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    14400A Search Results

    14400A Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    51722-10214400ABLF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 2P 144S Right Angle Header. Visit Amphenol Communications Solutions
    51966-10014400ABLF Amphenol Communications Solutions PwrBlade®, Power Connectors, 144S Right Angle Header, Solder To Board Visit Amphenol Communications Solutions
    51967-10014400AALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 144S Vertical Receptacle. Visit Amphenol Communications Solutions
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    14400A Price and Stock

    Sensata Circuit Breakers PP11-4-4.00A-OC-V

    CIR BRKR MAG-HYDR
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    DigiKey PP11-4-4.00A-OC-V Bulk 2 1
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    RS PP11-4-4.00A-OC-V Bulk 12 Weeks 3
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    Master Electronics PP11-4-4.00A-OC-V 36
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    Sager PP11-4-4.00A-OC-V 1
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    Sensata Circuit Breakers R11-4-4.00A-B06CV-V

    CIR BRKR MAG-HYDR 4A ROCKER
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    DigiKey R11-4-4.00A-B06CV-V Bulk 1 1
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    RS R11-4-4.00A-B06CV-V Bulk 12 Weeks 3
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    Master Electronics R11-4-4.00A-B06CV-V 8
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    Sensata Circuit Breakers R11-4-4.00A-R01CV-V

    CIR BRKR MAGHYDR 4A 250VAC 65VDC
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    DigiKey R11-4-4.00A-R01CV-V Tray 1 1
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    Master Electronics R11-4-4.00A-R01CV-V
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    Skyworks Solutions Inc 515ACAM614400AAG

    XTAL OSC VCXO 6.1440MHZ LVPECL
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    Mouser Electronics 515ACAM614400AAG
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    Skyworks Solutions Inc 515ACAM614400AAGR

    XTAL OSC VCXO 6.1440MHZ LVPECL
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    DigiKey 515ACAM614400AAGR Reel 1,000
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    14400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DCR1080G22

    Abstract: DCR1080G18 DCR1080G20
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.3 August 2007 LN25531 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs * Higher dV/dt selections available


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    PDF DCR1080G22 DS5227-1 LN25531) 4400A DCR1080G20 DCR1080G18 DCR1080G22 DCR1080G18 DCR1080G20

    dcr1080

    Abstract: No abstract text available
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.0 FEBRUARY 2005 LN23798 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives


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    PDF DCR1080G22 DS5227-1 LN23798) 4400A DCR1080G22 DCR1080G20 DCR1080G18 dcr1080

    Untitled

    Abstract: No abstract text available
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.1 May 2005 LN23941 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2200V 1083A 14400A 1500V/µs 500A/µs High Power Drives


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    PDF DCR1080G22 DS5227-1 LN23941) 4400A DCR1080G22 DCR1080G20 DCR1080G18

    Magnetic Field Sensor

    Abstract: max 232 DM-232
    Text: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is


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    PDF DM-232 DM-232 M-118 4400A/m Magnetic Field Sensor max 232

    DCR1080G22

    Abstract: dcr1080
    Text: DCR1080G22 Phase Control Thyristor Preliminary Information DS5227-1.2 JULY 2006 LN24663 FEATURES • Double Side Cooling • High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS • High Power Drives • High Voltage Power Supplies


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    PDF DCR1080G22 DS5227-1 LN24663) 4400A DCR1080G22 DCR1080G20 DCR1080G18 dcr1080

    ic 4800

    Abstract: FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom


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    PDF FZ2400R17KF6B2 ic 4800 FZ2400R17KF6B2 FZ2400R17KF6-B2 fz 79 1500 4500 igbt

    ic 4800

    Abstract: IGBT module FZ 1200
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 2400 R 17 KF6 B2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung


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    PDF FZ246B2 ic 4800 IGBT module FZ 1200

    95A sensor hall

    Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
    Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.


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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14400A/AL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 14400A/AL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the 14400A/AL is OKI's CMOS silicon gate process technology.


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    PDF 4400A/AL 576-Word MSM514400A/AL cycles/16ms, cycles/128ms MSM514400A/AL b724240

    814400a

    Abstract: MB814400A
    Text: March 1992 Edition 1.0 DATA SHEET FUJITSU : M B 8 14400A-60/-70/-80 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu M B 14400A is a fully decoded C M O S Dynamic RA M D R A M that contains 4,194,304 memory cells accessible in 4 -b it increments. T h e M B 14400A features a f a s t pag e’ mode of


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    PDF 4400A-60/-70/-80 14400A 024-b 14400Ain F26001S MB814400A-60 MB814400A-70 MB814400A-80 814400a MB814400A

    AZL-70

    Abstract: No abstract text available
    Text: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the


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    PDF TC514400APL/AJL/ASJL/AZL 300/350mil) tolTC514400APL/AJL/ASJIVAZL. a512K TC514400APL/AJ L/AZL-70, L/AZL-80 AZL-70

    514400A

    Abstract: M514400A 514400AZ
    Text: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory 14400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x


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    PDF HM514400A ----------------HM514400AL HM514400ASL 576-Word 20-pin 514400A M514400A 514400AZ

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


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    PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit


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    PDF TC514100ASJL/AFIL60/70/80 TC514100A

    tc511000aj

    Abstract: No abstract text available
    Text: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 14400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as


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    PDF THM362020AS/ASG -60/70/S0 THM362020A TC514400ASJ TC511000BJ/AJ THM362020AS/ASG THM362020AS/ASQ-60 THM362020AS/ASG-70 4400A tc511000aj

    mt4c4001

    Abstract: MT4C4001-6 TC51440 20PIN MT4C4001-10 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10
    Text: 235 - 4M CMOS X íiSícffl m % ît £ °C TRAC max (ns) TRCY (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 4) Í TCAD min (ns) 2 0 P I N ¡if. TAH min (ns! TP min (ns) TWCY min (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (raA) À I DD STANDBY


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    PDF 20PIN MN424400ASJ/AL/ATT/ATTR-07 IK/128 MN424400ASJ/AL/ATT/ATTR-08 MT4C4001-10 IK/16 TC514402AP/AJ/ASJ-70 TC514402AP/AJ/ASJ-80 mt4c4001 MT4C4001-6 TC51440 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10

    ZIP20-P-400A

    Abstract: toshiba a75 TSOP26-P-300 TC514400ASJ
    Text: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION THE 14400ASJ/AZ/AFT is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The 14400ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced


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    PDF TC514400ASJ/AZ/AFT-60/70/80 TC514400ASJ/AZ/AFT TC514400/ASJ/ 512KX4 cJOc5724Ã ZIP20-P-400A toshiba a75 TSOP26-P-300 TC514400ASJ

    EJ350

    Abstract: No abstract text available
    Text: O K I semiconductor 14400A/AL_ 1,048,576-Word x 4-Bit DYNAM IC RAM: FA ST PAG E MODE T Y P E GENERAL DESCRIPTION The M SM 14400A/A L is a new g en e ra tio n dynam ic RAM o rg a n ize d as 1,048,576-word x 4-bit. Th e te c h n o lo g y used to fa b ric a te th e M SM 5 1 4 4 0 0 A /A L is O K I's CM O S s ilico n g a te process


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    PDF MSM514400A/AL_ 576-Word 14400A/A 576-w 26-pin 20pin uMSM514400A/AL MSM514400A/AL" EJ350

    Untitled

    Abstract: No abstract text available
    Text: 1 ,0 4 8 ,5 7 6 W O R D PRELIMINARY y . 4 BIT D Y N A M I C R A M D ESC R IP TIO N The 14400AP/AJ/ASJ/AZ is the ne’.v generation dynamic HAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


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    PDF TC514400AP/AJ/ASJ/AZ TC514400A 3QQ/350mil) TC514400AP/AJ/ASJ/AZ. a512K TC514400AP/AJ/ASJ/AZâ TC514400AP/AJ/ASJ/AZ-80

    512kx4

    Abstract: SOJ26-P-350 1024X1024X4
    Text: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The 14400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well


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    PDF 4400AP/AJ/ASJ/AZ-80 P/AJ/ASJ/AZ-10 TC514400AP/AJ/ASJ/AZ 300/350mil) 512KX4 TC514400AP/AJ/ASJ/AZ-- TC514400AP/AJ/ASJ/AZ-80 TC514400AP/AJ/ASJ/AZ-10 SOJ26-P-350 1024X1024X4

    Untitled

    Abstract: No abstract text available
    Text: 14400A S e rie s -14400AL Series Low Power Version 14400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 14400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi 14400A is a C M O S dynamic RAM organized 1,048,576 word x


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    PDF HM514400A --------------------------HM514400AL HM514400ASL 576-Word 514400AJ/AU/ALSJ 20-pin

    56G1

    Abstract: HB56G18B-8A HM514400
    Text: HB56G18 Series 1,048,576-Word x B-Bit High Density Dynamic RAM Module • DESCRIPTION The H856G18 is a 1M x 8 dynamic RAM module, mount­ ed two 4 Mbit DRAM 14400AS sealed in SOJ pack­ age. An outline of the HB56G18 is 30-pin single in-line pack­ age (socket type).


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    PDF HB56G18 HB56G18B-7A HB56G18B-8A HB56G18B-10A 30-pin HB56G18GB-7A HB56G18GB-8A HB56G18GB- 576-Word 56G1 HM514400

    HY514400-80

    Abstract: hitachi 1k x 4 HM514402 HM514402A-7 20PIN HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001
    Text: - 233 4M CMOS w % tt £ CC TRAC max ns) A D y n a m i c &• > y n R A M (1 0 4 8 5 7 6 x 4 ) tt 2 0 P I N m 7, TRCY min (ns) TCAD min (ns) TAI-i min (ns) TP mi n (ns) TCCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) Â I DD STANDBY


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    PDF 20PIN HM514400AJ/S/Z/17R-Ã HM514400AJ/S/Z/T/R-7 HM514400AJ/S/Z/T/H-8 IK/16 KM44C1000A-10 KM44C1000AL-7 IK/128 KM44C1000AL-8 HY514400-80 hitachi 1k x 4 HM514402 HM514402A-7 HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: . - - IU 11 14400APL/AJL/ASJL/AZL-70, 14400APL/AJL/ASJL/AZL-80 14400APL/AJL/ASJL/AZL-10 PRELIMINARY 1,048,576 WORD x 4 BIT DYNAM IC RAM DESCRIPTION The 14400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 14400APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as


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    PDF TC514400APL/AJL/ASJL/AZL-70, TC514400APL/AJL/ASJL/AZL-80 TC514400APL/AJL/ASJL/AZL-10 TC514400APL/AJL/ASJL/AZL 300/350mil) TC514400APL/AJL/ASJL/AZL. a512K