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    OPTO NPN Search Results

    OPTO NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    OPTO NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCT2201

    Abstract: Opto-isolator
    Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


    Original     		PDF MCT2201 MCT2201 1507C 10sec) 260mW 100x1 Opto-isolator

    ir 035

    Abstract: MCT2201
    Text: Issued March 1997 232-5626 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


    Original     		PDF MCT2201 MCT2201 1507C 10sec) 260mW 100x1 ir 035

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1032 4N48 Solid State Opto-Electronic Medium Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring medium CTR gain at low operating currents and high voltage isolation. ” ” ”


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: LT3573 Isolated Flyback Converter without an Opto-Coupler FEATURES DESCRIPTION 3V to 40V Input Voltage Range 1.25A, 60V Integrated NPN Power Switch Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation n Improved Primary-Side Winding Feedback


    Original     		PDF LT3573 16-Lead directlyT3758 0V/100V LT3957/LT3958 0V/80V 3803/LTC3803-3 200kHz/300kHz OT-23 LTC3803-5

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” ” ” ”


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    OT400

    Abstract: No abstract text available
    Text: OPTO TEC HNO LOGY INC OflE D | bflOE245 DOOOOTB D | -f- OPTO TECHNOLOGY mmmf TYPE OT 400 MINIATURE PHOTOTRANSISTOR DESCRIPTION Opto Technology’s OT 400 Sensors feature an NPN silicon phototran­ sisto r m ounted in a m iniature hermetic package. The lensing effect


    OCR Scan     		PDF bflOE245 OT400-1 OT400-6 OT400-1 OT400-6 OT400

    3 CG 708

    Abstract: motion sensor IR TRANSISTOR BH RW H100 Reflective Sensor reflective opto switch
    Text: m OPTO bô0224S TECHNOLOGY DDQQSn b INC OPTO TECHNOLOGY REFLECTIVE SWITCH T Y P E OTR 6 5 0 Features • TD-18 reflective sensor ■ .0 3 0 aperture ■ Pho totransistor Description Opto Technology's OTR 650 re­ flective sensor combines two GaA1 As LEDs and an NPN silicon


    OCR Scan     		PDF 0224S IL60090 3 CG 708 motion sensor IR TRANSISTOR BH RW H100 Reflective Sensor reflective opto switch

    Untitled

    Abstract: No abstract text available
    Text: ÌMf| ACHTES0 0□ Q7fi4b 0 | TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS.


    OCR Scan     		PDF DT-33-35 2SD1034A

    2SB678

    Abstract: 0939M TOSHIBA 2SB679
    Text: 9097250 TOSHIBA mT| TCmESO ~5h TOSHIBA {DISCRETE/OPTO} aa077bb DISCRETE/OPTO SILICON NPN EPITAXIA L TYPE (PCT PROCESS) _ (DARLINGTON POWER)_ Unit in mm 09.39M A X. LOW FREQUENCY MEDIUM POIJER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.


    OCR Scan     		PDF aa077bb 2SB678 C611ector-Emitter 2SB678 0939M TOSHIBA 2SB679

    opto npn

    Abstract: OT415
    Text: ai L.fl022L|S 0 0 0 0 1 4 5 3 OPTO TECHNOLOGY INC OPTO TECHNOLOGY N P N SILICO N PH O TO D A R LIN G T O N T Y P E OT 4 1 5 Features • High cu rre n t gain ■ TO-46 package ■ Herm etically sealed Description Opto Technology's type OT 415 sensor features an NPN


    OCR Scan     		PDF flD224S 000014S opto npn OT415

    MG50G1BL2

    Abstract: mg50g1b mg50g1bl MG50G1
    Text: lb ^FlìDìvaso DQOflsm i TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO MG50G1BL2 _ 5bC 08214 SILICON NPN TRIPLE D IFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. Unit in mm FEATURES: . The Collector is Isolated from Ground,


    OCR Scan     		PDF MG50G1BL2 082L6 MG50G1BL2 mg50g1b mg50g1bl MG50G1

    amp mta 100

    Abstract: amp mta-100 MTA-100
    Text: •i t,ÖOE24S □DDDBS'i T OPTO TECHNOLOGY ■ OTI INC 42E D 4 0 OPTO TECHNOLOGY 3 - REFLECTIVE SWITCH T Y P E OTR 6 9 6 Features ■ Photodarlington ■ Low profile * Narrow depth of field to eliminate background interference Description Opto Technology's OTR 6 9 6 consists of a


    OCR Scan     		PDF OE24S 00D22tà amp mta 100 amp mta-100 MTA-100

    Untitled

    Abstract: No abstract text available
    Text: sb TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ï>F| ^ a ^ s a 0D 077t,a t T-33-35 56C 07768 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED M ESA TYPE _ DARLINGTON POWER)_ 2SD698 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATION.


    OCR Scan     		PDF T-33-35 2SD698

    Untitled

    Abstract: No abstract text available
    Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG75H6EL1 Ic-75A) Icm75A) MG75H6EL1-1 MG75H6EL1-4 MG150Q2YK1 MG200Q1UK1 MG75Q2YK1 MG50Q2YK1 10Sec.

    opto npn

    Abstract: photo darlington sensor
    Text: •I bflOZBMS D 0 0 0 1 4 1 OPTO TECHNOLOGY b IOTI INC 4¡BE J> q - - U l - OPTO TECHNOLOGY ^ 3 N P N SILICON PHOTODARLINGTON T Y P E OT 411 Features ■ Miniature photodarlington ■ Hermetically sealed package ■ High sensitivity Description Opto Technology's OT 411 sen­


    OCR Scan     		PDF D000141 0T411L 0T411 Ratings141 opto npn photo darlington sensor

    2N6547

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA dFJtoTPESO ~5Í CD ISCRETE/OPTO DQOöObS DT'iä 'iS ' 56c 08065 SILICON NPNTRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE Unit in mm SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER, RELAY AND SOLENOID


    OCR Scan     		PDF Coll03- 2N6547 2N6547

    Toshiba transistor NPN Ic 50A

    Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35&#39; TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF 001L33S Dr-33-35" MG50N2CK1 TJS1251C EGM-HC50N2CK1-4 Toshiba transistor NPN Ic 50A toshiba diode 1A TOSHIBA D MG50N2CK1 50n2

    md 5408

    Abstract: MG300G1UL1 MG300H1UL1 MG300 4.90g transistor ES300
    Text: TOSHIBA - C D I S CRETE/OPTO} TO 9097250 TOSHIBA DISCRETE/OPTO TOSH IBA DE | TQT75S0 001b03fl 3 90D 16038 SEMICONDUCTOR 0 7-53-3^* TOSHIBA GTR MODULE MG300G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF tqt75s0 001l03a MG300G1UL1 09A1A MG300H1UL1-4 md 5408 MG300H1UL1 MG300 4.90g transistor ES300

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} "TD DE| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG25M2CK2 50/ia1 EGA-MG25M2CK2-4

    2SC2650

    Abstract: QD07S go z60
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "Sh DISCRETE/OPTO 2SC2650 DE | t d eJ7SS0 QD07SÖ1 56C 07581 DT'-JJV? SILICON NPN TRIPLE DIFFUSED TYPE 34.3M AX. 5.3MAX 31 JO SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.


    OCR Scan     		PDF QD07SÃ 2SC2650 2SC2650 QD07S go z60

    2SD1360

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb d F | TG17S5D □ □ 0 7 cIE cì 4 DISCRETE/OPTO “ U 7 ' T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF TG17S5D 07cI2cI T-33-29 100X100X 2SD1360

    MG15H6EL1

    Abstract: No abstract text available
    Text: ~TD TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO> ¿^ashtha SEMICONDUCTOR D Ë Ï TOTTESO DD lt.HM 4 90D 16209 D”T-3 'Ò-'ÒS TOSHIBA GTR MODULE MG15H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG15H6EL1 EGA-MG15H6EL1-1 MG15H6EL1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA' {DISCRETE/OPTO} 9097250 TOSHIBA ¿ f o iiu h a TO DISCRETE/OPTO DE I TCHTSSO ODlbBET 3 90D SEMICONDUCTOR 16329 DT-33-3^ TOSHIBA CTR MODULE 'MG50M2CK2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF DT-33-3^ MG50M2CK2 Dr-33-3S

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG300Q1UK1