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    P 1000V DIOD Search Results

    P 1000V DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    P 1000V DIOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2CL25

    Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
    Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A


    Original     		PDF LL4148 500mA 1N4148B/P LL4001 1N4001 EM516 1N5391 1N5399 1N5400 1000Ifm 2CL25 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75

    Untitled

    Abstract: No abstract text available
    Text: 2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    Original     		PDF APT2x100DQ100J APT2x101DQ100J E145592 APT2x101DQ100J APT2x100DQ100J OT-227 OT-227

    APT2X101DQ60J

    Abstract: No abstract text available
    Text: 2 3 2 3 2 1 4 1 Anti-Paralle l APT2X100D100J 4 3 1 7 2 TO -2 4 P aralle l APT2X101D100J S "UL Recognized" IS OT OP file # E145592 APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    Original     		PDF APT2X100D100J APT2X101D100J E145592 APT2X101D100J OT-227 OT-227 APT2x100DQ60J APT2x101DQ60J APT2X101DQ60J

    APT2X101DQ60J

    Abstract: No abstract text available
    Text: 2 3 1 4 2 1 Anti-Paralle l APT2X100D100J 3 4 2 3 1 7 2 TO -2 4 P aralle l APT2X101D100J S "UL Recognized" IS OT OP file # E145592 APT2X101D100J APT2X100D100J 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    Original     		PDF APT2X100D100J APT2X101D100J E145592 OT-227 APT2x100DQ60J APT2x101DQ60J APT2X101DQ60J

    Untitled

    Abstract: No abstract text available
    Text: 2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS


    Original     		PDF APT2x100DQ100J APT2x101DQ100J E145592 APT2x101DQ100J APT2x100DQ100J OT-227

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1

    MCT harris

    Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
    Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    Original     		PDF MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v

    "mos controlled thyristor"

    Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v

    IC 7805

    Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
    Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)


    OCR Scan     		PDF 1N4001 1N4007 0V-1000V) 1N5391 1N5399 1N5400 1N5408 S6A05 IC 7805 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)

    RHRP1580

    Abstract: rp1580
    Text: CH H A R R IS RHRP1570, RHRP1580, RHRP1590, RHRP15100 15A, 700V - 1000V Hyperfast Diodes Aprii 1995 Package Features • Hyperfast with Soft Recovery . <60ns • Operating Tem p eratu re. +175°C • Reverse Voltage Up T o . ,1000V JEDEC TO-220AC


    OCR Scan     		PDF RHRP1570, RHRP1580, RHRP1590, RHRP15100 O-220AC RHRP1590 TA49062) RHRP1580 rp1580

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		PDF MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226

    apt1004ran

    Abstract: 1004RAN 1004R2AN 10ILU 1004R2 APT904R2AN APT1004R2AN APT904RAN APT 1004RAN
    Text: ADVANCFD P Oü l F R TECHNOLOGY od MT E X o \ D WÊ O O OO S DM K 35D M AVP A d va n c ed P o w er - p 3°i \3 Technology O S P n W P R m a c ix/TM r U W c n M O S IV APT1004RAN APT904RAN APT1004R2AN APT904R2AN 1000V 900V 1000V 900V 3.9A 3.9A 3.5A 3.5A 4.00 £2


    OCR Scan     		PDF APT1004RAN APT904RAN APT1004R2AN APT904R2AN 904RAN 1004RAN 904R2AN 1004R2AN T0-204AA) 1004R2AN 10ILU 1004R2 APT 1004RAN

    443h

    Abstract: No abstract text available
    Text: ADVANCED POWER TECHNOLOGY . . « o „ , tm POWER MOS IV blE D • QSSTTOS 443 H A V P ADVANCED P o w er Te c h n o l o g y APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 1000V 900V 1000V 900V 9.5A 1.10Q 9.5A 1.1 OQ 9.0A 1.30Q 9.0A 1.30D N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1001R1HN APT901R1HN APT1001R3HN APT901R3HN 901R1HN 1001R1HN 901R3HN 1001R3HN LinearPT1001R1/1001R3HN RGURE11, 443h

    APT901R3BN

    Abstract: APT1001R3BN
    Text: O D Ô s A d van ced P o w er Te c h n o l o g y GIí'WtH MOS iUä APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 1000V 900V 1000V 900V 10.5A 10.5A 10.0 A 10.0A 1.100 1.100 1.300 1.300 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN /1001R3BN O-247AD

    APT1002RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR APT1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1002RBNR APT1002R4BNR APT1002RBNR APT1002R4BNR STD-750 O-247AD

    Untitled

    Abstract: No abstract text available
    Text: O A dvanced P o w er Te c h n o lo g y D APT1001R1BN 1000V 10.5A 1.10Í2 APT901R1BN 900V 10.5A 1.10D APT1001R3BN 1000V 10.0A 1.30Q APT901R3BN 900V 10.0A 1.30Q O S POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001R1BN APT901R1BN APT1001R3BN APT901R3BN 901R1BN 1001R1BN 901R3BN 1001R3BN APT1001R1/901R1/1001R3/901R3BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d va n ced P o w er Te c h n o l o g y O D APT1001RBNR 1000V 11.0A 1.0012 APT1001R1BNR 1000V 10.5A 1.100 O S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol All Ratings: T c = 2 5 °C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD 0001S7T

    1004R2BN

    Abstract: APT904RBN Apt904r2bn 1004rbn
    Text: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN APT1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1004RBN APT904RBN APT1004R2BN APT904R2BN 1004RBN 904R2BN 1004R2BN 904RBN /904R/1004R2/904R2BN 10OmS

    210 RBN

    Abstract: 1001r1bn 1001RBN NA 1001 APT1001RBNR OA 10 diode APT1001 APT1001R1BNR 1001R1BNR
    Text: ADVANCED P o w er Te c h n o l o g y O D O S APT1001RBNR 1000V 11.0A 1.00Q APT1001R1BNR 1000V 10.5A 1.10ÍÍ POWER MOS IV® AVALANCHE RATED N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATINGS Symbol VDSS •d ' dm V GS VGSM PD t j ,t stg


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR O-247AD 210 RBN 1001r1bn 1001RBN NA 1001 OA 10 diode APT1001 1001R1BNR

    APT1001R1AN

    Abstract: APT1001R3AN
    Text: AT>VANCFT> POUFR TECHNOLOGY 0 2 5 7 1 0 1 O O O O M I b 424 M A V P HIE î ADVANCED P o w er Te c h n o l o g y APT1001R1AN 1000V 9.5A 1.10 £i APT901R1 AN 900V 9.5A 1.10 Q. APT1001R3AN 1000V 8.5A 1.30 £2 POWER MOS IV APT901R3AN 900V 8.5A 1.30 n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT1001R1AN APT901R1 APT1001R3AN APT901R3AN 901R1AN 1001R1 901R3AN 1001R3AN O-204AA)

    BYP100

    Abstract: No abstract text available
    Text: SIEMENS B Y P 100 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM *FRMS B Y P 100 1000V 8A *rr 55ns Package Ordering Code TO -218AD C67047-A2254-A2 Maximum Ratings Parameter Symbol Values Tc = 90 °C, D = 0.5


    OCR Scan     		PDF -218AD C67047-A2254-A2 BYP100

    APT902R4BN

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q APT1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF AFT1002RBN APT902RBN APT1002R4BN APT902R4BN 902RBN 1002RBN 902R4BN 1002R4BN G21bc APT1002R/902R/1002R4/902R4BN APT902R4BN

    APT1001RBNR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y • O D O S APT1001RBNR 1000V 11.0A 1.000 APT1001R1BNR 1000V 10.5A 1.10D POWER MOS IV< UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm V GS VGSM PD All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT1001RBNR APT1001R1BNR APT1001R/1001R1BNR O-247AD