murata vco module
Abstract: LQP03TNR12J02 LQP03TNR10J02 digital tv tuner LQP03TN82NJ02 120NH
Text: September 13，2007 Company: Murata Manufacturing Co., Ltd. Exchange Listing: 6981 TSE1, OSE1 Location of head office: 1-10-1,Higashikotari, Nagaokakyo-shi, Kyoto President/ Statutory Representative Director: Tsuneo Murata Contact: Yukio Oshima, Corporate Communications Department
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100nH
120nH
murata vco module
LQP03TNR12J02
LQP03TNR10J02
digital tv tuner
LQP03TN82NJ02
120NH
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TB62708N
Abstract: TB62708
Text: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62708N 16 Bit Constant Current LED Source Driver with Shift Register and Latch Functions Product Description: The TB62708N is specifically designed for LED display applications. The Bi-CMOS device has
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TB62708N
TB62708N
5-90mA
98-4LEDS
TB62708
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Untitled
Abstract: No abstract text available
Text: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62701AN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62701AN is specifically designed for LED display applications. The Bi-CMOS device has
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TB62701AN
TB62701AN
5-50mA
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ac dc led constant current driver
Abstract: No abstract text available
Text: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62701AN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62701AN is specifically designed for LED display applications. The Bi-CMOS device has
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TB62701AN
TB62701AN
5-50mA
98-4LEDS
ac dc led constant current driver
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ESR500
Abstract: No abstract text available
Text: OSHINO LAMPS Lighted Products since 1931 Product ESR 50020 discrete diodes 5 mm color red product-catalog discrete diodes 5 mm color red part no ESR 50020 peak wavelength λp [nm] 660 Iv [mcd] @ 20 mA min 1200 Iv [mcd] @ 20 mA typ 2000 radiation angle 2 φ ½
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ESR50020
ESR500
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Untitled
Abstract: No abstract text available
Text: OSHINO LAMPS Lighted Products since 1931 Product SUA 30020 discrete diodes 3 mm color amber product-catalog discrete diodes 3 mm color amber part no SUA 30020 peak wavelength λp [nm] 605 Iv [mcd] @ 20 mA min 1500 Iv [mcd] @ 20 mA typ 2500 radiation angle 2 φ ½
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SUA30020
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Untitled
Abstract: No abstract text available
Text: OSHINO LAMPS Lighted Products since 1931 Product SUR 50010 discrete diodes 5 mm color red product-catalog discrete diodes 5 mm color red part no SUR 50010 peak wavelength λp [nm] 641 Iv [mcd] @ 20 mA min 4400 Iv [mcd] @ 20 mA typ 7400 radiation angle 2 φ ½
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SUR50010
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TA7805AP
Abstract: TA7812AP L7809CV L78M05ACS L78L05CD TA7815AP TA7809AP L78L33A L78L33 L4941BV
Text: VOLTAGE REGULATORS CROSS REFERENCE: OSHIBA VS ST Description 5V LOW DROP T j o C Io ut (A) Tol (%) -40 to 150 1.5 2 Package T OSHIBA TO-220 ST L4940V5 8.5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V85 10V LOW DROP -40 to 150 1.5 2 TO-220 L4940V10 12V LOW DROP
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O-220
L4940V5
L4940V85
L4940V10
L4940V12
L4941BDT
OT-194
TA7805AP
TA7812AP
L7809CV
L78M05ACS
L78L05CD
TA7815AP
TA7809AP
L78L33A
L78L33
L4941BV
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rfid circuit diagram
Abstract: LXMS31 murata LXMS31 matching UHF RFID tag circuit diagram of RFID RFID tag UHF rfid antenna chip antenna rfid UHF antenna terminology murata 1010
Text: May，29th，2008 Company: Murata Manufacturing Co., Ltd. Exchange Listing: 6981 TSE1, OSE1 Location of head office: 1-10-1,Higashikotari, Nagaokakyo-shi, Kyoto President/ Statutory Representative Director: Tsuneo Murata Contact: Yukio Oshima, Corporate Communications Department
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May29th2008
-LXMS31
LXMS31
rfid circuit diagram
murata LXMS31
matching UHF RFID tag
circuit diagram of RFID
RFID tag
UHF rfid antenna
chip antenna rfid UHF
antenna terminology
murata 1010
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TB62706BN
Abstract: No abstract text available
Text: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62706BN/BF TB62706BN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62706BN/BF is specifically designed for LED display applications. The Bi-CMOS device has
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TB62706BN/BF
TB62706BN
TB62706BN/BF
5-90mA
SDIP24-P-300
TB62706B
98-4LEDS
TB62706BN
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T41G
Abstract: No abstract text available
Text: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 OSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed
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10172S2
T-41-G7
55/im
10/125/tm)
T-41-50
1000o
50/125pm)
T41G
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TC514170BJ-80
Abstract: tc514170 TC514170BJ80
Text: OSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques
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TC514170BJ-70/80
TC514170BJ
TC514170BJ-80
tc514170
TC514170BJ80
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Untitled
Abstract: No abstract text available
Text: OSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit
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TC514800AJ/AZ/AFT-70/80
TC514800AJ/AZ/AFT
TC514800A
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TC5116160
Abstract: A461
Text: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit
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TC5116160AI/AFT-60/70/80
TC5116160AJ/AFT
TC51161610AJ/AFT-60/70/80
A8R--A11R
TC5U6160AJ/AFT-60/70/80
TC5116160
A461
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TC88411F
Abstract: TC88411
Text: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA OSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29_
TC58A040F
OP28-P-450
TC58A040F--30*
TC88411F
TC88411
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TC5816
Abstract: TC5816AFT
Text: INTEGRATED 'OSHIBA CIRCUIT TECHNICAL DATA OSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ARSILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816AFT--35
TC5816AFT
TC5816AFT--36
TC5816AFT
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TSOP-54P
Abstract: No abstract text available
Text: INTEGRATED 'OSHIBA OSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTI-85L TC554161 FTI-10L DATA SILICON GATE CM O S 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION I’he TC 554l6lFn is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16
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TC554161
FTI-85L
FTI-10L
554l6lFn
304-bit
TC554161FTI-L--
TSOP-54P
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SH400N25B
Abstract: SH400L25B SH400R25B 40115
Text: 9097250 T OSHI BA <DI S C R E T E / O P T O > 39C 0 2 3 0 8 D.T^aST-IS HIGH-SPEED THYRISTOR OSHIBA {D ISCR ET E/OPTO} 1300V 400A SH400R25B ]> F | T O ^ S a DOOSBOñ 2 U n it in mm M A X IM U M RATINGS RA TIN G SY M B O L C H A R A C T E R IS T IC SH400L25B
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SH400R25B
SH400L25B
SH400N25B
200X103r
VrS200V
SH400N25B
SH400R25B
40115
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25FXF12
Abstract: toshiba 3000v 25FXF12 25QF11 STL 1550 25LF11 toshiba 3-12cia 40175 25NF11 AC32 TOSHIBA RECTIFIER
Text: 9097250 OSHIBA <DIS C R E T E / O P T O 1200V _ 3.9 P. T_- ~ ô^\ ~ n IL9. ° E CONTROLLED AVALANCHE RECTIFIER Ih DE I ^ G T T E S D DDOEEMT r OSHIBA {DISCRETE/OPT0} 25QF11 r _ Unit in BBt 25A M A XIM U M R A TIN G S C H A R A C T E R IS T IC SY M BO L
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DDDE21H
25QF11
25LF11
25NF11
10//s)
25NTIC
3-12C1Ã
25FXF12
toshiba 3000v 25FXF12
25QF11
STL 1550
25LF11
toshiba 3-12cia
40175
AC32
TOSHIBA RECTIFIER
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74HC inverter tri-state output
Abstract: TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G
Text: OSHIBA ASIC TO SH IB A A M ER ICA E LE C T R O N IC CO M PO N EN TS, INC. IEC 1 4 1990 TC11L CMOS Gate Array TC14L CMOS Gate Array These tw o gate array fam ilies provide a unique solution for designs which have a high ratio of pin count to gates. T oshiba’s optim ized assem bly tech n o lo g y allow s the use of
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TC11L
TC14L
64-bit
MAS-0095/9-90
74HC inverter tri-state output
TC140G
toshiba tc110g
TC14L010
74HC buffer tri-state output
bt12
74hc* open drain buffer
FP144
TC11L003
TC110G
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Untitled
Abstract: No abstract text available
Text: LCD M odule T e c h n ica l S p e c ific a tio n r ^Edition Sep 1 ,2 0 0 6 Final R evision T- Type No. 51756 D 121 J-FW -A-AEN * OPTREX CORPORATION Apprroved :S h jg e o S u z u k j QUALITY ASSURANCE DIVISION Checked : j oshiyuki O kam oto MOBILE,CONSUMER&INDUSTRY DESIGN DIV.
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T-51756D121J-FW-A-AEN
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Untitled
Abstract: No abstract text available
Text: OSHIBA TC514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit
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TC514100ASJL/AFIL60/70/80
TC514100A
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Untitled
Abstract: No abstract text available
Text: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as
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------------TC514400ASJI/AFH/ATRL60/70/80
TC514400ASJL/AFTL/ATRL
14400A
512K54
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EP-GW
Abstract: No abstract text available
Text: 54£ 5 OSHIBA UC/UP OSHIBA • OOlRb'ïb bT2 ■ T0S3 TM P47C662/862 UN D ERD EVELO PM EN T CM OS 4-BIT M ICRO CO N TRO LLER TMP47C662N, TMP47C862N The 47C662/862 have extend ed I/O ports, A/D co n verte r, p ro g ram m ab le pulse g e n e ra to r, and hig h
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P47C662/862
TMP47C662N,
TMP47C862N
47C662/862
TLCS-470
TMP47C662N
TMP47C862N
8192x8-bit
SDIP64
244jis
EP-GW
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