-19 H-22 TT 2206
    Text: - 208 - I- 7 / ^ x 5 ' • t ' / i - i = y ' 3 > N í - + * A- I GB T ) i > ^ > X à > h • 9 -f ~f MGI-1 MGi-2 9 ° -O E 1 1 ¿ i G (B ) ?È 1 . Te = fi S g VcES V GE S k ft m c CP ( , (1ms) (V ) (V ) (A ) (A ) n ( T . =25°C) (A ) 1 FM Pc (1ms) (a n


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    H-101 H-17 H-18 H-19 H-22 TT 2206 PDF

    51001Z

    Abstract: siemens VFT i314 laserdiode application
    Text: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power


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    51001Z 51QQ2Z Q62702-P3013 51001Z siemens VFT i314 laserdiode application PDF

    MARKING GA

    Abstract: A779 baw78c
    Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8


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    62702-A675 62702-A677 62702-A779 62702-A109 MARKING GA A779 baw78c PDF

    bgy47

    Abstract: BGY47A BGY47F IEC134
    Text: N AMER PHILIPS/DISCRETE GbE D • ^53=131 0G13S7Ô 0 DEVELOPMENT DATA BGY47 SERIES This data ihM t contains advaoc« Information and specifications are subject to chtnge without rvottc«. 86D 0 1 0 4 0 D 7 " -7 y -Ô ^ -Ô / U.H.F. AMPLIFIER MODULES A range o f U .H .F. amplifier modules designed fo r use in portable transmitters operating from a 9 ,6 V


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    0G13S7S BGY47 BGY47A BGY47F OT-181. BGY47A IEC134 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. I F L - L X 8 1 11 GBA A E.C.N. NUMBER AND REVISION COMMENTS DATE 04.1 2.07 E.C.N, # 1 1 1 4 9 . 3 .3 5 .1 3 2 MAX ELECTRO-OPTICAL SPECIFICATIONS OPERATING VOLTAGE VAC OR VDC: 6 .5 (.2 5 6 ) MAX 1 .5 H .O CURRENT DRAW DESIGN VOLTS:


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    IFL-LX81 11GBA MIL-E-54Ã MIL-X81 DECL05URE PDF

    Untitled

    Abstract: No abstract text available
    Text: LSH33 32-bit Barrel Shifter with Registers D E V IC E S IN C O R P O R A T E D [FÊftTÜRES ''•:' DESCRIPTION □ 32-bit Input, 32-bit Output Multi­ plexed to 16 Lines □ Full 0-31 Position Barrel Shift Capability □ Integral Priority Encoder for 32-bit


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    LSH33 32-bit 32-bit MIL-STD-883, 68-pin PDF

    GB 44-706

    Abstract: 44-706 P 131 GB g8hz GB 44706A G2010 G-45706A 13302 GA44.706A M6HZ
    Text: i VR TYPES v eff recommandée V RRM V 0,7 A * GA GB GD GF t amb = 80°C tamb = 80°C (A) (A) 10 ms Diodes @ \/ r 25°C IfJA) (A) 125°C ImA) TYPES Q 100 200 400 600 GO 13.302 GF 13.302 GH 13.302 2,7 A 50 80 150 250 0,3 1,25 4 10 CONTROLLED AVALANCHE SERIE


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    10/is) G-12302 G-20602A G-22602A G-26702A G-27702A G-44706A G-45706A GB 44-706 44-706 P 131 GB g8hz GB 44706A G2010 G-45706A 13302 GA44.706A M6HZ PDF

    mg75

    Abstract: H-17 H-18 H-19 H-22 06a3 M4A1
    Text: - 208 - I- 7 / ^ x 5 ' • t ' / i - i = y ' 3 > N í - + * A- I GB T ) i > ^ > X à > h • 9 -f ~f MGI-1 MGi-2 9 ° -O E 1 1 ¿ i G (B ) ?È 1 . Te = fi S g VcES V GE S k ft m c CP ( , (1ms) (V ) (V ) (A ) (A ) n ( T . =25°C) (A ) 1 FM Pc (1ms) (a n


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    H-101 mg75 H-17 H-18 H-19 H-22 06a3 M4A1 PDF