wiring diagram dol motor starter
Abstract: 3 phase motor soft starter circuit diagram, ABB dol starter autotransformer starter 1TGC 901007 C0201 INSUM Technical Information M2BA315SMC wiring diagram ABB motor starter star delta timer starter diagram star delta starter km insum
Text: Protect IT – MNS Motor Management INSUM MCU Parameter Description Version 2.1 ABB INSUM MCU Parameter Description Software revision 2.1 ® INSUM MCU Parameter Description Software Version 2.1 1 1TGC 901025 M0201 Edition December 2001 ® INSUM MCU Parameter Description
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M0201
M0201
wiring diagram dol motor starter
3 phase motor soft starter circuit diagram, ABB
dol starter
autotransformer starter
1TGC 901007 C0201 INSUM Technical Information
M2BA315SMC
wiring diagram ABB motor starter
star delta timer starter diagram
star delta starter km
insum
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470NR-14D
Abstract: OS 430 NR - 14d, VARISTOR OS 430 NR, VARISTOR 470NR 470NR-10D 430NR-14D 120NR-10D 240NR-14D 390NR-10D 270NR
Text: ZR・NR series Radial Type ZR・NR Series Radial type Disk type general use ZR type (Low voltage) and NR type (Medium/High Voltage) are for protection of electronics and control eqiupments from surge and noise. 1. Features ・Superior nonlineality of voltage to maintain low limiting voltage.
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120NR-20D1800NR-20D)
1800NR
1800NR
1100NR
1000NR
910NR
820NR
750NR
680NR
620NR
470NR-14D
OS 430 NR - 14d, VARISTOR
OS 430 NR, VARISTOR
470NR
470NR-10D
430NR-14D
120NR-10D
240NR-14D
390NR-10D
270NR
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470NR-14D
Abstract: OS 430 NR - 14d, VARISTOR 470NR 470NR-10D OS 470 VARISTOR OS 430 NR, VARISTOR 240NR-14D 390NR-10D 22ZR-10D 330NR-10D
Text: ZR䊶NR series Radial Type ZR䊶NR Series Radial type Disk type general use ZR type (Low voltage) and NR type (Medium/High Voltage) are for protection of electronics and control eqiupments from surge and noise. 1. Features 䊶Superior nonlineality of voltage to maintain low limiting voltage.
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120NR-20D1800NR-20D)
1800NR
1800NR
1100NR
1000NR
910NR
820NR
750NR
680NR
620NR
470NR-14D
OS 430 NR - 14d, VARISTOR
470NR
470NR-10D
OS 470 VARISTOR
OS 430 NR, VARISTOR
240NR-14D
390NR-10D
22ZR-10D
330NR-10D
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earth leakage circuit
Abstract: earth leakage diagram CURRENT TRANSFORMER Earth leakage SL7101
Text: SL7101 EARTH LEAKAGE CURRENT DETECTOR Description The SL7101 is designed for use in earth leakage circuit interrupters for operation directly of the AC Line in breakers. It contains pre regulator, main regulator, after regulator, differential amplifier, level comparator, latch circuit. The input in
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SL7101
SL7101
00V/200V
00V/200V
1-28V.
earth leakage circuit
earth leakage diagram
CURRENT TRANSFORMER
Earth leakage
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13612OR
Abstract: 13612OR-S02 Inphi NRZ 13612OR-S02QFN
Text: 13612OR 13 Gbps OR/NOR/AND/NAND Data Sheet Inphi 13612OR Applications • • • • • High-speed up to 13 GHz digital logic High-speed (up to 13 Gbps) serial data transmission systems Broadband test and measurement equipment NRZ-to-RZ/RH conversion Differential encoding for optical DPSK and duobinary transmitter modules
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13612OR
13612OR
13612OR-S02
Inphi NRZ
13612OR-S02QFN
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13612OR-S02
Abstract: 13613ORS02QFN inphi 13613OR-S02QFN Inphi NRZ optical duobinary 13612
Text: 13613OR 13 Gbps OR/NOR/AND/NAND Data Sheet Inphi 13613OR Applications • • • • • High-speed up to 13 GHz digital logic High-speed (up to 13 Gbps) serial data transmission systems Broadband test and measurement equipment NRZ-to-RZ/RH conversion Differential encoding for optical DPSK and duobinary transmitter modules
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13613OR
13613OR
13612OR-S02
13613OR-S02.
13613ORS02QFN
inphi
13613OR-S02QFN
Inphi NRZ
optical duobinary
13612
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TRANSISTOR SMD MARKING CODE n10
Abstract: transistor N14 172 smd transistor marking P7 TSA5523M
Text: INTEGRATED CIRCUITS DATA SHEET TSA5523M 1.4 GHz I2C-bus controlled multimedia synthesizer Product specification File under Integrated Circuits, IC02 1996 Dec 17 Philips Semiconductors Product specification 1.4 GHz I2C-bus controlled multimedia synthesizer
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TSA5523M
15-bit
TSA5523M/C1
OT266
TRANSISTOR SMD MARKING CODE n10
transistor N14 172
smd transistor marking P7
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S9737 series 1024 x 1024 pixels, front-illuminated FFT-CCDs S9737 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9737 series also features low noise and low dark current MPP mode operation . These enable low-light-level detection and long integration time, thus
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S9737
SE-171
KMPD1081E01
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Untitled
Abstract: No abstract text available
Text: PREVIOUS DATA IMAGE SENSOR CCD area image sensor S9736 series 512 x 512 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series
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S9736
SE-171
KMPD1080E01
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S9736 series 512 x 512 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific applications. S9736 series also features low noise and low dark current MPP mode operation . These enable low-light-level detection and long integration time, thus
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S9736
SE-171
KMPD1080E01
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MN1405
Abstract: MN1435 MN1499 mn1400 MN1404 MN1402 MN1496 MN1403 N1405 vmos
Text: W ? D D > £ :i~ 9 MN1400*> lì —X MN1400 - X •1 t'* y h • 1 •?L*y7rV 'f ■ ¥ ' D e s c r i p t io n M S 1400 ✓ • > - * « . 4 e r f - l. — ^ / M N H O O S e r i e s 4 - B i t 1 C hip M icrocom puters *>*. • » A L U . R A N . I/O f O 1 .-1 6 A M irro-
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/MNl400
-M400
LaiT-16f
I/O-J40P
mn1499
MN1400
MN1402.
MN1432
MNM05.
MN1405
MN1435
MN1404
MN1402
MN1496
MN1403
N1405
vmos
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IG 2200 19
Abstract: MMR100C H5C1
Text: Sun Type Dot Matrix 18mm <0.7" 5x7 Dot Matrix 37mm 1.4") 5x8 E m ittin g C o lo r Part N um ber Dot Matrix Displays E m ittin g Material W ave Length (nrn) Lum inous Intensity IF=10mA (ucd) Min. Max. Figure No. C olum n | MHR18A 1 MHR18C Red GaP 700 360
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MHR18A
MHR18C
MUR18A
MUR18C
MMR18A
MMR18C
MUG18A
MUG18C
MUY18A
MUY18C
IG 2200 19
MMR100C
H5C1
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1N5327
Abstract: 1N532 n 340 ad LT 83 ZENER 1N5j
Text: 1N6309 thru 1N6355 Microsemi Corp. SA S T A A S A , C A J-'or more information cali 7 ]4 | 9 7 9 -X 2 2 0 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • NIETALLURGICALLY BONDED (ABOVE 6.2 VOLTS
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1N6309
1N6355
MIL-S-19500/533
1N6336
1N6320-1N6336
1M6310
1N63H
1N63T5
1N5327
1N532
n 340 ad
LT 83 ZENER
1N5j
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104MT
Abstract: 104MT160KBS90 54MT 94MT
Text: Bulletin 127504 OS/97 International IO R Rectifier MT.KB SERIES THREE PHASE AC SWITCH Power Modules Features Package -fully com patible w ith the industry standard INT-A-pak pow er m odules series High therm al conductivity package, electrically insulated case
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OS/97
ULE78996
104MT
0083s
54-94-104MT.
I27504
4fl5SM52
104MT160KBS90
54MT
94MT
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TDA 0470
Abstract: 2SK2760-01
Text: FUJI 2SK2760-01 N-channel MOS-FET FAP-IIS Series 60 0V > Features - 1 ,2 ft 9A 60 W > Outline Drawing TO-3 PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55
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2SK2760-01
0GD47Dci
TDA 0470
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IRFS641
Abstract: IRFS640
Text: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES TO-220F • Lower R d s io n •Improved inductive ruggedness • Past switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS640/641
IRFS640
IRFS641
O-220F
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Untitled
Abstract: No abstract text available
Text: ICI •ft* Comlinear Corporation Preliminary Low-gain Op Amp with Disable CLC430 APPLICATIONS: FEATURES typical : • video distribution • multiple line driver • analog bus driver • video signal multiplexing • DAC output buffer •CCD amplifier • 55MHz small signal bandwidth (4Vpp)
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CLC430
55MHz
000V/HS
100ns
CLC430
125mA
sampteat-40Â
at-40â
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N CH FET 600V 9A
Abstract: No abstract text available
Text: This m ate ria l and Ihe Inform ation herein It the p ro p e rty o f Fu|5 Electnc Co .Ltd They shell be neither r e p ro d u c e d , c o p ie d , le n t, or disclosed in any woy w h a ts o e v e r or Ihs use ol a n y third p a riy n o r vised lor ihe m an u fa c tu rin g p u rp o se s w ith o u t
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H04-004-07
0257-R-003a
02S7-R-003a
N CH FET 600V 9A
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IRFS640
Abstract: irfs641
Text: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input ca p acita nce • Extended safe operating area • Improved high tem perature reliability
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IRFS640/641
IRFS640
IRFS641
O-220
-160V
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ITLSI
Abstract: I03y
Text: This material and III« Information herein It the property of Fup Electric Co .lid They shell be neither reproduced. copied, lent, or disclosed in any woy whatsoever or lha use ol any third pany.nor used lor ihe manufacturing purposes w ith o u t the express written consent oi Fuji Electric Co. Ltd.
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2SK2908-01L
0257-R-003a
300VJ.
02S7-R-003E
ITLSI
I03y
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2sk790
Abstract: 2SK79
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII 2SK790 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resistance : • High Forward Transfer Admittance:
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2SK790
100nA
2sk790
2SK79
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tn0201t
Abstract: 38212 3-8212
Text: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications
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TN0201T
TN020esistance
P-38212--Rev.
TN0201T_
tn0201t
38212
3-8212
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Untitled
Abstract: No abstract text available
Text: N T E ELE C T R O nT cT T Ñ T 5SE D ^ 3 1 5 5 ^ 0002075 b24 M N T E fflT S W T T L = TRANSISTOR TRANSISTOR LOGIC 4-Blt Binary Full Adder "/Fast Carry 16-Lead DIP, See Dlag. 249 4-Bit Magnitude Comparator 16-LeadDIP,SeeDiag.249 B3 Data Input Data Input A3
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16-Lead
16-LeadDIP
14-Lead
T-90-01
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APT7530CFN
Abstract: APT8030CFN
Text: A D VA NC E D POWER TECHNOLOGY 4SE □2S7TD1 D ODDOSTb 3DS *A V P ADVANCED OD P o w e r Tec h n o lo g y a APT8030CFN 800V 29.0A 0.30f# APT7530CFN 750V 29.0A 0.30 Q Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEFS MAXIMUM RATINGS
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APT8030CFN
APT7530CFN
APT7530CFN
MIL-STD-750
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