Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC226 July 1996 GaAIAs Infrared Emitter Chip Type OPC226 . 012 ( . 3 0 ,010(,25) .007(.18] .005 (. 1 3 ) . 0 0 8 {. 2 0 } NOW. DIMENSIONS ARE IN INCHES(HILLIHETERS) P-SIDE WITH METAL ALLOY CONTACT ENTIRE SURFACE Features Absolute Maximum R a tin g s^ ( T a = 2 5 ° C u n le s s o th e r w is e n o te d )
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OPC226
OPC226VP
OPC226TP
OPC226WP
OPC225
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Untitled
Abstract: No abstract text available
Text: ¡ 0 OPTEK Product Bulletin OPC226 June 1993 GaAIAs Infrared Emitter Chip Type OPC226 JU .3Ü -. 0 0 8 (. 2 0 ) . 0l0(.25] KOH. Features Absolute Maximum Ratings (1)(Ta = 25°C unless otherwise noted) • High infrared radiation output • Low degradation
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OPC226
200mW
OPC226TP
OPC226WP
OPC225
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OPC225
Abstract: OPC226
Text: 0 OPTEK Product Bulletin OPC226 July 1996 GaAIAs Infrared Emitter Chip Type OPC226 . 012 ( . 3 0 ,010(,25) .007(.18] .005 (. 1 3 ) . 0 0 8 {. 2 0 } NOW. DIMENSIONS ARE IN INCHES(HILLIHETERS) P-SIDE WITH METAL ALLOY CONTACT ENTIRE SURFACE Features Absolute Maximum R a tin g s^ ( T a = 2 5 ° C u n le s s o th e r w is e n o te d )
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OPC226
OPC226
OPC226age
100mA
to-46
000B731
OPC225
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Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC226 June 1993 GaAIAs Infrared Emitter Chip Type OPC226 .01Z(.30 .OOB(.ZO) «OK. . 01 01 .2 5) : — N-SIDE I I . 0 1 2 .30) . 0 1 0 .25) I I • I ■ ■ ■ AMPHOTERIC | JUNCTION — I- / . 0 0 7 ( .1 8) . 00 51 .1 3) DIMENSIONS ARE
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OPC226
OPC226
10jiA
100mA
100mA<
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Untitled
Abstract: No abstract text available
Text: I0 O P T E K Product Bulletin OPC226 July 1996 GaAIAs Infrared Emitter Chip Type OPC226 Features Absolute Maximum Ratings*1* T a = 25° C unless otherwise noted • High infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55° C to +150° C
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OPC226
OPC226
OPC226VP
OPC226TP
OPC226W
OPC225
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