Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OPC200 June 1993 NPN Silicon Phototransistor Chip Type OPC200 . 027 . 69 . 0 1Z ( .305) . 0 0 8 ( . 2 03 } GOLD AL. 003 5 OXIDE .0201.51) “ SO0AR E H0HT COLLECTOR CONTACT DIMENSIONS ARE IN IHCHES(NILLIHETERS) Features Absolute Maximum Ratings (1)(T a = 2 5 ° C u nless otherw ise noted)
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OPC200
OPC200
935nm,
100mA.
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OPC200TP
Abstract: Photosensor OPC200
Text: OPTEK Product Bulletin OPC200 July 1996 NPN Silicon Phototransistor Chip Type OPC200 Features Operating Tem perature. -40° C t o +85° C Storage Temperature. -65° C to +150° C
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OPC200
OPC200
OPC200TP
Photosensor
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Untitled
Abstract: No abstract text available
Text: g OPTEK Product Bulletin OPC200 July 1996 NPN Silicon Phototransistor Chip Type OPC2QO . 027(. 69) . OZS{.64} I . 0 1 2 { . 305 ) •008( . 203) (OLD J AL. !_ ,.0035 OXIDE . 020 (. 51) COLLECTOR CONTACT DIM E N S I O N S ARE IN I N C H E S ( H I L L I H E T E R S )
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OPC200
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OPC125
Abstract: OPC200
Text: OPTEK TECHNOLOGY INC 4flE D • bTTflSflQ 0001311 bS3 ■ OTK -T-Si-fel Optek Standard Phototransistors 0 P C500 L i. .0 2 0 0 .5 1 0PC600 L I -BASE CONTACT A z z .0 2 5 (0 .6 4 ) I , -BASE CONTACT ■f / OPC200 L .0 1 5 (0 .3 8 ) T — EMITTER CONTACT
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OPC600L
100nA
OPC200
100mA
930nm
0PC225
OPC125
OPC200
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Untitled
Abstract: No abstract text available
Text: 0 O P IE K Product Bulletin OPC200 Ju ly 1996 NPN Silicon Phototransistor Chip Type OPC200 Features Absolute Maximum Ratings*1' T a = 25° C u n le ss otherw ise noted • Active area centered on chip • Low Cost • Silicon nitride passivation Operating Tem perature. -40° C to +85° C
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OPC200
PC200VP
PC200TP
OPC200W
PC200SP
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photosensor phototransistor
Abstract: Photosensor OPC200 OPC260
Text: OPTEK Product Bulletin OPC260 July 1996 NPN Silicon Phototransistor Chip Type OPC260 Features Optek Technology photosensor chips are fabricated using the latest silicon planar diffused technology and are silicon nitride passivated for long term stability. All photosensors have an
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OPC260
OPC26Q
OPC200
OPC26OVP
OPC260TP
OPC260WP
OPC26OSPues.
photosensor phototransistor
Photosensor
OPC200
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OPC26Ü J uly 1996 NPN Silicon Phototransistor Chip Type OPC260 .040 1.016 SQUARE NOM. .012 (. 3 0 5 ) .008 .203 EMITTER CONTACT V GOLD r hoim A C T I V E ¡I - A R E A ÌÌ AL. BASE CONTACT .0 0 3 5 D1A OXIDE COLLECTOR CONTACT Features
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OPC26Ã
OPC260
OPC200
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Untitled
Abstract: No abstract text available
Text: @ . optek Product Bulletin OPC260 June 1993 NPN Silicon Phototransistor Chip Type OPC260 .040 1. 016 SQUARE NQH . . 0 12 (. 3 0 5 ) . 0 08 (. 2 0 3 ) ~^jyüö*/E<MrI T T E R GOLD rl CONTACT ACTIVE - AREA AL. BASE CONTACT ,0035 DIA. D I M E N S I O N S ARE
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OPC260
OPC260
OPC200
935nm,
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