TS3332LD
Abstract: U1001 XP1005-BD XU1001-BD 330400
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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U1001-BD
19-Apr-07
MIL-STD-883
U1001
XU1001-BD-000V
XU1001-BD-000W
XU1001-BD-EV1
XU1001
TS3332LD
U1001
XP1005-BD
XU1001-BD
330400
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330400
Abstract: No abstract text available
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD April 2007 - Rev 19-Apr-07 Features Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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19-Apr-07
MIL-STD-883
XU1001-BD-000V
XU1001-BD-000W
XU1001-BD-EV1
XU1001
330400
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TS3332LD
Abstract: U1001 XP1005-BD XU1001-BD
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Commercial-Level Visual Inspection Using
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U1001-BD
16-Oct-08
Mil-Std-883
XU1001-BD-000V
XU1001-BD-000W
XU1001-BD-EV1
XU1001
TS3332LD
U1001
XP1005-BD
XU1001-BD
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U1001
Abstract: 84-1LMI XP1005 XU1001 circuit diagram of 4 channel 315 rf transmitter
Text: 33.0-40.0 GHz GaAs MMIC Transmitter U1001 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-Harmonic Transmitter Low DC Power Consumption Optional Power Bias 8.0 dB Conversion Gain 30 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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U1001
13-May-05
MIL-STD-883
U1001
84-1LMI
XP1005
XU1001
circuit diagram of 4 channel 315 rf transmitter
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U1000
Abstract: XB1004 XU1000
Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing
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U1000
13-May-05
MIL-STD-883
U1000
XB1004
XU1000
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XB1004-BD
Abstract: No abstract text available
Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000-BD May 2007 - Rev 02-May-07 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing
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U1000-BD
02-May-07
MIL-STD-883
XU1000-BD-000V
XU1000-BD-000W
XU1000-BD-EV1
XU1000
XB1004-BD
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138l6
Abstract: CMY82 amplifier SMD MARKING CODE 211
Text: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages
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P-VQFN-24-3
GVQ09253
138l6
CMY82
amplifier SMD MARKING CODE 211
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CMY82
Abstract: GVQ09253 mmic amplifier marking code lo2 SMD MARKING CODE L6
Text: GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. – 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages
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P-VQFN-24-3
GVQ09253
CMY82
GVQ09253
mmic amplifier marking code lo2
SMD MARKING CODE L6
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Untitled
Abstract: No abstract text available
Text: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with
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MAX2090
50MHz
1000MHz
38dBm,
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MAX2090
Abstract: MAX2090ETP JESD51-7 s4db
Text: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with
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MAX2090
50MHz
1000MHz
MAX2090
1000MHz
38dBm,
MAX2090ETP
JESD51-7
s4db
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Untitled
Abstract: No abstract text available
Text: 19-6034; Rev 0; 9/11 MAX2090 50MHz to 1000MHz Analog VGA and Power Detector with Optional AGC Loop General Description Benefits and Features The MAX2090 high-linearity analog variable-gain amplifier VGA is a monolithic SiGe BiCMOS attenuator, amplifier, and RMS detector designed to interface with
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MAX2090
50MHz
1000MHz
MAX2090
1000MHz
38dBm,
700-MAX2090ETP+
MAX2090ETP+
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Untitled
Abstract: No abstract text available
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)
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CXG1115AER
CXG1115AER
VQFN-24P-04
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Untitled
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
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gps l10
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
gps l10
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24PIN
Abstract: CXG1115ER
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
VQFN-24P-03
24PIN
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gps l10
Abstract: No abstract text available
Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using
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CXG1115AER
CXG1115AER
VQFN-24P-04
gps l10
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Untitled
Abstract: No abstract text available
Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1115ER
CXG1115ER
24PIN
VQFN-24P-03
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24PIN
Abstract: CXG1118ER GC118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
24PIN
GC118
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3618A
Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features
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CXG1118ER
CXG1118ER
VQFN-24P-03
3618A
24PIN
SONY CHOKE
cxg1118
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Die Attach and Bonding Guidelines
Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram agilent HMMC
Text: Agilent HMMC-5033 17.7-32 GHz Power Amplifier Data Sheet Features 2.74 x 1.31 mm 108 × 51.6 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5033 is a MMIC power amplifier designed for use in
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HMMC-5033
HMMC-5033
HMMC-5040
HMMC-5618
HMMC-5618
HMMC-5033/rev
Die Attach and Bonding Guidelines
GaAs MMIC ESD, Die Attach and Bonding Guidelines
long range gold detector circuit diagram
agilent HMMC
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Untitled
Abstract: No abstract text available
Text: 37– 43 GHz Amplifier Technical Data HMMC-5034 Features • 23 dBm Output P -1dB • 8 dB Gain @ 40 GHz • Integrated Output Power Detector Network • 50 Ω Input/Output Matching • Bias: 4.5 Volts, 300 mA Description The HMMC-5034 is a MMIC power amplifier designed for use in
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HMMC-5034
HMMC-5034
HMMC-5040
5968-4224E
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GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: TC926 HMMC-5034 HMMC-5040 Die Attach and Bonding Guidelines
Text: Agilent HMMC-5034 37-43 GHz Amplifier Data Sheet Features TC926 1.56 x 1.02 mm 61.4 × 40.1 mils ±10 µm (± 0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5034 is a MMIC power amplifier designed for use in
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HMMC-5034
TC926
HMMC-5034
HMMC-5040
HMMC-5034/rev
GaAs MMIC ESD, Die Attach and Bonding Guidelines
TC926
HMMC-5040
Die Attach and Bonding Guidelines
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HMMC-5034
Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Text: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it
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HMMC-5034
TC926
HMMC-5034
HMMC-5040
5988-3203EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
agilent HMMC
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Untitled
Abstract: No abstract text available
Text: In fineon fach oologia* GaAs MMIC CMY 82 Preliminary Data Sheet • GaAs receiver front-end for cellular CDMA applications • Adjustable gain control RF amplifier with 20 dB dynamic range • Low LO-power demand of typ. - 10 dBm with 2 LO buffer stages • Optional 1 or 2 LO-buffer stages
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OCR Scan
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PDF
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P-VQFN-24-3
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