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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 243-339801-000 MICROELECTRONICS InGaAs Avalanche Photodiode 200 um Description Based on an industry proven design and improved for fast overload recovery, this InGaAs APDs has a high QE Quantum Efficiency over the band of 1000 to 1600 nm. The APD’s junction offers more than 1dB optical sensitivity	Original	PDF	25Maximum RF-38 Opto801

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: 243-339801-000 MICROELECTRONICS InGaAs Avalanche Photodiode 200 um Description Based on an industry proven design and improved for fast overload recovery, this InGaAs APDs has a high QE Quantum Efficiency over the band of 1000 to 1600 nm. The APD’s junction offers more than 1dB optical sensitivity

Original

PDF

25Maximum RF-38 Opto801