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    OPB0505P

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180±20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics


    Original     		PDF OPB0505P 120um 100uA OPB0505P

    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180 20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics


    Original     		PDF OPB0505P 120um 100uA