OPC216
Abstract: No abstract text available
Text: 0OPTEK P roduct B ulletin OPC216 Ju ly 1996 GaAIAs Infrared Emitter Chip Type OPC216 .0171.43 . 01S(. i 8) DIMENSIONS HE IK IICHES(HILLIHETERS) P-S10E B im HETAL ALLOY CONTACT ENTIBE SURFACE Features A b so lu te M aximum Ratings*1' (Ta = 25° C unless otherwise noted)
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OPC216
OPC216
OPC216VP
OPC216TP
0QD273Q
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Untitled
Abstract: No abstract text available
Text: 0 OPTEK Product Bulletin OPC216 July 1996 G a A IA s Infrared Emitter Chip Type OPC216 Features Absolute Maximum R a tin gs^ (Ta = 25° C unless otherwise noted • High infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55° C to +150° C
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OPC216
OPC216
OPC216VP
OPC216TP
OPC216WP
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Untitled
Abstract: No abstract text available
Text: @ OPTEK Product Bulletin OPC216 June 1993 GaAIAs Infrared Emitter Chip Type OPC216 Features Absolute Maximum Ratings *1*(Ta = 25°C unless otherwise noted • High infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55°C to +150°C
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OPC216
150mA
200mW
100mA
100mA
OPC216TP
OPC216WP
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Untitled
Abstract: No abstract text available
Text: @ .O PIEK Product Bulletin OPC216 July 1996 G aAIAs Infrared Emitter Chip Type OPC216 .0171.43 . 01S . i 8) DIMENSIONS H E IK IICHES(HILLIHETERS) P-S10E B i m HETAL ALLOY CONTACT ENTIBE SURFACE Features Absolute Maximum Ratings*1' (T a = 25° C u nless otherw ise noted)
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OPC216
P-S10E
PC216VP
PC216TP
OPC216W
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OPC216
Abstract: No abstract text available
Text: g OPTEK Product Bulletin OPC216 June 1993 GaAIAs Infrared Emitter Chip Type OPC216 Features Absolute Maximum Ratings *1*(Ta = 25°C unless otherwise noted) • High Infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55°C to +150°C
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OCR Scan
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PDF
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OPC216
OPC216
150mA
200mW
100mA
OPC216TP
OPC216WP
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OPC216
Abstract: No abstract text available
Text: @ OPTEK Product Bulletin OPC216 June 1993 G aA IA s Infrared Emitter Chip Type OPC216 Features Absolute Maximum Ratings *1^ Ta = 2 5 ° C u n le ss otherwise noted • High infrared radiation output • Low degradation • Microalloyed gold contacts Storage and Operating Temperature. -55°C to +150°C
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OCR Scan
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OPC216
OPC216
OPC216TP
OPC216WP
100mA
100mAÂ
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smd 27E
Abstract: tlc271 smd S7E SMD TRANSISTOR Diamond SA calibration of phototransistor Optek Technology OPC216 OPC600L OPC8320 TLC271
Text: OPTEK TECHNOLOGY INC S7E HYBRIDS A SSE M B LIE S CAPABILITIES D • fc,7^fiSflO 00007=12 b ■ -p a z -S I 0 OPTEK If size is a prime concern in the selection of an optoelectronic assembly look to the Optek hybrid line. The use of a hybrid assembly can save the design engineer from 30 to 8 0 % in
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OPC8320
smd 27E
tlc271 smd
S7E SMD TRANSISTOR
Diamond SA
calibration of phototransistor
Optek Technology
OPC216
OPC600L
TLC271
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KT853
Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
Text: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE
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6N140ATXV
3N243
3N244
3N245
CNY17/T
CNY17/2
CNY17/3
CNY17/4
3N243TX
3N244TX
KT853
OPB915S10
OH90U
OPI1265
K9000
OP269SLB
OP269SLC
sla 9030
K8102
opi3250
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KT853
Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
Text: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4
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3N243
3N244
3N245
3N243TX
3N243R
3N244TX
3N244R
3N245TX
3N245R
KT853
KT853A
OH90U
KT826
K8702
KT850B
KT8150
KT851A
KR8803
kt853a2
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