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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9451 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage


    Original
    OPA9451 100mA 135um --------------------11mil PDF

    OPA9451

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9451 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage


    Original
    OPA9451 100mA 135um 11mil OPA9451 PDF